Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9Z24STRR

Name: IRF9Z24STRR
Brand: Vishay Siliconix
SKU: IRF9Z24STRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF9Z24STRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9Z24STRR.pdf

Description:: MOSFET P-CH 60V 11A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,477

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF9Z24STRR from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -60 V drain-source voltage, 0.28 Ω R_DS(on) at V_GS = -10 V, and -11 A continuous drain current at T_C = 25 °C. It delivers fast switching, full avalanche ruggedness, and 175 °C junction operation-used in DC-DC synchronous rectification, motor control H-bridge high-side switches, and industrial power supply OR-ing circuits.

For engineers reviewing the IRF9Z24STRR datasheet, IRF9Z24STRR pinout, IRF9Z24STRR application, or IRF9Z24STRR equivalent, key selection criteria include its -60 V V_DS, low gate charge (19 nC), body diode recovery performance (t_rr = 100–200 ns), thermal resistance (R_thJC = 2.5 °C/W), and D2PAK surface-mount compatibility with high-current PCB layouts.

Technical Context

This device employs Vishay's third-generation silicon process to achieve low on-resistance per die area while maintaining robust avalanche capability (E_AS = 240 mJ). Its P-channel topology enables high-side switching without level-shifting circuitry in buck converters and load-switch applications.

Designed for surface-mount use in thermally demanding environments, the IRF9Z24STRR features a Kelvin-source-compatible D2PAK footprint, supports repetitive avalanche operation (I_AR = -11 A), and exhibits stable threshold voltage (-2.0 to -4.0 V) across temperature for predictable turn-on behavior in overvoltage protection circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Supports input rails up to -48 V in industrial power systems with 20 % safety margin.
R_DS(on) @ V_GS = -10 V	0.28 Ω - Enables ≤ 3.4 W conduction loss at -11 A, suitable for medium-power switching stages.
Q_g max	19 nC - Low gate drive energy reduces controller loading and improves efficiency in 100–500 kHz SMPS designs.
I_D (continuous, T_C = 25 °C)	-11 A - Delivers sufficient current for 12–24 V motor drivers and hot-swap controllers with heatsink mounting.
R_thJC	2.5 °C/W - Allows direct thermal coupling to heatsinks for sustained 60 W power dissipation at T_C = 25 °C.
t_rr (body diode)	100–200 ns - Minimizes reverse-recovery losses during synchronous rectification and freewheeling in half-bridge topologies.
E_AS	240 mJ - Withstands unclamped inductive switching events in relay drivers and solenoid controls without failure.

Pinout & Package

D2PAK (TO-263) package: surface-mount, single-ended heat sink tab (Drain), 3-terminal configuration with exposed metal pad for thermal and electrical connection to PCB ground plane or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 2 (Drain)	High-current output node	Electrically and thermally connected to internal MOSFET drain; must be soldered to large copper pour for thermal management and low-inductance return path.
Pin 1 (Source)	Reference terminal for gate drive and load return	Serves as common reference for V_GS; connects to load ground or negative rail; critical for accurate gate threshold control in high-side configurations.
Pin 3 (Gate)	Control input	Receives logic-level or driver signal; requires <19 nC charge for full enhancement; sensitive to ESD-must be protected with series resistor and/or TVS in layout.

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching without bootstrap capacitors or floating gate drivers in DC-DC converters and battery disconnect circuits.
Fully avalanche rated	Guarantees single-pulse energy handling up to 240 mJ and repetitive avalanche current of -11 A-critical for inductive load snubbing and fault tolerance.
175 °C maximum junction temperature	Supports operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial PLCs) without derating below T_C = 100 °C.
Low Q_gd/Q_gs ratio (11/5.4 ≈ 2.0)	Reduces Miller effect-induced switching oscillation and improves noise immunity during hard commutation in motor drives.
RoHS-compliant, lead-free (PbF)	Meets global environmental compliance requirements; marked "IRF9Z24STRRPbF" per ordering code-no lead contamination risk in reflow assembly.

