Vishay Siliconix IRF9Z24

Overview

IRF9Z24 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -60 V V_DS, 0.28 Ω R_DS(on) at V_GS = -10 V, and -11 A continuous drain current at T_C = 25 °C. It delivers fast switching, repetitive avalanche capability, and operates up to +175 °C junction temperature - commonly used in DC-DC converter high-side switches and motor control H-bridge top switches.

For engineers reviewing the IRF9Z24 datasheet, IRF9Z24 pinout, IRF9Z24 application, or IRF9Z24 equivalent, key selection criteria include verified -60 V blocking rating, confirmed 0.28 Ω on-resistance at -10 V gate drive, validated -11 A thermal current limit at 25 °C case temperature, and TO-220AB mechanical compatibility with standard heatsink mounting.

Technical Context

This discrete P-channel MOSFET uses planar silicon technology optimized for ruggedness and dynamic dV/dt immunity. Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard logic-level negative gate drive while maintaining noise margin against spurious conduction.

The device integrates a low-inductance internal body diode (L_D = 4.5 nH, L_S = 7.5 nH) and supports unclamped inductive switching with 240 mJ single-pulse avalanche energy. Its 19 nC total gate charge and 5.4 nC gate-source charge enable efficient drive with standard gate drivers at moderate switching frequencies.

Key Specifications

Pinout & Package

IRF9Z24 is housed in a TO-220AB package with standard three-terminal layout: Drain (D) connected to tab, Source (S) and Gate (G) on leads. The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless circuit topology permits common-drain configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRF9Z24, IRF9540NPbF trades higher voltage safety margin for increased switching loss, while IRF4905PbF reduces conduction loss at the cost of reduced V_DS margin and greater gate drive burden - making IRF9Z24 the balanced choice for 24–48 V industrial power switching where reliability, drive simplicity, and thermal robustness are co-prioritized.

Availability

IRF9Z24 is available at Aetrix Electronics and suitable for DC-DC converters, motor control H-bridges, and LED drivers requiring stable component supply across industrial production cycles.

Supply support for IRF9Z24 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRF9Z24 belongs to Vishay's third-generation power MOSFET family engineered for commercial-industrial applications up to ~50 W dissipation, emphasizing fast switching, low R_DS(on), and ease of paralleling in high-current designs.

FAQ

What is the maximum gate-source voltage rating for IRF9Z24?

The IRF9Z24 has an absolute maximum gate-source voltage rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. In practice, gate drive circuits should be designed to clamp V_GS within -20 V to +20 V, with typical operating range between -10 V (full enhancement) and 0 V (off state). The IRF9Z24 datasheet specifies ±20 V as the hard limit under all conditions, including transient spikes.

Does IRF9Z24 have a built-in body diode, and what are its key parameters?

Yes, the IRF9Z24 integrates a parasitic body diode inherent to its vertical P-channel MOSFET structure. Key parameters include a forward voltage of -6.3 V at -11 A and 25 °C, reverse recovery time of 100–200 ns, and reverse recovery charge of 0.32–0.64 μC. This diode enables freewheeling current paths in inductive loads, and its characteristics are fully characterized in the IRF9Z24 datasheet under "Drain-Source Body Diode Characteristics".

Can IRF9Z24 be used in parallel configurations, and what design considerations apply?

Yes, the IRF9Z24 is explicitly designed for ease of paralleling, as noted in its features list. To ensure current sharing, use matched gate resistors (R_g), minimize layout asymmetry in source and drain paths, and maintain uniform thermal coupling across devices. The IRF9Z24's positive R_DS(on) temperature coefficient promotes natural current balancing - a key advantage confirmed in Vishay's application guidance for multi-device arrays.

What is the thermal resistance from junction to case (R_thJC) for IRF9Z24, and how does it impact heatsink selection?

The IRF9Z24 has a maximum junction-to-case thermal resistance (R_thJC) of 2.5 °C/W. This value defines the temperature rise from silicon die to the TO-220AB metal tab under full power dissipation. When selecting a heatsink, total thermal resistance (R_thJA) must account for both R_thJC and the case-to-sink (R_thCS = 0.50 °C/W typical) and heatsink-to-ambient (R_thSA) resistances - all referenced in the IRF9Z24 datasheet's Thermal Resistance Ratings table.

Is IRF9Z24 RoHS-compliant, and what does the suffix "-BE3" indicate?

Yes, IRF9Z24PbF-BE3 is RoHS-compliant and halogen-free. The "-BE3" suffix denotes Vishay's lead (Pb)-free and halogen-free packaging per JEDEC J-STD-609, with matte tin plating and no brominated flame retardants. This version replaces legacy Pb-containing variants and meets global environmental compliance requirements without performance trade-offs - as confirmed in the IRF9Z24 ordering information section.