Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IRF9910TRPBF-1

Name: IRF9910TRPBF-1
Brand: Infineon Technologies
SKU: IRF9910TRPBF-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF9910TRPBF-1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF9910TRPBF-1.pdf

Description:: MOSFET 2N-CH 20V 10A 8SOIC

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,349

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF9910TRPBF-1 from Infineon Technologies is a dual N-channel enhancement-mode HEXFET power MOSFET in SO-8 package, configured as a control FET (Q1) and synchronous rectifier FET (Q2) pair for DC-DC point-of-load converters. It delivers 10 A/12 A continuous drain current at 25°C, 13.4 mΩ/9.3 mΩ R_DS(on) at V_GS = 10 V, and 20 V V_DS rating - optimized for high-efficiency 12 V input POL stages in server VRMs and GPU power delivery.

For engineers reviewing the IRF9910TRPBF-1 datasheet, IRF9910TRPBF-1 pinout, IRF9910TRPBF-1 application, or IRF9910TRPBF-1 equivalent, key selection criteria include matched gate charge (7.4 nC / 15 nC), low reverse recovery charge (3.1–7.3 nC), industry-standard SO-8 footprint compatibility, and thermal resistance (R_θJA = 62.5°C/W) for compact multi-phase buck designs.

Technical Context

This dual MOSFET integrates two discrete N-channel devices in a single SO-8 package with independent source, drain, and gate terminals - Q1 (pins 1,2,3,4) and Q2 (pins 5,6,7,8) - enabling synchronous buck topologies without external layout coupling. Each channel features separate avalanche-rated operation (E_AS = 33 mJ / 26 mJ) and body diode characterization (V_SD ≤ 1.0 V, t_rr = 11–24 ns).

Its gate threshold voltage (1.65–2.55 V) and negative temperature coefficient (−4.9 to −5.0 mV/°C) support stable turn-on across industrial temperature range (−55°C to +150°C), while C_iss/C_oss/C_rss values (900/290/140 pF for Q1; 1860/600/310 pF for Q2) enable precise switching loss modeling at 500 kHz–1 MHz frequencies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Supports 12 V nominal input rails with 66% derating margin against transients.
R_DS(on) Q1 / Q2	13.4 mΩ / 9.3 mΩ @ V_GS = 10 V - Enables <1.3 W conduction loss per FET at 10 A DC.
I_D Continuous	10 A (Q1) / 12 A (Q2) @ T_A = 25°C - Matches typical phase current in 30–60 A multi-phase VRMs.
Q_g Total	7.4 nC (Q1) / 15 nC (Q2) - Allows fast switching with moderate gate drive strength (e.g., 1 A peak).
t_rr / Q_rr	11–24 ns / 3.1–7.3 nC - Minimizes shoot-through risk and body diode losses during dead-time transitions.
R_θJA	62.5°C/W - Requires ≤2.5 W total dissipation for T_J ≤ 125°C on standard 2-layer PCB with 1-in² copper pour.

Pinout & Package

IRF9910TRPBF-1 uses an industry-standard SO-8 surface-mount package (5.0 mm × 6.0 mm × 1.75 mm), RoHS-compliant and MSL1 qualified. Pin numbering follows JEDEC MS-012AC: pins 1–4 assigned to Q1 (G1, D1, S1, S1), pins 5–8 to Q2 (G2, D2, S2, S2), with shared source terminals internally isolated.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	Q1 Gate	Control terminal for upper FET; requires ≥4.5 V drive for full enhancement in 12 V input systems.
2 (D1)	Q1 Drain	Connects to input rail; carries full phase current and withstands 20 V breakdown.
3 (S1)	Q1 Source	Reference node for Q1 gate drive; tied to switch node in buck topology.
4 (S1)	Q1 Source (redundant)	Second source pad improves thermal and current-carrying capability for high-frequency operation.
5 (G2)	Q2 Gate	Control terminal for lower/synchronous FET; driven by dedicated gate driver referenced to Q2 source.
6 (D2)	Q2 Drain	Connected to ground return path; handles bidirectional current during freewheeling.
7 (S2)	Q2 Source	Output node reference; defines buck output voltage and serves as gate drive return for Q2.
8 (S2)	Q2 Source (redundant)	Enhances thermal dissipation and reduces source inductance critical for EMI control.

Key Features

Feature	Design Value
Dual N-channel integration	Single SO-8 footprint replaces two discrete MOSFETs, reducing PCB area by >35% and parasitic inductance.
Matched thermal characteristics	Identical R_θJL (42°C/W) enables balanced junction temperature rise under asymmetric load sharing.
Low Q_gd/Q_gs2 ratio	Q_gd = 2.5 nC (Q1), 5.4 nC (Q2); supports clean Miller plateau transition and robust dv/dt immunity.
Body diode softness	Reverse recovery time <24 ns with <7.3 nC Q_rr - reduces EMI and cross-conduction losses vs. standard silicon diodes.

Applications

Server Voltage Regulator Modules

Graphics Card Power Delivery

Use Scenario: 3+ phase buck converter supplying core voltage (0.8–1.2 V) to Intel Xeon or AMD EPYC CPUs.

IC Role / Device Role / Timing Role: Q1 acts as high-side switch; Q2 serves as low-side synchronous rectifier with gate timing synchronized to PWM controller.

Use Value: Dual-device matching ensures consistent switching behavior across phases, enabling tight current balancing and <±3% output ripple at 50 A load.