Applications

Industrial Power Supply OR-ing	DC Motor H-Bridge High-Side Switch
Use Scenario: Parallel redundant 24 V DC power supplies feeding shared bus with automatic fault isolation. IC Role / Device Role / Timing Role: P-channel MOSFET used as ideal diode controller switch, placed between supply output and bus rail. Use Value: Replaces Schottky diodes to eliminate 0.4–0.6 V forward drop, reducing power loss by >60 % and enabling higher efficiency at 10–15 A loads.	Use Scenario: Bidirectional 24 V brushed DC motor control in factory automation actuators. IC Role / Device Role / Timing Role: High-side switch in H-bridge leg, paired with N-channel low-side devices; driven by isolated gate driver. Use Value: Leverages -60 V rating and avalanche ruggedness to withstand back-EMF transients up to -48 V during rapid deceleration or stall conditions.
Hot-Swap Controller Load Switch	Telecom DC-DC Synchronous Rectifier
Use Scenario: Insertion of line cards into live backplane with inrush current limiting and short-circuit protection. IC Role / Device Role / Timing Role: Main pass element controlled by dedicated hot-swap IC (e.g., LTC4211) to manage ramp-up and fault shutdown. Use Value: 0.28 Ω R_DS(on) limits voltage drop to <330 mV at 1.2 A, preserving downstream rail regulation while supporting 100 ms fault clearing.	Use Scenario: Secondary-side synchronous rectification in isolated 48 V to 12 V telecom DC-DC converters operating at 300 kHz. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in forward converter secondary winding. Use Value: Body diode t_rr ≤ 200 ns and low Q_g enable clean zero-voltage switching transitions, improving efficiency by 2–3 % over diode-based designs at full load.

Industrial Power Supply OR-ing

DC Motor H-Bridge High-Side Switch

Use Scenario: Parallel redundant 24 V DC power supplies feeding shared bus with automatic fault isolation.

IC Role / Device Role / Timing Role: P-channel MOSFET used as ideal diode controller switch, placed between supply output and bus rail.

Use Value: Replaces Schottky diodes to eliminate 0.4–0.6 V forward drop, reducing power loss by >60 % and enabling higher efficiency at 10–15 A loads.

Use Scenario: Bidirectional 24 V brushed DC motor control in factory automation actuators.

IC Role / Device Role / Timing Role: High-side switch in H-bridge leg, paired with N-channel low-side devices; driven by isolated gate driver.

Use Value: Leverages -60 V rating and avalanche ruggedness to withstand back-EMF transients up to -48 V during rapid deceleration or stall conditions.

Hot-Swap Controller Load Switch

Telecom DC-DC Synchronous Rectifier

Use Scenario: Insertion of line cards into live backplane with inrush current limiting and short-circuit protection.

IC Role / Device Role / Timing Role: Main pass element controlled by dedicated hot-swap IC (e.g., LTC4211) to manage ramp-up and fault shutdown.

Use Value: 0.28 Ω R_DS(on) limits voltage drop to <330 mV at 1.2 A, preserving downstream rail regulation while supporting 100 ms fault clearing.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V to 12 V telecom DC-DC converters operating at 300 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in forward converter secondary winding.

Use Value: Body diode t_rr ≤ 200 ns and low Q_g enable clean zero-voltage switching transitions, improving efficiency by 2–3 % over diode-based designs at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHF9Z24STRL-GE3	Same silicon die and D2PAK package; identical R_DS(on), Q_g, and avalanche ratings; RoHS-compliant with halogen-free molding compound.	No functional difference; differs only in tape-and-reel packaging (TR vs. TRR) and material compliance (GE3 vs. PbF).	Select SiHF9Z24STRL-GE3 when halogen-free compliance is required or for alternate logistics channel with Vishay's GE3 suffix standard.
IRF9Z24SPbF	Identical electrical specs and D2PAK package; differs only in packaging format (tube vs. tape-and-reel) and part marking; same Pb-free termination.	Functionally interchangeable but not optimized for automated pick-and-place; lacks reel orientation and moisture sensitivity labeling of IRF9Z24STRR.	Choose IRF9Z24SPbF for prototyping or low-volume manual assembly where reel handling is unnecessary.

Compared with IRF9Z24STRR, SiHF9Z24STRL-GE3 offers identical performance with enhanced environmental compliance, while IRF9Z24SPbF provides the same silicon in tube packaging-making IRF9Z24STRR the optimal choice for high-volume SMT production requiring verified tape-and-reel integrity and Pb-free processing.

