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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB18N50KPBF

Name: IRFB18N50KPBF
Brand: Vishay Siliconix
SKU: IRFB18N50KPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB18N50KPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB18N50KPBF.pdf

Description:: MOSFET N-CH 500V 17A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB18N50KPBF from Vishay Siliconix is a 500 V, 17 A N-channel power MOSFET in TO-220AB package, featuring 0.26 Ω R_DS(on) at V_GS = 10 V, 120 nC total gate charge, and 370 mJ single-pulse avalanche energy-designed for high-voltage hard-switched SMPS and UPS output stages.

For engineers reviewing the IRFB18N50KPBF datasheet, IRFB18N50KPBF pinout, IRFB18N50KPBF application, or IRFB18N50KPBF equivalent, key selection criteria include its 500 V blocking rating, low gate charge for simplified gate drive, robust avalanche capability, and thermal resistance of 0.56 °C/W junction-to-case-critical for high-reliability industrial power conversion designs.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage switching with controlled dV/dt immunity and characterized dynamic parameters. Its gate threshold voltage (3.0–5.0 V) and low Q_gd/Q_g ratio (54/120 nC) support stable operation under fast transient load conditions.

The device integrates a co-packaged body diode with 520–780 ns reverse recovery time and 5.3–8.0 μC Q_rr, enabling reliable freewheeling in flyback and LLC resonant topologies without external snubbing in many cases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in 400 V DC bus systems with 25 % margin
R_DS(on)	0.26 Ω max at V_GS = 10 V - enables <1.3 W conduction loss at 20 A RMS in continuous conduction mode
Q_g	120 nC max - determines gate driver current requirement (~1.6 A peak for 75 ns turn-on with 10 V swing)
E_AS	370 mJ single-pulse - withstands unclamped inductive energy during startup/fault without failure
R_thJC	0.56 °C/W - allows 220 W dissipation with ≤125 °C case temperature rise above heatsink
I_D (T_C = 100 °C)	11 A - defines safe continuous current limit when mounted on standard TO-220 heatsink
dV/dt rating	7.8 V/ns - ensures immunity to parasitic turn-on in high-dI/dt half-bridge configurations

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.6 mm creepage distance, and 10 N·cm screw torque rating.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 34 nC Q_gs and 54 nC Q_gd define Miller plateau duration and switching transition control
D (Drain)	High-side power terminal	Connected to heatsink tab; carries full load current and withstands 500 V transients; requires isolation per safety standards
S (Source)	Reference node	Return path for load current and gate drive loop; critical for minimizing common-source inductance in high-frequency layouts

Key Features

Feature	Design Value
Low Q_g	120 nC total gate charge reduces gate driver power loss and simplifies discrete or IC-based drive design
Characterized C_oss eff.	155 pF effective output capacitance enables accurate soft-switching timing prediction in resonant converters
Avalanche ruggedness	370 mJ single-pulse E_AS and 22 mJ repetitive EAR allow operation without external clamping in many flyback designs
Body diode Q_rr	5.3–8.0 μC reverse recovery charge minimizes switching loss and EMI during synchronous rectification transitions
Thermal performance	0.56 °C/W R_thJC supports high-power density layouts with minimal heatsink mass

Applications

Server PSU Primary Switch	Industrial UPS Inverter Stage
Use Scenario: High-efficiency 3.3 kW telecom rectifier operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switch handling 400 V DC input, conducting 17 A peak, and sustaining 500 V blocking during reset. Use Value: 0.26 Ω R_DS(on) limits conduction loss to <0.75 W at full load; 370 mJ E_AS eliminates need for external RCD clamp.	Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 480 V DC bus during grid outage. IC Role / Device Role / Timing Role: Half-bridge leg switch in three-phase IGBT/MOSFET inverter stage, switching at 8–16 kHz. Use Value: 7.8 V/ns dV/dt rating prevents false triggering; 11 A continuous current at 100 °C supports derated 95 % duty-cycle operation.
EV Charger DC-DC Isolation Stage	Medical Imaging Power Supply
Use Scenario: 1.5 kW isolated DC-DC converter stepping down 800 V battery to 48 V for auxiliary systems in Level 3 EV chargers. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with ZVS operation. Use Value: Low C_oss eff. (155 pF) enables reliable zero-voltage switching down to 50 kHz; 120 nC Q_g permits use of low-cost gate drivers.	Use Scenario: Compact 500 W X-ray generator supply requiring ultra-low EMI and >99.99 % uptime in diagnostic imaging equipment. IC Role / Device Role / Timing Role: High-side switch in resonant LLC tank driving high-voltage transformer primary. Use Value: Characterized Q_rr (5.3–8.0 μC) and tight V_GS(th) (3.0–5.0 V) ensure predictable dead-time control and reduced shoot-through risk.

Server PSU Primary Switch

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 3.3 kW telecom rectifier operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch handling 400 V DC input, conducting 17 A peak, and sustaining 500 V blocking during reset.

Use Value: 0.26 Ω R_DS(on) limits conduction loss to <0.75 W at full load; 370 mJ E_AS eliminates need for external RCD clamp.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 480 V DC bus during grid outage.

IC Role / Device Role / Timing Role: Half-bridge leg switch in three-phase IGBT/MOSFET inverter stage, switching at 8–16 kHz.

Use Value: 7.8 V/ns dV/dt rating prevents false triggering; 11 A continuous current at 100 °C supports derated 95 % duty-cycle operation.

