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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB17N60KPBF

Name: IRFB17N60KPBF
Brand: Vishay Siliconix
SKU: IRFB17N60KPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB17N60KPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB17N60KPBF.pdf

Description:: MOSFET N-CH 600V 17A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB17N60KPBF from Vishay Siliconix is a 600 V, 17 A N-channel power MOSFET in TO-220 package with R_DS(on) = 0.35 Ω at V_GS = 10 V, Q_g = 99 nC, and rated for hard-switched SMPS and UPS applications.

For engineers reviewing the IRFB17N60KPBF datasheet, IRFB17N60KPBF pinout, IRFB17N60KPBF application, or IRFB17N60KPBF equivalent, key selection criteria include avalanche energy rating (E_AS = 330 mJ), dV/dt ruggedness (11 V/ns), body diode recovery (t_rr = 520–780 ns), and thermal resistance (R_thJC = 0.37 °C/W).

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage switching with enhanced avalanche robustness and controlled dynamic dV/dt behavior. Its gate charge profile (Q_gs = 32 nC, Q_gd = 47 nC) supports moderate-speed hard-switching while maintaining drive simplicity.

The device integrates a co-packaged body diode characterized for reverse recovery (Q_rr = 5620–9700 nC, t_rr = 520–870 ns across temperature), enabling use in freewheeling and synchronous rectification roles where diode softness and charge control matter.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC bus and universal-input offline SMPS
R_DS(on)	0.35 Ω max at V_GS = 10 V - enables <1.0 W conduction loss at 17 A continuous drain current
Q_g	99 nC max - determines gate driver current requirement (~10 mA avg. for 100 kHz, 10 V swing)
E_AS	330 mJ single-pulse - sustains unclamped inductive turn-off events without failure in UPS or motor drive snubbers
t_rr	520–870 ns - defines minimum dead-time needed to avoid shoot-through in bridge topologies
R_thJC	0.37 °C/W - allows ~900 W dissipation with 330 °C case-to-junction delta under ideal heatsinking
I_D @ T_C = 100 °C	11 A - sets practical continuous current limit in thermally constrained enclosures

Pinout & Package

IRFB17N60KPBF uses a standard through-hole TO-220AB package with isolated tab (drain-connected). Mounting requires flat, greased surface and 10 N·cm torque on M3 screw.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; ±30 V absolute max rating protects against transient overvoltage
D (Drain)	Main power output terminal	Connected to heatsink tab; electrically tied to drain; requires isolation if heatsink is grounded
S (Source)	Power return and reference node	Serves as local ground reference for gate drive; carries full load current and body diode conduction

Key Features

Feature	Design Value
Low gate charge (Q_g = 99 nC)	Reduces gate driver power loss and simplifies discrete or IC-based drive circuitry
High avalanche energy rating (E_AS = 330 mJ)	Enables reliable operation in unclamped inductive switching without external snubbers
Characterized body diode recovery (Q_rr, t_rr)	Supports predictable timing in half-bridge and LLC resonant converter freewheeling paths
Improved dV/dt ruggedness (11 V/ns)	Prevents false turn-on during high dv/dt transients in high-frequency hard-switched converters
RoHS-compliant lead-free termination	Meets global environmental compliance requirements without sacrificing thermal or electrical performance

Applications

Server PSU Primary Switch	Industrial UPS Inverter Stage
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–500 kHz with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 600 V DC link and delivering up to 17 A peak current per phase. Use Value: Low R_DS(on) minimizes conduction loss; characterized C_oss and Q_gd enable precise zero-voltage switching design.	Use Scenario: Online double-conversion UPS delivering clean 230 V AC output during grid failure, with bidirectional inverter/rectifier stages. IC Role / Device Role / Timing Role: Inverter leg switch managing battery-to-AC conversion with repetitive avalanche stress during overload or short-circuit events. Use Value: 330 mJ E_AS and 17 A I_AR ensure survivability during fault conditions without derating.
Motor Drive Snubberless Flyback	Telecom Rectifier Module
Use Scenario: Isolated flyback converter powering auxiliary rails in servo drives, operating with variable load and frequent start-stop cycles. IC Role / Device Role / Timing Role: Main power switch subjected to unclamped inductive energy during MOSFET turn-off due to transformer leakage inductance. Use Value: Single-pulse avalanche rating eliminates need for RC snubber, reducing BOM count and board space.	Use Scenario: 48 V telecom rectifier module converting -48 V DC input to multiple isolated DC outputs for base station equipment. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in forward-derived topologies requiring high dV/dt immunity. Use Value: 11 V/ns dV/dt rating prevents spurious turn-on during fast voltage transitions in noisy telecom environments.

Server PSU Primary Switch

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–500 kHz with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 600 V DC link and delivering up to 17 A peak current per phase.

Use Value: Low R_DS(on) minimizes conduction loss; characterized C_oss and Q_gd enable precise zero-voltage switching design.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output during grid failure, with bidirectional inverter/rectifier stages.