Availability

IRF9Z24STRR is available at Aetrix Electronics and suitable for industrial power supply OR-ing, DC motor H-bridge high-side switching, and telecom DC-DC synchronous rectification requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF9Z24STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRF9Z24STRR belongs to Vishay's third-generation power MOSFET family, engineered for high-current, high-temperature industrial and telecom power conversion where low R_DS(on), fast switching, and avalanche survivability are essential.

FAQ

What is the maximum continuous drain current rating for IRF9Z24STRR at 100 °C case temperature?

The IRF9Z24STRR supports -7.7 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify PCB copper area and heatsinking to maintain T_C ≤ 100 °C under full load. The IRF9Z24STRR datasheet confirms this value under standard test conditions with proper mounting.

Does IRF9Z24STRR have a built-in body diode, and what are its key parameters?

Yes, the IRF9Z24STRR integrates a parasitic body diode inherent to its vertical P-channel MOSFET structure. Key parameters include a forward voltage V_SD of -6.3 V at I_S = -11 A and T_J = 25 °C, reverse recovery time t_rr of 100–200 ns, and reverse recovery charge Q_rr of 320–640 nC. These values are measured under standardized conditions (IF = -11 A, dI/dt = 100 A/μs) and directly impact performance in freewheeling and synchronous rectification applications. The IRF9Z24STRR body diode is fully rated for repetitive operation.

Is IRF9Z24STRR pin-compatible with IRF9Z24SPbF and SiHF9Z24STRL-GE3?

Yes, IRF9Z24STRR is pin-compatible with both IRF9Z24SPbF and SiHF9Z24STRL-GE3-they share identical D2PAK (TO-263) package outlines, terminal assignments (G-S-D), and mechanical dimensions per JEDEC TO-263AB. No PCB layout changes are required when substituting among these variants. Differences lie solely in packaging format (tape-and-reel vs. tube), material compliance (PbF vs. GE3), and reel-specific logistics markings-not in electrical or mechanical interface. The IRF9Z24STRR footprint matches all three parts exactly.

What is the gate threshold voltage range for IRF9Z24STRR, and how does it affect drive requirements?

The IRF9Z24STRR has a gate threshold voltage V_GS(th) range of -2.0 V to -4.0 V at I_D = -250 μA, meaning it begins conducting significantly between those voltages. Full enhancement occurs at V_GS = -10 V, where R_DS(on) is guaranteed at 0.28 Ω. This wide threshold range necessitates gate drive circuits capable of delivering at least -10 V with sufficient current to charge 19 nC total gate charge rapidly. Logic-level microcontrollers cannot drive IRF9Z24STRR directly; a dedicated gate driver or level shifter is required. The IRF9Z24STRR datasheet specifies these values under standardized test conditions.

Can IRF9Z24STRR be used in avalanche mode, and what are the limits?

Yes, the IRF9Z24STRR is fully avalanche rated for both single-pulse (E_AS = 240 mJ) and repetitive (I_AR = -11 A, E_AR = 6.0 mJ) operation. These ratings assume pulse width limited by junction temperature and are validated per test conditions in Figure 12 (V_DD = -25 V, L = 2.3 mH, R_g = 25 Ω). Designers must ensure peak T_J remains ≤ 175 °C during avalanche events using thermal modeling. The IRF9Z24STRR avalanche capability is intrinsic to its silicon design and does not require external components for basic operation.

IRF9Z24STRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9Z24STRR FAQ

1.How can I place an order for IRF9Z24STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9Z24STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9Z24STRR reliable?

The price and inventory of IRF9Z24STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z24STRR is usually 5 days.

3.What payment methods are accepted for IRF9Z24STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z24STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9Z24STRR?

IRF9Z24STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9Z24STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9Z24STRR?

For technical support, including IRF9Z24STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z24STRR requirements.

6.How does Aetrix verify that IRF9Z24STRR is sourced from the original manufacturer or authorized distributors?

All IRF9Z24STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z24STRR meets industry standards.

7.What is the process for return or replacement of IRF9Z24STRR?

All IRF9Z24STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z24STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9Z24STRR part is unused and in its original packaging.

Return procedure for IRF9Z24STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…