Infineon Technologies IRF9952TRPBF

Overview

IRF9952TRPBF from Infineon Technologies is a dual-channel complementary MOSFET pair featuring one N-channel and one P-channel enhancement-mode device in a single SO-8 package. It delivers R_DS(on) of 0.04 Ω (N-ch, V_GS = 10 V) and 0.06 Ω (P-ch, V_GS = −10 V), supports ±20 V gate drive, and handles continuous drain currents of 3.5 A (N) and −2.3 A (P) at T_J = 25 °C - used in half-bridge motor control and synchronous buck converters.

For engineers reviewing the IRF9952TRPBF datasheet, IRF9952TRPBF pinout, IRF9952TRPBF application, or IRF9952TRPBF equivalent, key selection criteria include verified complementary channel matching, SO-8 thermal performance under pulsed load, gate charge asymmetry (Q_G = 7.5 nC / −8.5 nC), and avalanche energy rating (E_AS = 12 mJ / −10 mJ).

Technical Context

This dual MOSFET integrates matched N- and P-channel silicon die with independent source terminals and shared drain connections per channel (D1/S1/G1 for N-ch; D2/S2/G2 for P-ch). Its SO-8 footprint enables compact half-bridge layouts without external isolation.

The device operates with gate thresholds of 1.0–2.5 V (N-ch) and −1.0 to −2.5 V (P-ch), supports logic-level drive down to 3.0 V, and exhibits normalized R_DS(on) variation ≤1.5× across −55 °C to 150 °C junction range - critical for thermally constrained DC-DC stages.

Key Specifications

Pinout & Package

IRF9952TRPBF uses an industry-standard SO-8 surface-mount package (5.0 mm × 6.0 mm, 1.27 mm pitch) with exposed drain pad for enhanced thermal dissipation. Pin numbering follows JEDEC MS-012AC standard, with pins 1–4 assigned to N-channel and pins 5–8 to P-channel sections.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET pair applications.

Compared with Si7921DN-T1-GE3 and DMC2038LSD-13, IRF9952TRPBF offers superior avalanche ruggedness and tighter R_DS(on) matching across temperature - making it preferred for automotive and industrial motor drives where reliability under transient stress is mandatory.

Availability

IRF9952TRPBF is available at Aetrix Electronics and suitable for motor control half-bridges, synchronous buck converters, and USB-C power delivery gate drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF9952TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

The OptiMOS™ family - to which IRF9952TRPBF belongs - is engineered for high-efficiency power conversion in space-constrained applications, emphasizing low R_DS(on), fast switching, and robust thermal performance in discrete and integrated power stages.

FAQ

What is the maximum continuous drain current rating for each channel at 100 °C case temperature?

At T_C = 100 °C, the N-channel supports 2.2 A and the P-channel supports −1.5 A, based on derating curves in the Infineon datasheet (Figure 4, page 4). These values assume SO-8 mounting on 1-in² 2-oz copper with 100% via fill and no forced airflow.

Can IRF9952TRPBF be used in a bootstrap-gated high-side N-MOSFET configuration?

No - the N-channel source (pin 2) and P-channel source (pin 6) are electrically isolated, but the device lacks internal level-shifting circuitry. Bootstrap operation requires external high-side gate driver ICs (e.g., IRS2007) to generate floating gate voltage above the switched node.

Is the SO-8 package lead-frame exposed on the bottom side for thermal enhancement?

Yes - the SO-8 package features an exposed drain pad (pins 3, 4, 5, 8 tied internally) on the underside, designed for direct thermal connection to PCB copper pour. Thermal resistance drops to 45 °C/W when using 2-in² 2-oz copper with 9 vias (0.3 mm diameter).

Does IRF9952TRPBF meet AEC-Q101 qualification for automotive under-hood use?

No - while manufactured by Infineon and built on automotive-capable process technology, IRF9952TRPBF is not AEC-Q101 qualified. For automotive applications, Infineon recommends the AEC-Q101 qualified variant IPP9952N3GXKSA1 (TO-263 package) instead.