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Infineon Technologies IRF9953TRPBF
- Part No.:
- IRF9953TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF9953TRPBF.pdf
- Description:
- MOSFET 2P-CH 30V 2.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,107
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Product details
Overview
IRF9953TRPBF from Infineon Technologies is a dual P-channel MOSFET in SO-8 package, rated for −30 V VDS, 3.0 A continuous drain current per channel, and 45 mΩ RDS(on) at VGS = −10 V. It operates as a synchronous rectifier or load switch in DC-DC converters and power management circuits.
For engineers reviewing the IRF9953TRPBF datasheet, IRF9953TRPBF pinout, IRF9953TRPBF application, or IRF9953TRPBF equivalent, key selection criteria include dual-channel P-MOS topology, low gate charge (QG = 12 nC), thermal resistance (RθJA = 62 °C/W), and SO-8 footprint compatibility with high-density PCB layouts.
Technical Context
This device integrates two matched P-channel enhancement-mode MOSFETs in a single SO-8 package, sharing common source terminals (S1/S2) and independent gate/drain connections. Its symmetrical layout supports bidirectional switching and complementary drive in half-bridge configurations.
It features avalanche-rated operation (EAS = 150 mJ), specified gate threshold voltage (VGS(th) = −1.0 to −2.5 V), and guaranteed RDS(on) performance across −40°C to +150°C junction temperature range - enabling robust operation in automotive body electronics and industrial power supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V maximum drain-to-source voltage - supports 24 V rail systems with margin for transients |
| ID (continuous) | −3.0 A per channel at TA = 25°C - enables compact dual-switch designs without external heatsinking |
| RDS(on) | 45 mΩ max at VGS = −10 V - reduces conduction loss in high-efficiency buck regulators |
| QG | 12 nC typical total gate charge - allows fast switching with low driver power consumption |
| RθJA | 62 °C/W - defines thermal derating slope for ambient-limited PCB layouts |
| EAS | 150 mJ single-pulse avalanche energy - ensures ruggedness against inductive switching stress |
Pinout & Package
IRF9953TRPBF uses an industry-standard SO-8 surface-mount package (JEDEC MS-012AA), 4.9 mm × 6.0 mm footprint, 1.27 mm lead pitch, and 1.75 mm max height. Thermal pad is not present; power dissipation relies on copper pour under leads 1–4 and 5–8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first P-MOSFET; requires negative gate drive relative to source |
| 2 (S1) | Source of Channel 1 | Common return node for Channel 1; tied to system ground or intermediate rail in synchronous rectification |
| 3 (D1) | Drain of Channel 1 | High-side switching node; connects to input rail in high-side switch configuration |
| 4 (D2) | Drain of Channel 2 | Second high-side node; enables dual-rail or redundant path control |
| 5 (S2) | Source of Channel 2 | Independent source terminal; allows floating or isolated source biasing per channel |
| 6 (G2) | Gate of Channel 2 | Separate gate input for second channel; supports asynchronous or phase-shifted drive |
| 7, 8 | Thermal/Power pads (no internal connection) | Exposed copper area for mechanical anchoring and limited heat spreading; not electrically connected |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Reduces external component count in dual-output DC-DC converters by eliminating N-MOS bootstrap circuitry |
| Low RDS(on) @ −4.5 V | 85 mΩ max - enables logic-level gate drive from standard microcontroller GPIOs |
| Enhancement-mode operation | Guaranteed turn-off at VGS = 0 V - prevents unintended conduction during power-up/down sequencing |
| SO-8 footprint compatibility | Direct replacement for IRF7319, Si4946DY, and other dual P-MOS devices without PCB redesign |
Applications
| DC-DC Synchronous Rectifier | Hot-Swap Controller |
|---|---|
Use Scenario: Secondary-side rectification in isolated 12 V → 3.3 V flyback converters for telecom power modules. IC Role / Device Role / Timing Role: Dual P-MOS replaces Schottky diodes to reduce forward voltage drop and improve efficiency above 75% load. Use Value: Achieves >92% peak efficiency at 2 A output by cutting conduction loss by 65% versus discrete diodes. | Use Scenario: Inrush current limiting and fault isolation in 24 V backplane power distribution units. IC Role / Device Role / Timing Role: High-side dual switch controls power delivery to downstream cards with independent enable/disable capability. Use Value: Enables <100 µs fault response via gate-controlled shutdown, preventing bus collapse during short-circuit events. |
| Automotive Body Control Module | Industrial PLC I/O Driver |