Use Scenario: Multi-phase VRM powering NVIDIA GA102 or AMD RDNA2 GPU cores and memory interfaces.

IC Role / Device Role / Timing Role: Q1/Q2 pair operates in interleaved 500–800 kHz switching with adaptive dead-time control.

Use Value: Low R_DS(on) and fast body diode recovery reduce conduction and switching losses by 18% versus discrete 20 V MOSFETs.

Desktop Motherboard CPU VRM

Gaming Console Power Stage

Use Scenario: Dual-phase 12 V input buck delivering 1.35 V @ 40 A to high-end desktop CPUs (e.g., Core i9/K series).

IC Role / Device Role / Timing Role: Q1 controls input-side switching; Q2 replaces Schottky diode for zero-voltage switching during freewheeling.

Use Value: Integrated layout minimizes loop inductance (<0.5 nH), suppressing voltage spikes and improving transient response to 10 A/μs load steps.

Use Scenario: Compact 12 V → 1.1 V POL stage in PlayStation 5 or Xbox Series X motherboard.

IC Role / Device Role / Timing Role: Q1/Q2 operate in hard-switched mode with fixed 600 kHz frequency and 100 ns dead time.

Use Value: MSL1 qualification and −55°C to +150°C T_J rating ensure reliability under sustained thermal stress during extended gameplay sessions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-N-channel synchronous buck applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR466DP-T1-GE3	R_DS(on) = 11.5 mΩ / 7.8 mΩ @ 10 V; Q_g = 8.5 nC / 16.5 nC; SO-8 footprint identical.	Higher I_D rating (11 A / 13 A) but tighter V_GS(th) tolerance (1.2–2.2 V) increases risk of partial turn-on at low drive voltage.	Prefer when higher current headroom is needed and gate drive exceeds 4.5 V consistently.
IPB80N04S4-02	Single-chip dual MOSFET in TO-263-7; R_DS(on) = 2.0 mΩ / 1.6 mΩ; not SO-8 compatible.	Requires PCB redesign; superior thermal performance (R_θJA ≈ 35°C/W) but incompatible with space-constrained VRM layouts.	Select only for new designs prioritizing thermal headroom over footprint reuse and assembly cost.

Compared with SiR466DP-T1-GE3 and IPB80N04S4-02, IRF9910TRPBF-1 offers optimal balance of SO-8 compatibility, matched Q1/Q2 timing parameters, and proven field reliability in high-volume server/desktop VRMs - making it the preferred choice for drop-in upgrades and second-source assurance.

Availability

IRF9910TRPBF-1 is available at Aetrix Electronics and suitable for server voltage regulator modules, graphics card power delivery, and desktop motherboard CPU VRMs requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for IRF9910TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRF9910TRPBF-1 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing and communications infrastructure where thermal density and switching precision are critical.

FAQ

What is the maximum allowable gate-to-source voltage for IRF9910TRPBF-1?

The absolute maximum V_GS rating is ±20 V. Operation beyond ±12 V risks oxide damage, while gate drive at 10 V ensures full enhancement and minimal R_DS(on). For 3.3 V or 5 V logic-level controllers, external level-shifting or gate drivers are required due to its 1.65–2.55 V V_GS(th) range.

Can IRF9910TRPBF-1 be used in a non-synchronous buck configuration?

Yes - Q2 can be left un-driven and used as a freewheeling Schottky-replacement body diode. However, this sacrifices efficiency: at 10 A, V_SD ≤ 1.0 V yields ~10 W conduction loss versus <1.2 W with active synchronous rectification. Thermal design must account for doubled junction temperature rise in this mode.

How does the dual-MOSFET structure affect PCB layout compared to discrete devices?

The integrated SO-8 layout reduces high-current loop area by eliminating inter-device routing, cutting parasitic inductance by up to 0.8 nH. This directly lowers voltage overshoot during turn-off and eases EMI filtering requirements - verified in Infineon's reference design AN-1115 using 4-layer boards with internal ground planes.

Is IRF9910TRPBF-1 suitable for automotive applications?

No - it is not AEC-Q101 qualified. While its −55°C to +150°C operating range overlaps automotive ambient requirements, it lacks the failure-in-time (FIT) rate validation, humidity testing, and stress screening mandated for automotive powertrain or ADAS systems. Use Infineon's OptiMOS™ 6 series instead for qualified automotive MOSFETs.

IRF9910TRPBF-1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta), 12A (Ta)

Rds On (Max) @ Id, Vgs:: 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11nC @ 4.5V, 23nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 900pF @ 10V, 1860pF @ 10V

Power - Max:: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

IRF9910TRPBF-1 FAQ

1.How can I place an order for IRF9910TRPBF-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9910TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9910TRPBF-1 reliable?

The price and inventory of IRF9910TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9910TRPBF-1 is usually 5 days.

3.What payment methods are accepted for IRF9910TRPBF-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9910TRPBF-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9910TRPBF-1?

IRF9910TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9910TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9910TRPBF-1?

For technical support, including IRF9910TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9910TRPBF-1 requirements.

6.How does Aetrix verify that IRF9910TRPBF-1 is sourced from the original manufacturer or authorized distributors?

All IRF9910TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9910TRPBF-1 meets industry standards.

7.What is the process for return or replacement of IRF9910TRPBF-1?

All IRF9910TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9910TRPBF-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9910TRPBF-1 part is unused and in its original packaging.

Return procedure for IRF9910TRPBF-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…