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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB18N50K

Name: IRFB18N50K
Brand: Vishay Siliconix
SKU: IRFB18N50K
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB18N50K

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB18N50K.pdf

Description:: MOSFET N-CH 500V 17A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB18N50K from Vishay Siliconix is a 500 V, 17 A N-channel power MOSFET in TO-220AB package, featuring 0.26 Ω R_DS(on) at V_GS = 10 V, 120 nC total gate charge, and 370 mJ single-pulse avalanche energy - designed for hard-switched SMPS and UPS output stages.

For engineers reviewing the IRFB18N50K datasheet, IRFB18N50K pinout, IRFB18N50K application, or IRFB18N50K equivalent, key selection criteria include its 500 V blocking rating, low Q_g/Q_gd ratio for fast switching with reduced Miller effect, and validated dV/dt ruggedness up to 7.8 V/ns in high-frequency power conversion.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage unclamped inductive switching. Its gate structure delivers stable V_GS(th) (3.0–5.0 V) and low input capacitance (C_iss = 2830 pF), enabling robust drive with standard gate drivers.

Thermal design is supported by R_thJC = 0.56 °C/W and maximum P_D = 220 W at T_C = 25 °C. Avalanche capability is fully characterized per JEDEC JESD24-11, with E_AS = 370 mJ at I_AS = 17 A and L = 2.5 mH.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in 400 V DC bus systems with 25 % voltage margin
R_DS(on)	0.26 Ω max at V_GS = 10 V, I_D = 10 A - enables <1.3 W conduction loss at 17 A continuous operation
Q_g	120 nC max - determines gate driver current requirement (~1.6 A peak for 75 ns turn-on with 7.5 Ω R_G)
E_AS	370 mJ single-pulse - sustains unclamped inductive energy without failure in flyback or LLC resonant converters
dV/dt rating	7.8 V/ns - ensures reliable operation during fast voltage transients in hard-switched topologies
I_D (T_C = 100 °C)	11 A - defines usable current derating for heatsink-limited thermal designs
C_oss eff.	155 pF - directly impacts turn-off loss and snubber sizing in ZVS/ZCS circuits

Pinout & Package

IRFB18N50K is housed in a TO-220AB package with isolated tab (drain-connected), standard mounting hole, and 6.35 mm lead pitch. Thermal resistance from junction to case is 0.56 °C/W, requiring mechanical clamping torque of 10 N·cm for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and thermal interface	Electrically connected to metal tab; requires insulating washer if mounted to grounded heatsink
Gate	Control terminal for channel modulation	Low-input-capacitance node (C_iss = 2830 pF); sensitive to ESD and ringing - needs local RC snubber
Source	Reference node for gate drive and current sensing	Common return path for load current and body diode conduction; critical for Kelvin source layout in high-di/dt designs

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio (120/54 nC)	Reduces Miller plateau duration and improves immunity to false turn-on during high dV/dt transitions
Fully characterized avalanche performance	Enables elimination of external clamping circuits in cost-sensitive SMPS designs without compromising reliability
Enhanced dynamic dV/dt ruggedness	Validated to 7.8 V/ns - supports stable operation in >200 kHz hard-switched converters with minimal gate drive margin
Low R_DS(on) × Q_g figure-of-merit (31.2 Ω·nC)	Optimizes trade-off between conduction and switching losses in medium-frequency power stages
Body diode t_rr = 520–780 ns	Minimizes reverse recovery loss and associated EMI in synchronous rectification and freewheeling applications

Applications

Server PSU Primary Switch	Industrial UPS Inverter Stage
Use Scenario: High-efficiency 3.3 kW telecom rectifier operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switch handling 400 V DC input and delivering regulated 12 V output via transformer isolation. Use Value: 500 V rating provides headroom for 480 VAC surge events; 0.26 Ω R_DS(on) limits conduction loss to <1.5 W at full load.	Use Scenario: 10 kVA double-conversion UPS inverter driving three-phase motor loads with regenerative braking. IC Role / Device Role / Timing Role: High-side switching element in IGBT-driven H-bridge with bidirectional energy flow. Use Value: 370 mJ E_AS withstands inductive kickback during rapid load disconnection without snubber redesign.
EV Onboard Charger PFC Stage	High-Frequency Induction Heater
Use Scenario: Boost PFC front-end in 6.6 kW OBC converting 230 VAC to 400 VDC at 70 kHz. IC Role / Device Role / Timing Role: Fast-switching boost switch managing 20 A peak inductor current with zero-voltage switching assist. Use Value: Low C_oss eff. (155 pF) reduces turn-off loss and enables efficient ZVS transition across full load range.	Use Scenario: 200 kHz resonant inverter supplying 5 kW to induction coil in metal hardening system. IC Role / Device Role / Timing Role: Half-bridge switching device subjected to repetitive 500 V, 30 A square-wave stress. Use Value: Validated 7.8 V/ns dV/dt rating prevents spurious turn-on during rapid voltage reversal in resonant tank.

Server PSU Primary Switch

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 3.3 kW telecom rectifier operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch handling 400 V DC input and delivering regulated 12 V output via transformer isolation.

Use Value: 500 V rating provides headroom for 480 VAC surge events; 0.26 Ω R_DS(on) limits conduction loss to <1.5 W at full load.

