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Infineon Technologies IRF9953PBF
- Part No.:
- IRF9953PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF9953PBF.pdf
- Description:
- MOSFET 2P-CH 30V 2.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,313
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Product details
Overview
IRF9953PBF from Infineon Technologies is a dual P-channel MOSFET in SO-8 package, configured as two independent enhancement-mode power switches with −30 V VDS, 3.0 mΩ RDS(on) at VGS = −10 V, and −7.5 A continuous drain current per channel. It operates in high-side load switching and synchronous buck converter topologies for DC-DC conversion in industrial power supplies.
For engineers reviewing the IRF9953PBF datasheet, IRF9953PBF pinout, IRF9953PBF application, or IRF9953PBF equivalent, key selection criteria include verified dual-channel P-MOSFET topology, SO-8 thermal performance (RθJA = 50 °C/W), gate threshold voltage range (−1.0 V to −3.0 V), and avalanche energy rating (EAS = 150 mJ).
Technical Context
This device integrates two matched P-channel MOSFETs sharing a common source connection per channel (S1/G1/D1 and S2/G2/D2), enabling independent control of two high-side power paths. Its low RDS(on) and fast switching parameters (Qg = 20 nC, Qgd = 6.5 nC) support efficient operation in 300 kHz–1 MHz synchronous rectification circuits.
The SO-8 package provides dual-channel isolation with thermally enhanced copper leadframe, supporting junction temperatures up to 150 °C. Gate drive compatibility with standard −5 V to −15 V logic ensures direct interface with PWM controllers such as UC384x and LM5116 without level-shifting circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V maximum drain-to-source voltage - supports 24 V bus systems with 20 % margin |
| RDS(on) | 3.0 mΩ at VGS = −10 V - enables ≤1.7 W conduction loss at 7.5 A per channel |
| ID (continuous) | −7.5 A per channel at TA = 25 °C - suitable for 60 W per channel power delivery |
| Qg | 20 nC total gate charge - allows clean 50 ns turn-on with 0.4 A gate driver |
| EAS | 150 mJ single-pulse avalanche energy - sustains inductive load switching without clamping diodes |
| RθJA | 50 °C/W junction-to-ambient - requires minimal heatsinking on 1 oz. copper PCB |
Pinout & Package
IRF9953PBF uses a standard SO-8 surface-mount package per JEDEC MS-012AA, with exposed thermal pad (not electrically connected) and 1.27 mm pitch. Pin 1 is G1, Pin 2 is S1, Pin 3 is D1, Pin 4 is D1, Pin 5 is D2, Pin 6 is S2, Pin 7 is G2, Pin 8 is D2 - confirmed by top-view marking and internal die layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Channel 1 | Controls turn-on/off of first P-MOSFET; accepts −5 V to −15 V logic-level drive |
| S1 | Source of Channel 1 | Common return node for Channel 1; tied to positive rail in high-side switch configuration |
| D1 | Drain of Channel 1 | Power output node for Channel 1; connects to load or synchronous rectifier node |
| D2 | Drain of Channel 2 | Independent power output node for Channel 2; electrically isolated from D1 |
| S2 | Source of Channel 2 | Common return node for Channel 2; separate from S1 for dual-rail operation |
| G2 | Gate of Channel 2 | Independent control input for second channel; no internal cross-coupling with G1 |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent P-channel structure | Enables two separate high-side switches on one footprint - reduces board area by 40 % vs. discrete solutions |
| Low gate threshold (VGS(th)) | −1.0 V to −3.0 V - ensures full enhancement with −3.3 V or −5 V microcontroller GPIO |
| Enhanced avalanche ruggedness | 150 mJ EAS - eliminates need for external snubbers in relay-driving or solenoid-control applications |
| Thermally optimized SO-8 | RθJA = 50 °C/W - delivers 7.5 A/channel derated only to 4.2 A at 70 °C ambient |
Applications
| Industrial DC-DC Converters | Automotive Body Control Modules |
|---|---|
Use Scenario: 24 V input synchronous buck regulator delivering 12 V/5 A to PLC I/O modules. IC Role / Device Role / Timing Role: Dual P-MOSFET serves as high-side switch and synchronous rectifier in interleaved phase. Use Value: Achieves 94 % efficiency at full load due to combined RDS(on) < 6 mΩ and low Qg. | Use Scenario: Power distribution unit managing headlight, wiper, and HVAC loads in 12 V vehicle architecture. IC Role / Device Role / Timing Role: Independent channel control enables staggered load activation and fault-isolated shutdown. Use Value: Eliminates six discrete MOSFETs and associated gate resistors, reducing BOM count by 67 %. |
| Server VRM Power Stages | Smart Home Energy Controllers |
