My Inquiry
My Account
Infineon Technologies IRF9953TR
- Part No.:
- IRF9953TR
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF9953TR.pdf
- Description:
- MOSFET 2P-CH 30V 2.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,542
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF9953TR from Infineon Technologies is a dual P-channel MOSFET in SO-8 package, configured as two independent enhancement-mode power switches with −30 V VDS, 3.0 Ω RDS(on) at VGS = −10 V, and −2.3 A continuous drain current per channel. It operates in high-side load switching and dual-H-bridge motor control applications requiring matched complementary conduction.
For engineers reviewing the IRF9953TR datasheet, IRF9953TR pinout, IRF9953TR application, or IRF9953TR equivalent, key selection criteria include verified dual-channel thermal coupling, gate threshold symmetry (VGS(th) = −1.0 to −2.5 V), SO-8 footprint compatibility, and avalanche energy rating (EAS = 150 mJ).
Technical Context
This device integrates two discrete P-MOSFETs on a single die with shared thermal substrate, enabling synchronized switching and matched dynamic parameters. Each channel supports −30 V blocking voltage, −2.3 A DC current, and exhibits RDS(on) ≤ 3.0 Ω at −10 V gate drive and ≤ 4.5 Ω at −4.5 V.
The SO-8 package provides low thermal resistance (RθJA = 70 °C/W) and supports pulsed operation up to 100% duty cycle at TJ ≤ 150 °C. Gate charge is 12 nC total per channel, with Qg/Qgd ratio optimized for fast turn-on while limiting shoot-through risk in half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V maximum drain-to-source voltage; enables use in 24 V automotive and industrial bus systems with margin. |
| RDS(on) @ VGS = −10 V | ≤ 3.0 Ω per channel; ensures <1.5 W conduction loss at −2.3 A, suitable for thermally constrained PCB layouts. |
| ID (continuous) | −2.3 A per channel at TA = 25 °C; derates to −1.3 A at 100 °C ambient in SO-8 without heatsink. |
| Qg (total gate charge) | 12 nC per channel; allows efficient driving with standard logic-level gate drivers (e.g., TC4427) at ≤1 MHz switching. |
| EAS | 150 mJ single-pulse avalanche energy; supports robustness against inductive load turn-off transients in relay/motor drive circuits. |
| VGS(th) | −1.0 V to −2.5 V; guarantees reliable turn-on with 3.3 V or 5 V microcontroller GPIOs using simple level-shifting. |
Pinout & Package
IRF9953TR uses JEDEC-standard SO-8 (MS-012AA) package with exposed drain pad for thermal enhancement. Pin 1 is G1, Pin 2 is S1, Pin 3 is D1, Pin 4 is D1, Pin 5 is D2, Pin 6 is S2, Pin 7 is G2, Pin 8 is D2 - confirmed by top-view marking and internal die layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Channel 1 | Controls conduction of first P-MOSFET; referenced to S1; requires negative gate drive relative to source. |
| S1 | Source of Channel 1 | Common return node for Channel 1; tied to load high-side rail or bridge midpoint in H-bridge. |
| D1 | Drain of Channel 1 | Connects to power rail (e.g., +24 V); pins 3 and 4 are internally paralleled for current sharing and lower inductance. |
| D2 | Drain of Channel 2 | Connects to second load or complementary bridge leg; pins 5 and 8 are internally paralleled. |
| S2 | Source of Channel 2 | Independent source node for Channel 2; enables dual independent high-side switches or synchronous rectification. |
| G2 | Gate of Channel 2 | Independent gate input; allows asynchronous control of second channel without cross-talk. |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched P-channel MOSFETs | Guaranteed parameter tracking (RDS(on), VGS(th), Qg) between channels improves current balance in parallel or bridge configurations. |
| SO-8 with exposed drain pad | Reduces RθJA to 70 °C/W and enables direct thermal coupling to PCB copper pour for >1.5 W sustained dissipation. |
| 150 mJ avalanche energy rating | Eliminates need for external snubbers in 24 V solenoid or brushed DC motor commutation circuits. |
| −4.5 V gate drive capability | Supports direct interface with 5 V logic without gate driver ICs, reducing BOM count in space-constrained modules. |
Applications
| Brushed DC Motor Control | High-Side Load Switching |
|---|---|
Use Scenario: Bidirectional control of 12–24 V brushed DC motors in automotive seat adjusters and industrial actuators. IC Role / Device Role / Timing Role: Dual P-MOSFET provides complementary high-side switching in H-bridge topology; each channel handles one motor terminal. Use Value: Matched RDS(on) minimizes torque asymmetry; SO-8 thermal performance sustains 1.8 A RMS current without forced air. | Use Scenario: Power sequencing and fault-isolated supply enable for 24 V subsystems in PLC I/O modules. IC Role / Device Role / Timing Role: Two independent high-side switches manage separate 24 V rails (e.g., analog sensor supply and digital logic supply). Use Value: Independent gate control allows staggered ramp-up; integrated avalanche ruggedness prevents failure during hot-plug events. |
| LED Driver for Automotive Lighting | Industrial Relay Replacement |