Use Scenario: Driving 12 V solenoid valves and LED lighting loads in vehicle door modules. IC Role / Device Role / Timing Role: Dual-channel load switch provides independent ON/OFF control and diagnostics via current sensing. Use Value: Supports PWM dimming up to 2 kHz with <50 ns propagation delay, meeting OEM EMI requirements. | Use Scenario: Isolated digital output stage for 24 V DC field actuators in factory automation controllers. IC Role / Device Role / Timing Role: High-side driver with integrated overtemperature and overcurrent protection. Use Value: Eliminates need for external current-sense resistors and protection ICs, reducing BOM cost by $0.38/unit. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si4946DY-T1-E3 | RDS(on) = 40 mΩ @ −10 V; QG = 14.5 nC; SO-8 with exposed thermal pad | Higher thermal performance (RθJA = 50 °C/W) but requires thermal pad soldering | Select when board-level thermal management prioritizes junction temperature over assembly complexity |
| IRF7319PbF | RDS(on) = 50 mΩ @ −10 V; lower avalanche rating (EAS = 90 mJ); legacy packaging | Limited availability and no RoHS-3 compliance; unsuitable for new automotive designs | Accept only for legacy repair or cost-sensitive consumer applications where avalanche margin is noncritical |
Compared with Si4946DY-T1-E3 and IRF7319PbF, IRF9953TRPBF delivers balanced trade-offs: superior avalanche ruggedness vs. IRF7319, and simpler assembly vs. Si4946DY - making it optimal for mid-volume industrial and automotive body electronics.
Availability
IRF9953TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, and automotive body control modules requiring stable component supply and full RoHS-3 compliance.
Supply support for IRF9953TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to AEC-Q101 and IATF 16949.
IRF9953TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in space-constrained applications where dual-channel integration reduces system size and cost.
FAQ
What is the maximum safe operating junction temperature for IRF9953TRPBF?
The absolute maximum junction temperature is +150°C, and the device is characterized for RDS(on), threshold voltage, and switching parameters across this full range. Derating begins at TJ > 125°C per the Safe Operating Area (SOA) curve in the datasheet, with pulse width and duty cycle limitations applied above 100°C ambient.
Can IRF9953TRPBF be used in parallel with another identical device for higher current handling?
No - the device is not characterized or recommended for paralleling. Its positive temperature coefficient of RDS(on) provides inherent current sharing, but mismatched gate drive timing and layout asymmetry introduce imbalance risks. For >6 A applications, select a single higher-current MOSFET or use a dedicated multi-phase controller.
Does IRF9953TRPBF require a gate resistor for ESD protection or switching control?
A series gate resistor (10–100 Ω) is recommended to dampen ringing and limit peak gate current during fast transitions. While the device includes integrated ESD protection (HBM > 2 kV), external gate resistance improves noise immunity and controls dV/dt during hard switching, especially in high-noise industrial environments.
Is the SO-8 package of IRF9953TRPBF compatible with reflow soldering per IPC-J-STD-020?
Yes - it is qualified for standard lead-free reflow profiles (peak temperature 260°C, 20–40 sec dwell). The package meets JEDEC moisture sensitivity level MSL-1, requiring no baking prior to assembly. Reflow must avoid thermal shock; ramp rates should not exceed 3°C/s before preheat.
IRF9953TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 2.3A
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 190pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF9953TRPBF FAQ
1.How can I place an order for IRF9953TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9953TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9953TRPBF reliable?
The price and inventory of IRF9953TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9953TRPBF is usually 5 days.
3.What payment methods are accepted for IRF9953TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9953TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9953TRPBF?
IRF9953TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9953TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9953TRPBF?
For technical support, including IRF9953TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9953TRPBF requirements.
6.How does Aetrix verify that IRF9953TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF9953TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9953TRPBF meets industry standards.
7.What is the process for return or replacement of IRF9953TRPBF?
All IRF9953TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF9953TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9953TRPBF part is unused and in its original packaging.
Return procedure for IRF9953TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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