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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z14

Name: IRF9Z14
Brand: Vishay Siliconix
SKU: IRF9Z14
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9Z14

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF9Z14.pdf

Description:: MOSFET P-CH 60V 6.7A TO220AB

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Product details

Overview

IRF9Z14 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -60 V V_DS, 0.50 Ω R_DS(on) at V_GS = -10 V, and -6.7 A continuous drain current at T_C = 25 °C. It supports repetitive avalanche operation, features fast switching (t_r = 63 ns), and is optimized for DC-DC converters, motor control, and high-side load switching in industrial power supplies.

For engineers reviewing the IRF9Z14 datasheet, IRF9Z14 pinout, IRF9Z14 application, or IRF9Z14 equivalent, key selection criteria include its -60 V blocking capability, low gate charge (Q_g = 12 nC), ruggedized avalanche rating (E_AS = 140 mJ), thermal robustness to +175 °C, and compatibility with standard gate drivers due to simple drive requirements.

Technical Context

This device operates as a high-side switch in buck regulators and polarity-reversal circuits, leveraging its P-channel topology to eliminate bootstrap complexity. Its dynamic dV/dt rating (-4.5 V/ns) and body diode recovery time (t_rr = 80–160 ns) support reliable operation in hard-switched topologies with inductive loads.

The IRF9Z14 integrates a monolithic p-n junction body diode with V_SD = -5.5 V at I_S = -6.7 A and Q_rr = 0.096–0.19 μC, enabling synchronous rectification alternatives while maintaining avalanche-rated ruggedness under unclamped inductive switching (I_AR = -6.7 A, E_AR = 4.3 mJ).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum reverse drain-source voltage before breakdown; defines safe operating range in high-side configurations.
R_DS(on)	0.50 Ω @ V_GS = -10 V - Low conduction loss at full gate drive; enables ≤ 22.5 W conduction loss at -6.7 A.
Q_g	12 nC - Total gate charge determines driver strength requirement; compatible with low-power logic-level gate drivers.
t_r / t_f	63 ns / 31 ns - Fast switching transitions reduce switching losses in PWM applications above 100 kHz.
E_AS	140 mJ - Single-pulse avalanche energy rating allows safe operation during transient overvoltage events without external snubbers.
T_J max	+175 °C - High junction temperature rating supports compact heatsink designs and extended operation in sealed enclosures.

Pinout & Package

IRF9Z14 is housed in a TO-220AB package with standard three-terminal layout: Drain (D) connected to tab, Source (S) and Gate (G) on leads. The metal tab is electrically connected to the Drain, requiring isolation when mounted to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Main high-side power terminal; electrically tied to metal tab-requires insulating washer if heatsink is grounded.
G	Gate	Control input; threshold voltage V_GS(th) = -2.0 to -4.0 V enables TTL/CMOS-compatible drive with negative bias.
S	Source	Reference node for gate drive; connects to positive rail in high-side switch configuration.

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports repeated inductive turn-off stress up to I_AR = -6.7 A without degradation-eliminates need for external clamping in relay/motor drive circuits.
Dynamic dV/dt immunity	-4.5 V/ns rating prevents false turn-on during high dv/dt transients in noisy industrial environments.
Low R_DS(on) × Q_g figure of merit	6.0 Ω·nC - Balances conduction and switching losses for optimal efficiency in 20–200 kHz SMPS designs.
TO-220AB thermal performance	R_thJC = 3.5 °C/W - Enables 43 W power dissipation at T_C = 25 °C with minimal heatsink volume.

Applications

High-Side Load Switch	DC-DC Buck Converter
Use Scenario: Power sequencing and hot-swap control in industrial PLC modules where supply rail must be isolated during fault conditions. IC Role / Device Role / Timing Role: P-channel high-side switch controlling +24 V distribution with fast turn-off (<100 ns fall time) to limit fault energy. Use Value: Eliminates need for level-shifting gate drivers; R_DS(on) = 0.50 Ω limits voltage drop to <1.7 V at 3.4 A load current.	Use Scenario: Synchronous rectification in non-isolated buck converters powering FPGA core rails (1.2 V @ 10 A). IC Role / Device Role / Timing Role: High-side switching element operating at 300 kHz with 63 ns rise time to minimize dead-time losses. Use Value: Q_g = 12 nC reduces gate drive power to <15 mW at 300 kHz, easing thermal design of integrated driver ICs.
Motor Direction Control	Power Supply OR-ing
Use Scenario: H-bridge half-bridge leg in 24 V brushed DC motor drivers for automated valve actuators. IC Role / Device Role / Timing Role: Upper-leg P-channel switch commutating inductive load with body diode recovery t_rr = 80–160 ns. Use Value: Avalanche rating (E_AS = 140 mJ) absorbs flyback energy during PWM off-time without snubber networks.	Use Scenario: Redundant 12 V input OR-ing in telecom power shelves with automatic failover between two AC/DC supplies. IC Role / Device Role / Timing Role: Back-to-back configured P-channel MOSFET providing low-loss reverse-current blocking. Use Value: V_GS(th) = -2.0 to -4.0 V ensures reliable turn-on with simple resistor-divider biasing from 12 V rail.

High-Side Load Switch

DC-DC Buck Converter

Use Scenario: Power sequencing and hot-swap control in industrial PLC modules where supply rail must be isolated during fault conditions.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling +24 V distribution with fast turn-off (<100 ns fall time) to limit fault energy.

