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Infineon Technologies IRF9952PBF

Part No.:
IRF9952PBF
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixIRF9952PBF.pdf
Description:
MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,857

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Product details

Overview

IRF9952PBF from Infineon Technologies is a dual-channel complementary MOSFET pair featuring one N-channel and one P-channel enhancement-mode device in a single SO-8 package. It delivers RDS(on) of 0.042 Ω (N-ch, VGS = 10 V, ID = 3.5 A) and 0.075 Ω (P-ch, VGS = −10 V, ID = −2.3 A), with ±20 V gate-source voltage rating and −60 V/60 V drain-source breakdown voltage. It is used in half-bridge motor control stages for 12 V DC brushed motors.

For engineers reviewing the IRF9952PBF datasheet, IRF9952PBF pinout, IRF9952PBF application, or IRF9952PBF equivalent, this part supports synchronous rectification, bidirectional load switching, and compact H-bridge driver designs where matched N/P channel characteristics and thermal coupling are critical.

Technical Context

The IRF9952PBF integrates thermally coupled N- and P-channel MOSFETs sharing a common source configuration per channel (D1/G1/S1 and D2/G2/S2), enabling complementary drive without external level-shifting. Its gate threshold voltages are VGS(th) = 1–2.5 V (N-ch) and −1–−2.5 V (P-ch), supporting 3.3 V and 5 V logic-level drive.

It exhibits normalized RDS(on) variation ≤2.0× over −60 °C to +150 °C junction temperature, and single-pulse avalanche energy ratings of 12 mJ (N-ch) and 10 mJ (P-ch) at TJ = 25 °C, confirming ruggedness in inductive switching applications.

Key Specifications

Parameter Value and Actual Design Meaning
VDS (N-ch) 60 V - supports 48 V nominal bus systems with 20 % margin
VDS (P-ch) −60 V - enables symmetric rail-to-rail switching in dual-supply topologies
RDS(on) (N-ch) 0.042 Ω @ VGS = 10 V, ID = 3.5 A - limits conduction loss to ≤0.52 W at 3.5 A
RDS(on) (P-ch) 0.075 Ω @ VGS = −10 V, ID = −2.3 A - yields ≤0.40 W conduction loss at rated current
Qg (N-ch) 12 nC @ VGS = 10 V - determines gate drive power and switching speed in PWM at ≤100 kHz
Qg (P-ch) 10 nC @ VGS = −10 V - ensures matched turn-on timing with N-channel for reduced shoot-through risk
TJ max 150 °C - allows operation in sealed enclosures with 40 K ambient rise under full load

Pinout & Package

IRF9952PBF is housed in a standard SO-8 surface-mount package (5.0 mm × 6.0 mm, 1.27 mm pitch), with exposed drain pads for both channels thermally connected to the PCB ground plane.

Pin/Terminal Circuit Role Design Meaning
1 (G1) N-channel gate Logic-level input; requires ≥3.5 V to fully enhance N-MOSFET
2 (S1) N-channel source Common source node for N-ch; tied to low-side reference or current sense point
3 (D1) N-channel drain High-side switch output; connects to load supply rail
4 (D2) P-channel drain Low-side switch output; connects to load return path
5 (S2) P-channel source Common source node for P-ch; tied to high-side reference or supply rail
6 (G2) P-channel gate Inverted logic input; driven low to turn on P-MOSFET
7, 8 (D1/D2 tab) Drain thermal pads Internally connected to pins 3 and 4; must be soldered to PCB copper for thermal dissipation

Key Features

Feature Design Value
Complementary dual MOSFET Matched VGS(th) and RDS(on) tracking across temperature improves H-bridge symmetry
Logic-level gate drive Turns on fully at 4.5 V (N-ch) and −4.5 V (P-ch), compatible with microcontroller GPIO
Enhanced avalanche ruggedness 12 mJ (N-ch) and 10 mJ (P-ch) single-pulse rating enables reliable inductive load commutation
Thermally coupled die Shared substrate minimizes ΔT between channels, reducing mismatch in current sharing
SO-8 footprint Drop-in replacement for discrete N+P pairs; reduces PCB area by >40 % vs. two SO-8 devices

Applications

Brushed DC Motor Control USB-C Power Delivery Switching

Use Scenario: Bidirectional 12 V brushed motor drive in portable power tools with stall detection.

IC Role / Device Role / Timing Role: Dual-channel half-bridge power stage; N-ch switches high side, P-ch switches low side with synchronized gate timing.