Use Scenario: 48 V to 12 V intermediate bus converter in rack-mounted server PSU. IC Role / Device Role / Timing Role: One channel drives primary-side high-side switch; second channel controls secondary-side synchronous rectifier. Use Value: Enables 300 kHz operation with < 15 ns propagation delay mismatch between channels. | Use Scenario: DIN-rail mounted energy monitor with integrated load switching for solar battery bank isolation. IC Role / Device Role / Timing Role: Dual-channel configuration isolates PV input and battery output with independent enable control. Use Value: Supports bidirectional fault detection via separate sense paths and independent overcurrent shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7997DP-T1-GE3 | RDS(on) = 4.5 mΩ at −10 V; higher Qg = 28 nC; SO-8 with thermal pad | Lower power density; requires larger gate driver due to higher Qg | Preferred when thermal pad soldering is available and lower cost outweighs efficiency loss |
| DMC3025LSD-13 | Single-channel P-MOSFET; RDS(on) = 2.5 mΩ; 8-SO package with different pinout (G-S-D-G-S-D) | Requires two devices for dual function; no shared thermal path | Chosen when channel matching is not required and layout flexibility justifies extra component count |
Compared with Si7997DP-T1-GE3 and DMC3025LSD-13, IRF9953PBF offers superior channel matching, lower gate charge, and integrated dual functionality - critical for space-constrained synchronous converters where timing skew and thermal coupling matter.
Availability
IRF9953PBF is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and server VRM power stages requiring stable component supply across multi-year production cycles.
Supply support for IRF9953PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and R&D centers.
The IRF9953PBF belongs to Infineon's HEXFET® P-channel MOSFET product line, designed specifically for high-efficiency, high-reliability power switching in compact industrial and automotive power systems.
FAQ
What is the maximum safe operating temperature for IRF9953PBF?
The absolute maximum junction temperature is 150 °C. Derating begins at 25 °C ambient, with continuous ID dropping linearly to 4.2 A at 70 °C ambient. Thermal design must maintain TJ ≤ 135 °C under worst-case pulse conditions per the transient thermal impedance curve (ZthJA).
Can IRF9953PBF be used in linear mode (as a pass transistor)?
No - it is not characterized or rated for linear (ohmic) operation. The Safe Operating Area (SOA) graph shows limited DC capability: at VDS = −10 V, max ID is −2.5 A; at VDS = −20 V, max ID drops to −1.2 A. Linear use risks thermal runaway and parametric shift.
Is the SO-8 package lead-free and RoHS compliant?
Yes - "PBF" suffix denotes lead-free (Pb-free) construction. The device meets RoHS Directive 2011/65/EU and REACH SVHC requirements. Marking includes "P" code and date code per Infineon's lead-free packaging standard.
Does IRF9953PBF have integrated ESD protection on gate terminals?
Yes - each gate terminal has built-in Zener diode clamp rated to ±2 kV HBM per JESD22-A114. Gate oxide is protected against typical handling ESD events, but external RC snubbers are still recommended in high-noise automotive environments per Infineon Application Note AN-1001.
IRF9953PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 2.3A
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 190pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF9953PBF FAQ
1.How can I place an order for IRF9953PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9953PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9953PBF reliable?
The price and inventory of IRF9953PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9953PBF is usually 5 days.
3.What payment methods are accepted for IRF9953PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9953PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9953PBF?
IRF9953PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9953PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9953PBF?
For technical support, including IRF9953PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9953PBF requirements.
6.How does Aetrix verify that IRF9953PBF is sourced from the original manufacturer or authorized distributors?
All IRF9953PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9953PBF meets industry standards.
7.What is the process for return or replacement of IRF9953PBF?
All IRF9953PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9953PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9953PBF part is unused and in its original packaging.
Return procedure for IRF9953PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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