IC Role / Device Role / Timing Role: Inverter leg switch managing battery-to-AC conversion with repetitive avalanche stress during overload or short-circuit events.

Use Value: 330 mJ E_AS and 17 A I_AR ensure survivability during fault conditions without derating.

Motor Drive Snubberless Flyback

Telecom Rectifier Module

Use Scenario: Isolated flyback converter powering auxiliary rails in servo drives, operating with variable load and frequent start-stop cycles.

IC Role / Device Role / Timing Role: Main power switch subjected to unclamped inductive energy during MOSFET turn-off due to transformer leakage inductance.

Use Value: Single-pulse avalanche rating eliminates need for RC snubber, reducing BOM count and board space.

Use Scenario: 48 V telecom rectifier module converting -48 V DC input to multiple isolated DC outputs for base station equipment.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in forward-derived topologies requiring high dV/dt immunity.

Use Value: 11 V/ns dV/dt rating prevents spurious turn-on during fast voltage transitions in noisy telecom environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP17NK60ZFP	600 V, 16 A, R_DS(on) = 0.38 Ω, Q_g = 85 nC, Zener-protected gate	Lower Q_g but higher R_DS(on); less avalanche energy (E_AS = 220 mJ)	Preferred where gate drive simplicity is critical and avalanche stress is limited
FQP17N60C	600 V, 17 A, R_DS(on) = 0.35 Ω, Q_g = 105 nC, no specified E_AS	Same R_DS(on) and current rating, but lacks published avalanche specs and dV/dt validation	Acceptable for non-fault-tolerant designs with external protection

Compared with STP17NK60ZFP and FQP17N60C, IRFB17N60KPBF offers superior avalanche ruggedness and validated dV/dt immunity-critical for industrial UPS and telecom rectifiers where fault transients are routine and layout parasitics cannot be fully eliminated.

Availability

IRFB17N60KPBF is available at Aetrix Electronics and suitable for server power supplies, industrial uninterruptible power systems, and telecom rectifier modules requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFB17N60KPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific characterization.

The IRFB17N60KPBF belongs to Vishay's "K" series of high-voltage power MOSFETs engineered for demanding hard-switched and high-frequency power conversion where avalanche capability, dynamic ruggedness, and thermal performance are essential.

FAQ

What is the maximum continuous drain current for IRFB17N60KPBF at 100 °C case temperature?

The IRFB17N60KPBF supports 11 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits under real-world heatsink conditions and ensures safe junction temperature operation below 150 °C.

Does IRFB17N60KPBF have a fully characterized body diode?

Yes, IRFB17N60KPBF includes full body diode specifications: V_SD = 1.5 V at 17 A, t_rr = 520–870 ns, and Q_rr = 5620–9700 nC across 25–125 °C. These parameters are measured and published, enabling accurate dead-time and loss modeling in bridge circuits.

Is IRFB17N60KPBF RoHS-compliant and lead-free?

Yes, IRFB17N60KPBF is RoHS-compliant and manufactured with lead-free terminations (Pb-free), as confirmed in the Ordering Information section and marked by the "PbF" suffix. It meets EU RoHS Directive 2011/65/EU without exemptions.

What is the typical input capacitance (C_iss) of IRFB17N60KPBF and how does it affect gate drive design?

The typical input capacitance C_iss of IRFB17N60KPBF is 2700 pF at V_DS = 25 V. This value, combined with Q_g = 99 nC, informs gate resistor selection to balance switching speed and EMI; e.g., a 10 Ω gate resistor yields ~100 ns effective rise time under 10 V drive.

Can IRFB17N60KPBF replace IRFP460 in existing designs?

IRFB17N60KPBF is not a direct replacement for IRFP460: although both are 500–600 V TO-220 MOSFETs, IRFP460 has higher R_DS(on) (0.27 Ω) but lower voltage rating (500 V), different Q_g (180 nC), and no published E_AS or dV/dt data. Redesign validation is required before substitution.

IRFB17N60KPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 420mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 99 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 340W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB17N60KPBF FAQ

1.How can I place an order for IRFB17N60KPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB17N60KPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB17N60KPBF reliable?

The price and inventory of IRFB17N60KPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB17N60KPBF is usually 5 days.

3.What payment methods are accepted for IRFB17N60KPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB17N60KPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB17N60KPBF?

IRFB17N60KPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB17N60KPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB17N60KPBF?

For technical support, including IRFB17N60KPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB17N60KPBF requirements.

6.How does Aetrix verify that IRFB17N60KPBF is sourced from the original manufacturer or authorized distributors?

All IRFB17N60KPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB17N60KPBF meets industry standards.

7.What is the process for return or replacement of IRFB17N60KPBF?

All IRFB17N60KPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB17N60KPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB17N60KPBF part is unused and in its original packaging.

Return procedure for IRFB17N60KPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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