Use Value: Matched RDS(on) and thermal coupling reduce current imbalance during direction reversal and improve thermal shutdown margin.

Use Scenario: Load switching and reverse-current blocking in USB-C PD sink applications with 5–20 V input range.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET pair providing bidirectional current flow and reverse polarity protection.

Use Value: Integrated complementary pair eliminates need for external level shifters and reduces BOM count by two discrete FETs.

Industrial PLC Output Module Automotive Body Control Unit

Use Scenario: Solid-state relay replacement for 24 V DC solenoid and valve actuation with diagnostic feedback.

IC Role / Device Role / Timing Role: Low-side (N-ch) and high-side (P-ch) switched outputs controlled via isolated digital signals.

Use Value: −60 V/60 V VDS rating withstands 24 V system transients (ISO 7637-2 Pulse 1/2a); SO-8 package supports conformal coating.

Use Scenario: Window lift and seat position control with integrated current limiting and thermal foldback.

IC Role / Device Role / Timing Role: Half-bridge driver with internal current-sense node at shared source terminals.

Use Value: On-resistance tolerance and thermal tracking enable accurate current estimation without external shunt resistors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si7951DP-T1-GE3 RDS(on) = 0.035 Ω (N), 0.055 Ω (P); lower Qg but 40 V VDS rating Not suitable for 48 V bus or ISO 7637-2 transient immunity Select when operating strictly ≤36 V and prioritizing switching efficiency over ruggedness
DMC2038LSD-13 RDS(on) = 0.052 Ω (N), 0.085 Ω (P); higher thermal resistance (RθJA = 62 °C/W) Limited to <2 A continuous due to thermal derating in enclosed environments Choose only for cost-sensitive, low-duty-cycle applications with ample heatsinking

Compared with Si7951DP and DMC2038LSD, IRF9952PBF offers superior avalanche energy, wider VDS margin, and tighter parametric matching-making it preferred for industrial and automotive H-bridge designs requiring reliability under transient stress.

Availability

IRF9952PBF is available at Aetrix Electronics and suitable for brushed motor control, USB-C power delivery switching, industrial PLC output modules, and automotive body control units requiring stable component supply and long-term lifecycle support.

Supply support for IRF9952PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

The IRF9952PBF belongs to Infineon's StrongIRFET™ family, designed specifically for high-reliability, space-constrained power conversion and motor drive applications demanding matched complementary performance.

FAQ

What is the maximum continuous drain current for each channel at 100 °C case temperature?

At TC = 100 °C, the N-channel supports ID = 2.2 A (derated from 3.5 A at 25 °C), and the P-channel supports ID = −1.6 A (derated from −2.3 A). These values are based on SO-8 thermal resistance (RθJC = 3.5 °C/W) and maximum junction temperature of 150 °C.

Can IRF9952PBF be used in synchronous buck converter topologies?

No-IRF9952PBF is not optimized for synchronous buck operation. Its P-channel device has higher RDS(on) and slower switching than dedicated high-side drivers, and its gate drive asymmetry increases shoot-through risk. It is intended for half-bridge and bidirectional switching, not DC-DC regulation.

Is the SO-8 package lead-free and RoHS compliant?

Yes, IRF9952PBF is manufactured with 100 % matte tin plating and complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30 °C/60 % RH.

How is the thermal pad on pins 7 and 8 electrically isolated?

Pins 7 and 8 are internally connected solely to their respective drain terminals (D1 and D2) and are not electrically tied together. The exposed copper pad beneath the SO-8 body is split into two isolated regions, each bonded to D1 and D2 respectively-enabling independent thermal sinking without shorting the high- and low-side drains.

IRF9952PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
3.5A, 2.3A
Rds On (Max) @ Id, Vgs:
100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
190pF @ 15V
Power - Max:
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

IRF9952PBF FAQ

1.How can I place an order for IRF9952PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9952PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9952PBF reliable?

The price and inventory of IRF9952PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9952PBF is usually 5 days.

3.What payment methods are accepted for IRF9952PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9952PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9952PBF?

IRF9952PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9952PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9952PBF?

For technical support, including IRF9952PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9952PBF requirements.

6.How does Aetrix verify that IRF9952PBF is sourced from the original manufacturer or authorized distributors?

All IRF9952PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9952PBF meets industry standards.

7.What is the process for return or replacement of IRF9952PBF?

All IRF9952PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9952PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9952PBF part is unused and in its original packaging.

Return procedure for IRF9952PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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