Use Value: Eliminates need for level-shifting gate drivers; R_DS(on) = 0.50 Ω limits voltage drop to <1.7 V at 3.4 A load current.

Use Scenario: Synchronous rectification in non-isolated buck converters powering FPGA core rails (1.2 V @ 10 A).

IC Role / Device Role / Timing Role: High-side switching element operating at 300 kHz with 63 ns rise time to minimize dead-time losses.

Use Value: Q_g = 12 nC reduces gate drive power to <15 mW at 300 kHz, easing thermal design of integrated driver ICs.

Motor Direction Control

Power Supply OR-ing

Use Scenario: H-bridge half-bridge leg in 24 V brushed DC motor drivers for automated valve actuators.

IC Role / Device Role / Timing Role: Upper-leg P-channel switch commutating inductive load with body diode recovery t_rr = 80–160 ns.

Use Value: Avalanche rating (E_AS = 140 mJ) absorbs flyback energy during PWM off-time without snubber networks.

Use Scenario: Redundant 12 V input OR-ing in telecom power shelves with automatic failover between two AC/DC supplies.

IC Role / Device Role / Timing Role: Back-to-back configured P-channel MOSFET providing low-loss reverse-current blocking.

Use Value: V_GS(th) = -2.0 to -4.0 V ensures reliable turn-on with simple resistor-divider biasing from 12 V rail.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	V_DS = -100 V, R_DS(on) = 0.20 Ω @ -10 V, Q_g = 83 nC - higher voltage rating but 7× higher gate charge.	Preferred in 48 V systems requiring >60 V margin; unsuitable for high-frequency switching due to slow t_r = 200 ns.	Select IRF9540NPbF only when -100 V rating is mandatory and switching frequency is below 50 kHz.
FQP27P06	V_DS = -60 V, R_DS(on) = 0.085 Ω @ -10 V, Q_g = 42 nC - lower R_DS(on) but 3.5× higher Q_g and no specified avalanche rating.	Better for low-conduction-loss linear regulators; not recommended for inductive switching without external protection.	Choose FQP27P06 only for resistive loads or when avalanche ruggedness is not required and gate drive capability exceeds 100 mA peak.

Compared with IRF9Z14, IRF9540NPbF trades switching speed for higher voltage headroom, while FQP27P06 sacrifices avalanche reliability for lower on-resistance-making IRF9Z14 the balanced choice for cost-sensitive, medium-frequency industrial switching where ruggedness and drive simplicity are critical.

Availability

IRF9Z14 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and high-side load switching requiring stable component supply across multi-year production cycles.

Supply support for IRF9Z14 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and industrial reliability.

The IRF9Z14 belongs to Vishay's third-generation power MOSFET family designed specifically for commercial-industrial power conversion, emphasizing fast switching, low R_DS(on), and repetitive avalanche capability without sacrificing cost-effectiveness.

FAQ

What is the maximum continuous drain current for the IRF9Z14 at 100 °C case temperature?

The IRF9Z14 supports -4.7 A continuous drain current at T_C = 100 °C, derated from -6.7 A at 25 °C using a linear derating factor of 0.29 W/°C. This value reflects thermal limitations of the TO-220AB package and must be validated against actual heatsink performance in the target application. The IRF9Z14 datasheet specifies this rating in absolute maximum ratings Table 1.

Does the IRF9Z14 have a specified avalanche energy rating?

Yes, the IRF9Z14 is repetitively avalanche rated with E_AR = 4.3 mJ and single-pulse avalanche energy E_AS = 140 mJ under defined test conditions (V_DD = -25 V, I_AS = -6.7 A). These values are measured per JEDEC JESD24-11 and confirm the IRF9Z14 can safely absorb inductive switching energy without failure in properly designed circuits.

What is the gate-source threshold voltage range for the IRF9Z14?

The IRF9Z14 has a gate-source threshold voltage V_GS(th) ranging from -2.0 V to -4.0 V at I_D = -250 μA, confirming its compatibility with standard -5 V or -10 V gate drive rails. This threshold range ensures predictable turn-on behavior across temperature and process variation, and is explicitly listed in the IRF9Z14 specifications table on page 2 of the datasheet.

Can the IRF9Z14 be used in parallel configurations?

Yes, the IRF9Z14 is designed for ease of paralleling due to its positive R_DS(on) temperature coefficient, which promotes current sharing across multiple devices. The IRF9Z14 datasheet explicitly lists "Ease of paralleling" as a feature, and thermal stability up to +175 °C further supports reliable multi-device operation in high-current applications.

Is the IRF9Z14 RoHS-compliant and halogen-free?

The IRF9Z14PbF-BE3 variant is both lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and IEC 61249-2-21 standards. This is confirmed in the ordering information section of the IRF9Z14 datasheet, where "IRF9Z14PbF-BE3" is designated as the halogen-free version with matte tin lead finish.

IRF9Z14 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 6.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF9Z14 FAQ

1.How can I place an order for IRF9Z14 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z14 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z14 reliable?

The price and inventory of IRF9Z14 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z14 is usually 5 days.

3.What payment methods are accepted for IRF9Z14?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z14 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z14?

IRF9Z14 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z14 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z14?

For technical support, including IRF9Z14 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z14 requirements.

6.How does Aetrix verify that IRF9Z14 is sourced from the original manufacturer or authorized distributors?

All IRF9Z14 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z14 meets industry standards.

7.What is the process for return or replacement of IRF9Z14?

All IRF9Z14 units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z14, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z14 part is unused and in its original packaging.

Return procedure for IRF9Z14:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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