Use Scenario: 10 kVA double-conversion UPS inverter driving three-phase motor loads with regenerative braking.

IC Role / Device Role / Timing Role: High-side switching element in IGBT-driven H-bridge with bidirectional energy flow.

Use Value: 370 mJ E_AS withstands inductive kickback during rapid load disconnection without snubber redesign.

EV Onboard Charger PFC Stage

High-Frequency Induction Heater

Use Scenario: Boost PFC front-end in 6.6 kW OBC converting 230 VAC to 400 VDC at 70 kHz.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 20 A peak inductor current with zero-voltage switching assist.

Use Value: Low C_oss eff. (155 pF) reduces turn-off loss and enables efficient ZVS transition across full load range.

Use Scenario: 200 kHz resonant inverter supplying 5 kW to induction coil in metal hardening system.

IC Role / Device Role / Timing Role: Half-bridge switching device subjected to repetitive 500 V, 30 A square-wave stress.

Use Value: Validated 7.8 V/ns dV/dt rating prevents spurious turn-on during rapid voltage reversal in resonant tank.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18NM50FP	500 V, 18 A, R_DS(on) = 0.29 Ω, Q_g = 95 nC, TO-220FP package (full-pack)	Lower gate charge but higher R_DS(on); smaller thermal pad area limits power dissipation to 130 W	Preferable where gate drive strength is constrained but thermal budget allows higher on-resistance
IXTH16N50L	500 V, 16 A, R_DS(on) = 0.32 Ω, Q_g = 72 nC, TO-247 package	Lower Q_g and superior thermal performance (R_thJC = 0.45 °C/W), but larger footprint and higher cost	Preferred for high-reliability industrial inverters requiring extended thermal margin and lower switching loss

Compared with STP18NM50FP and IXTH16N50L, the IRFB18N50K offers the best balance of low R_DS(on), proven avalanche robustness, and TO-220AB mechanical compatibility - making it ideal for volume SMPS designs where thermal management uses standard clip-on heatsinks.

Availability

IRFB18N50K is available at Aetrix Electronics and suitable for switch mode power supply (SMPS), uninterruptible power supply (UPS), and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRFB18N50K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The IRFB18N50K belongs to Vishay's high-voltage TrenchFET® Gen IV family, engineered specifically for demanding hard-switched and resonant power conversion systems operating up to 500 V.

FAQ

What is the maximum continuous drain current for IRFB18N50K at 100 °C case temperature?

The IRFB18N50K supports 11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be verified against actual heatsink performance and ambient conditions in the final design. The IRFB18N50K datasheet confirms this value under linear derating factor of 1.8 W/°C beyond 25 °C.

Does IRFB18N50K have a built-in body diode, and what are its key parameters?

Yes, the IRFB18N50K integrates a monolithic body diode with typical forward voltage V_SD = 1.5 V at I_S = 17 A and T_J = 25 °C. Its reverse recovery time t_rr is 520–780 ns, and Q_rr is 5.3–8.0 μC under standardized test conditions (I_F = 17 A, dI/dt = 100 A/μs). These values are measured and published in the IRFB18N50K specifications table.

Is IRFB18N50K RoHS-compliant, and what does the 'PbF' suffix indicate?

The ordering variant IRFB18N50KPbF is lead (Pb)-free and RoHS-compliant, as confirmed in the Vishay datasheet S21-0340-Rev. B. The 'PbF' suffix explicitly denotes lead-free termination, meeting EU RoHS Directive 2011/65/EU requirements. The IRFB18N50K base part number refers to the same die and package, with compliance status determined by the suffix.

What is the gate threshold voltage range for IRFB18N50K, and how does it affect drive circuit design?

The IRFB18N50K has a gate-source threshold voltage V_GS(th) ranging from 3.0 V to 5.0 V at I_D = 250 μA, ensuring reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction near 5 V logic levels. This range is tightly controlled and verified per the IRFB18N50K datasheet, supporting robust noise margin in industrial environments.

Can IRFB18N50K be used in avalanche-mode operation, and what energy level is guaranteed?

Yes, the IRFB18N50K is fully characterized for repetitive and single-pulse avalanche operation. It guarantees 370 mJ single-pulse avalanche energy (E_AS) and 22 mJ repetitive avalanche energy (E_AR) under defined test conditions (L = 2.5 mH, I_AS = 17 A). These values are measured and documented in the IRFB18N50K Absolute Maximum Ratings section.

IRFB18N50K Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2830 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 220W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB18N50K FAQ

1.How can I place an order for IRFB18N50K through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB18N50K on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB18N50K reliable?

The price and inventory of IRFB18N50K are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB18N50K is usually 5 days.

3.What payment methods are accepted for IRFB18N50K?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB18N50K transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB18N50K?

IRFB18N50K orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB18N50K order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB18N50K?

For technical support, including IRFB18N50K datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB18N50K requirements.

6.How does Aetrix verify that IRFB18N50K is sourced from the original manufacturer or authorized distributors?

All IRFB18N50K products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB18N50K meets industry standards.

7.What is the process for return or replacement of IRFB18N50K?

All IRFB18N50K units undergo pre-shipment inspection (PSI). If there is an issue with IRFB18N50K, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB18N50K part is unused and in its original packaging.

Return procedure for IRFB18N50K:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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