Infineon Technologies IRF9952

Overview

IRF9952 from Infineon Technologies is a dual-channel complementary MOSFET pair-N-channel and P-channel-in a single SO-8 package, rated for ±60 V V_DS, 3.5 A continuous drain current (N-ch), –2.3 A (P-ch), and R_DS(on) of 0.14 Ω (N) / 0.27 Ω (P) at V_GS = ±10 V. It enables compact half-bridge and H-bridge motor control in DC-DC converters and power inverters.

For engineers reviewing the IRF9952 datasheet, IRF9952 pinout, IRF9952 application, or IRF9952 equivalent, key selection criteria include verified gate threshold symmetry (±3.0 V), low gate charge (Q_G = 12 nC N-ch / 10 nC P-ch), avalanche energy rating (E_AS = 150 mJ N-ch / 90 mJ P-ch), and SO-8 thermal performance under pulsed 150°C junction conditions.

Technical Context

The IRF9952 integrates matched N- and P-channel enhancement-mode MOSFETs on a common die substrate, sharing thermal coupling and enabling synchronous switching with tightly controlled V_GS(th) tracking (±0.5 V mismatch). Its gate drive compatibility supports standard 5 V and 10 V logic-level control without level shifting.

Designed for bidirectional power flow, it delivers symmetrical conduction losses (R_DS(on) ratio ≤ 1.93×) and matched dynamic parameters-including C_iss (N: 520 pF / P: 430 pF) and Q_gd (N: 4.5 nC / P: 3.8 nC)-to minimize shoot-through risk in bridge topologies.

Key Specifications

Pinout & Package

IRF9952 uses an industry-standard SO-8 surface-mount package with exposed thermal pad (pin 8 connected to N-channel source), optimized for PCB heat dissipation in high-duty-cycle applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET pair applications.

Compared with Si7851DP and DMC2038LSD, IRF9952 uniquely combines 60 V rating, avalanche ruggedness, and SO-8 thermal pad-making it the only option qualified for unclamped inductive switching in 48 V industrial motion control.

Availability

IRF9952 is available at Aetrix Electronics and suitable for brushless DC motor control, 48 V DC-DC conversion, and industrial H-bridge actuator drivers requiring stable component supply across multi-year production cycles.

Supply support for IRF9952 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with over 30 years of MOSFET innovation.

The StrongIRFET™ family-including IRF9952-is engineered for high-reliability power conversion in harsh environments, emphasizing avalanche robustness, thermal stability, and gate drive simplicity in half-bridge and synchronous rectifier roles.

FAQ

Can IRF9952 be used in a high-side N-channel configuration with bootstrap gate drive?

Yes. The N-channel device supports standard bootstrap operation up to 60 V high-side bias. Its 3.0 V minimum V_GS(th) and 12 nC Q_G allow reliable turn-on with typical 12 V gate drive and 100 ns propagation delay. Bootstrap capacitor sizing must account for Q_G × f_SW and leakage, especially above 200 kHz.

What is the maximum allowable PCB copper area for the thermal pad under 3.5 A continuous N-channel operation?

For 3.5 A continuous current at T_A = 70°C, a minimum 200 mm² (20 mm × 10 mm) 2-oz copper pour connected to the thermal pad via ≥6 thermal vias (0.3 mm diameter) is required to maintain T_J ≤ 125°C. Smaller areas increase R_θJA beyond 62°C/W, risking thermal runaway.

Does IRF9952 support 3.3 V logic-level gate drive for both channels?

No. While the N-channel can partially enhance at 3.3 V (I_D ≈ 0.2 A at V_GS = 3.3 V), the P-channel requires ≥4.5 V |V_GS| for usable R_DS(on). For full 3.5 A/–2.3 A operation, 5 V or higher gate drive is mandatory for both channels per datasheet Fig. 4 and Fig. 12.

How is the SO-8 thermal pad electrically isolated from internal circuitry?

The thermal pad (pin 8) is internally bonded to the N-channel source (S1, pin 2) and is not isolated. It must be routed to the same net as S1 on the PCB. Connecting it to ground or another potential will cause short-circuit failure. No dielectric layer exists between pad and S1; isolation relies solely on PCB layout.