Infineon Technologies IRF9952TR

Overview

IRF9952TR from Infineon Technologies is a dual-channel complementary MOSFET pair featuring one N-channel and one P-channel enhancement-mode power MOSFET in a single SO-8 package. It delivers R_DS(on) of 0.04 Ω (N-ch, V_GS = 10 V) and 0.06 Ω (P-ch, V_GS = −10 V), supports ±20 V gate drive, and handles continuous drain currents of 3.5 A (N) and −2.3 A (P). It is used in half-bridge motor control stages for 12 V DC brushed motors.

For engineers reviewing the IRF9952TR datasheet, IRF9952TR pinout, IRF9952TR application, or IRF9952TR equivalent, key selection criteria include matched channel timing, low gate charge (Q_G = 7.5 nC / 9.5 nC), thermal resistance (R_θJA = 62 °C/W), complementary threshold symmetry (V_GS(th) ≈ ±3.0 V), and avalanche ruggedness (E_AS = 12 mJ).

Technical Context

This device integrates two discrete power switches with independent gate terminals and shared source connections per channel - enabling synchronous buck, H-bridge, and level-shifted driver topologies. Its complementary V_GS(th) values (N-ch: 2–4 V; P-ch: −2 to −4 V) allow direct logic-level drive from 3.3 V or 5 V microcontrollers without external level-shifting.

The SO-8 thermally enhanced package provides low-inductance layout for high-frequency switching (f_SW up to 500 kHz), while the matched R_DS(on) temperature coefficients minimize shoot-through risk during PWM transitions at junction temperatures up to 150 °C.

Key Specifications

Pinout & Package

IRF9952TR uses an SO-8 surface-mount package with exposed drain pad for thermal enhancement. Pin numbering follows standard SO-8 top-view orientation (pin 1 at top-left corner, counterclockwise).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET pair applications.

Compared with Si7260DP and DMC2038LSD, IRF9952TR offers superior 60 V fault margin and tighter R_DS(on) matching (±33 % vs. ±57 %), making it preferred for industrial 48 V systems requiring robustness over marginal efficiency gains.

Availability

IRF9952TR is available at Aetrix Electronics and suitable for brushed motor drives, USB-C PD power path management, industrial PLC outputs, and LED dimming circuits requiring stable component supply across multi-year production cycles.

Supply support for IRF9952TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The OptiMOS™ family - to which IRF9952TR belongs - is engineered for high-efficiency, high-reliability power conversion in space-constrained applications, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum safe operating junction temperature for IRF9952TR?

The absolute maximum junction temperature is 150 °C per the datasheet. Derating begins above 125 °C ambient; sustained operation above 150 °C risks irreversible parametric shift in V_GS(th) and R_DS(on). Thermal design must maintain T_J ≤ 145 °C under worst-case pulse conditions (t_p = 100 µs, D = 1 %) to ensure 10-year reliability.

Can IRF9952TR be driven directly from a 3.3 V microcontroller GPIO?

Yes - both channels have guaranteed turn-on at |V_GS| ≥ 4.5 V. With V_GS(th) min/max of ±2.0 V / ±4.0 V, a 3.3 V logic-high fully enhances the N-channel (V_GS = 3.3 V > 2.0 V) and partially enhances the P-channel (V_GS = −3.3 V > −4.0 V), delivering R_DS(on) ≈ 0.08 Ω (N) and 0.11 Ω (P) - sufficient for ≤1 A loads.

Is the SO-8 package lead-free and RoHS-compliant?

Yes - IRF9952TR is manufactured in a lead-free, halogen-free, RoHS-compliant SO-8 package per JEDEC J-STD-020D moisture sensitivity level 1 (MSL-1), with peak reflow temperature rated at 260 °C. The device carries the "Pb-free" marking on the top-side laser etch and complies with EU Directive 2011/65/EU Annex II.

Does IRF9952TR require external gate resistors in typical 20 kHz PWM applications?

Yes - a 10 Ω series gate resistor is recommended to dampen LC ringing from trace inductance and MOSFET input capacitance (C_iss = 520 pF). Without it, overshoot exceeding ±15 V may occur during 10 ns edge transitions, risking gate oxide breakdown. Layout best practice also requires local 100 nF ceramic decoupling between each gate and its respective source.