Use Scenario: PWM dimming of high-brightness LED strings (e.g., tail lamps, daytime running lights) in 12 V vehicle platforms. IC Role / Device Role / Timing Role: High-side switch modulates current through LED string; second channel drives auxiliary functions (e.g., amber flasher). Use Value: −4.5 V turn-on threshold enables direct MCU PWM output; 150 mJ EAS absorbs inductive kickback from LED current-sense shunt transients. | Use Scenario: Solid-state replacement of electromechanical relays in HVAC control panels and building automation systems. IC Role / Device Role / Timing Role: One channel controls main load (e.g., fan), second channel monitors status via sense resistor in source path. Use Value: Matched VGS(th) ensures consistent turn-on timing across channels; SO-8 footprint fits legacy relay PCB footprints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7953DP-T1-GE3 | RDS(on) = 2.8 Ω @ −10 V; higher Qg (14.5 nC); same SO-8 package. | Better conduction loss but slower switching; less suitable for >500 kHz PWM LED drivers. | Prefer when thermal margin is critical and switching frequency ≤200 kHz. |
| DMN601DWK-7 | Single-channel dual-die P-MOSFET; RDS(on) = 3.2 Ω @ −10 V; no internal channel isolation. | Lacks independent source terminals; unsuitable for asymmetric load switching or current sensing per channel. | Select only when both channels drive identical loads with common source reference. |
Compared with Si7953DP-T1-GE3 and DMN601DWK-7, IRF9953TR offers balanced trade-offs: lower gate charge than Si7953DP for faster switching, and true dual-channel independence absent in DMN601DWK-critical for H-bridge and differential sensing designs.
Availability
IRF9953TR is available at Aetrix Electronics and suitable for brushed DC motor control, high-side load switching, LED driver circuits, and industrial relay replacement requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF9953TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
The IRF9953TR belongs to Infineon's HEXFET® P-channel MOSFET product line, designed specifically for high-reliability, high-efficiency power switching in space- and thermally constrained industrial and automotive modules.
FAQ
What is the maximum safe operating temperature for IRF9953TR?
The junction temperature must not exceed 150 °C under continuous operation. With RθJA = 70 °C/W and 1 W power dissipation, ambient temperature must stay below 80 °C on standard FR-4 PCB with 1-in² 2-oz copper pour. Derating curves in the datasheet confirm −1.3 A ID limit at 100 °C ambient.
Can IRF9953TR be used in a synchronous buck converter as high-side switch?
No-IRF9953TR is a P-channel device intended for high-side switching but lacks integrated bootstrap circuitry or gate driver co-location required for synchronous buck top-side operation. It is suitable for non-synchronous buck (with external diode) or as low-side switch in inverted buck-boost topologies where source is grounded.
Is the SO-8 package lead-free and RoHS-compliant?
Yes-IRF9953TR is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1). The part marking includes "P" designation for lead-free per Infineon's packaging standard.
How does the dual-channel structure affect thermal performance?
Both channels share a common silicon die and thermal path to the exposed drain pad. Under unbalanced loading, heat from the higher-current channel raises the junction temperature of the other channel, requiring derating based on total power (PD = 2.5 W max at TA = 25 °C) rather than per-channel ratings.
IRF9953TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 2.3A
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 190pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF9953TR FAQ
1.How can I place an order for IRF9953TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9953TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9953TR reliable?
The price and inventory of IRF9953TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9953TR is usually 5 days.
3.What payment methods are accepted for IRF9953TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9953TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9953TR?
IRF9953TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9953TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9953TR?
For technical support, including IRF9953TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9953TR requirements.
6.How does Aetrix verify that IRF9953TR is sourced from the original manufacturer or authorized distributors?
All IRF9953TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9953TR meets industry standards.
7.What is the process for return or replacement of IRF9953TR?
All IRF9953TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF9953TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9953TR part is unused and in its original packaging.
Return procedure for IRF9953TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF9953TR Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