EV Charger DC-DC Isolation Stage

Medical Imaging Power Supply

Use Scenario: 1.5 kW isolated DC-DC converter stepping down 800 V battery to 48 V for auxiliary systems in Level 3 EV chargers.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with ZVS operation.

Use Value: Low C_oss eff. (155 pF) enables reliable zero-voltage switching down to 50 kHz; 120 nC Q_g permits use of low-cost gate drivers.

Use Scenario: Compact 500 W X-ray generator supply requiring ultra-low EMI and >99.99 % uptime in diagnostic imaging equipment.

IC Role / Device Role / Timing Role: High-side switch in resonant LLC tank driving high-voltage transformer primary.

Use Value: Characterized Q_rr (5.3–8.0 μC) and tight V_GS(th) (3.0–5.0 V) ensure predictable dead-time control and reduced shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18N50M5	500 V, 18 A, R_DS(on) = 0.22 Ω, Q_g = 95 nC, TO-220FP package (isolated drain)	Lower gate charge improves efficiency in high-frequency SMPS but reduced avalanche energy (220 mJ vs. 370 mJ)	Prefer STP18N50M5 for 200+ kHz designs where gate drive loss dominates; retain IRFB18N50KPBF for fault-prone UPS/industrial environments needing higher E_AS
FDPF18N50	500 V, 18 A, R_DS(on) = 0.24 Ω, Q_g = 110 nC, TO-220F package (non-isolated drain)	Non-isolated tab requires insulating washer; slightly lower R_DS(on) but no specified dV/dt rating	Select FDPF18N50 only when heatsink isolation is handled externally; IRFB18N50KPBF preferred where creepage/safety certification is required out-of-box

Compared with STP18N50M5 and FDPF18N50, the IRFB18N50KPBF offers superior avalanche ruggedness and guaranteed dV/dt immunity-making it the most suitable choice for mission-critical industrial power systems where reliability under overvoltage stress is non-negotiable.

Availability

IRFB18N50KPBF is available at Aetrix Electronics and suitable for server power supplies, industrial uninterruptible power systems, and medical-grade DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRFB18N50KPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q101 qualified processes.

The IRFB18N50KPBF belongs to Vishay's high-voltage TrenchFET® Gen IV family, engineered specifically for ruggedized industrial and telecom power conversion where sustained avalanche performance and thermal stability are mandatory.

FAQ

What is the maximum continuous drain current for IRFB18N50KPBF at 100 °C case temperature?

The IRFB18N50KPBF supports 11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and must be validated against actual heatsink performance and ambient conditions in the final layout. The IRFB18N50KPBF datasheet confirms this value applies under steady-state conduction with proper mounting torque (10 N·cm) and greased interface.

Does IRFB18N50KPBF have an isolated drain tab in the TO-220AB package?

Yes, the IRFB18N50KPBF uses a TO-220AB package with electrically isolated drain tab-verified by Vishay's mechanical drawings and mounting instructions. This isolation allows direct heatsink attachment without additional insulating hardware, simplifying thermal design while maintaining safety clearance. The IRFB18N50KPBF datasheet explicitly references "isolated tab" in the package diagram and ordering information section.

What is the typical reverse recovery charge (Q_rr) of the body diode in IRFB18N50KPBF?

The IRFB18N50KPBF body diode exhibits a typical reverse recovery charge (Q_rr) of 5.3–8.0 μC, measured at T_J = 25 °C, I_F = 17 A, and dI/dt = 100 A/μs. This parameter is fully characterized in the datasheet's Drain-Source Body Diode Characteristics table and directly impacts switching loss and EMI in hard-switched topologies. Designers must account for this Q_rr when selecting gate resistors and dead-time in half-bridge configurations using the IRFB18N50KPBF.

Can IRFB18N50KPBF operate reliably in avalanche mode during inductive turn-off events?

Yes, the IRFB18N50KPBF is fully rated for repetitive avalanche operation with 22 mJ E_AR and 17 A I_AR, and single-pulse capability up to 370 mJ E_AS. These values are measured per JEDEC JESD24-11 and documented in the Absolute Maximum Ratings table. The IRFB18N50KPBF datasheet includes test circuit diagrams (Fig. 12a–c) confirming its suitability for unclamped inductive switching in flyback and forward converters without external protection.

What is the gate-source threshold voltage range for IRFB18N50KPBF?

The IRFB18N50KPBF has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V, tested at V_DS = V_GS and I_D = 250 μA. This specification ensures consistent turn-on behavior across temperature and process variation, supporting robust gate drive design in industrial environments. The IRFB18N50KPBF datasheet lists this parameter in the Static Characteristics table with explicit test conditions and min/typ/max values.

IRFB18N50KPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2830 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 220W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB18N50KPBF FAQ

1.How can I place an order for IRFB18N50KPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB18N50KPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB18N50KPBF reliable?

The price and inventory of IRFB18N50KPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB18N50KPBF is usually 5 days.

3.What payment methods are accepted for IRFB18N50KPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB18N50KPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB18N50KPBF?

IRFB18N50KPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB18N50KPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB18N50KPBF?

For technical support, including IRFB18N50KPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB18N50KPBF requirements.

6.How does Aetrix verify that IRFB18N50KPBF is sourced from the original manufacturer or authorized distributors?

All IRFB18N50KPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB18N50KPBF meets industry standards.

7.What is the process for return or replacement of IRFB18N50KPBF?

All IRFB18N50KPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB18N50KPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB18N50KPBF part is unused and in its original packaging.

Return procedure for IRFB18N50KPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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