Vishay Siliconix IRF9Z14LPBF

Overview

IRF9Z14LPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in low-profile through-hole I2PAK (TO-262) package, rated for -60 V V_DS, 0.50 Ω R_DS(on) at V_GS = -10 V, 6.7 A continuous drain current at T_C = 25 °C, fully avalanche rated, and qualified for operation up to +175 °C junction temperature - used in DC-DC synchronous buck converters and high-side load switches.

For engineers reviewing the IRF9Z14LPBF datasheet, IRF9Z14LPBF pinout, IRF9Z14LPBF application, or IRF9Z14LPBF equivalent, this page delivers verified electrical parameters, thermal performance data, real-world switching behavior (t_d(on) = 11 ns, t_f = 31 ns), body diode recovery specs (t_rr = 80–160 ns), and validated alternative parts for industrial power management designs.

Technical Context

This device employs Vishay's third-generation silicon process to achieve low on-resistance per die area while maintaining ruggedness against repetitive avalanche stress (E_AR = 4.3 mJ). Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard -10 V gate drive and supports partial logic-level compatibility down to -5 V.

The integrated body diode exhibits V_SD = -5.5 V at I_S = -6.7 A and controlled reverse recovery (Q_rr = 96–190 nC), enabling use in freewheeling paths without external Schottky supplementation in moderate-frequency SMPS. Thermal resistance R_thJC = 3.5 °C/W enables high-power dissipation when mounted on heatsinked PCBs.

Key Specifications

Pinout & Package

I2PAK (TO-262) low-profile through-hole package with isolated tab (drain-connected), optimized for manual assembly and thermal relief via copper pour on PCB backside.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with IRF9Z14LPBF, IRF9Z34NPBF offers lower on-resistance but sacrifices switching speed and form factor, while SiHF9Z14L-GE3 provides identical electrical and mechanical performance with updated environmental compliance - making it a direct drop-in replacement where RoHS is mandated.

Availability

IRF9Z14LPBF is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, and DC-DC synchronous buck converter designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRF9Z14LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF9Z14LPBF belongs to Vishay's third-generation power MOSFET family engineered for high-efficiency, high-temperature operation in demanding power switching applications - emphasizing ruggedness, low conduction loss, and repeatable avalanche performance.

FAQ

What is the maximum continuous drain current rating for IRF9Z14LPBF at 100 °C case temperature?

The IRF9Z14LPBF is rated for -4.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the I2PAK package and must be applied when heatsinking is insufficient to maintain T_C ≤ 25 °C. Designers should verify junction temperature using R_thJC = 3.5 °C/W and actual power dissipation to ensure T_J remains within -55 °C to +175 °C limits. The IRF9Z14LPBF maintains full functionality across this entire range.

Does IRF9Z14LPBF support logic-level gate drive?

The IRF9Z14LPBF has a gate threshold voltage range of -2.0 V to -4.0 V, meaning it begins conducting at modest negative gate-source voltages. However, it is not a true logic-level MOSFET: full enhancement to R_DS(on) = 0.50 Ω requires V_GS = -10 V. At -5 V, R_DS(on) rises significantly (not specified in datasheet), so reliable operation demands a dedicated gate driver capable of delivering ±10 V or higher swing. The IRF9Z14LPBF is therefore best paired with standard MOSFET drivers rather than 3.3 V or 5 V microcontroller GPIOs directly.

What is the avalanche energy rating of IRF9Z14LPBF and how is it tested?

The IRF9Z14LPBF is fully avalanche rated with a single-pulse avalanche energy (E_AS) of 140 mJ and repetitive avalanche energy (E_AR) of 4.3 mJ. Testing follows the unclamped inductive switching method per Figure 12a: V_DD = -25 V, I_AS = -6.7 A, L = 3.6 mH, R_g = 25 Ω, starting T_J = 25 °C. This validates robustness against inductive kickback in relay, solenoid, and motor drive applications. The IRF9Z14LPBF sustains these stresses without parameter shift or failure when operated within its Safe Operating Area.

Can IRF9Z14LPBF be used in parallel with other MOSFETs for higher current handling?

Yes, the IRF9Z14LPBF can be paralleled, but careful attention to gate drive matching and current sharing is required. Its positive temperature coefficient of R_DS(on) (see Fig. 4) promotes inherent current balancing as temperature rises - a key advantage for paralleling. Designers must ensure matched gate resistors, symmetrical PCB layout, and shared heatsinking. Derating total current by ≥20% is recommended. The IRF9Z14LPBF's low Q_gd/Q_gs ratio also improves dynamic sharing stability compared to devices with higher Miller charge.

What is the thermal resistance from junction to case (R_thJC) for IRF9Z14LPBF and how does it impact heatsink selection?

The IRF9Z14LPBF has a maximum junction-to-case thermal resistance (R_thJC) of 3.5 °C/W, measured from die to the drain-connected tab. This value enables effective heat transfer to an external heatsink when the tab is properly mounted with thermal interface material. For example, at 6.7 A and 0.50 Ω R_DS(on), conduction loss is ~22.5 W; with R_thJC = 3.5 °C/W and a heatsink at 60 °C, junction temperature reaches ~139 °C - well within the 175 °C limit. The IRF9Z14LPBF thus supports high-power operation with modest heatsinking in I2PAK form factor.