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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB3307PBF

Name: IRFB3307PBF
Brand: Infineon Technologies
SKU: IRFB3307PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB3307PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB3307PBF.pdf

Description:: MOSFET N-CH 75V 130A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB3307PBF from Infineon Technologies (formerly International Rectifier) is a 75V, 120A N-channel enhancement-mode HEXFET Power MOSFET in TO-262 (I²PAK) package, optimized for high-frequency hard-switched and synchronous rectification applications with R_DS(on) typ. 5.0 mΩ, Q_g 120 nC, and enhanced body diode dV/dt ruggedness up to 11 V/ns. It serves as the primary switching element in high-efficiency SMPS output stages and UPS inverters.

For engineers reviewing the IRFB3307PBF datasheet, IRFB3307PBF pinout, IRFB3307PBF application, or IRFB3307PBF equivalent, key selection criteria include its 75V V_(BR)DSS, low 0.61°C/W R_θJC, 130A body diode continuous current capability, and validated unclamped inductive avalanche performance up to 510 mJ at T_J = 25°C.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized gate oxide thickness and die attach for improved dynamic dV/dt immunity and avalanche energy handling. Its low C_{oss eff.(TR)} of 700 pF and C_iss of 5150 pF support fast switching in 100–500 kHz SMPS topologies while maintaining EMI control.

The intrinsic body diode features t_rr of 38–57 ns and Q_rr of 65–98 nC at T_J = 25°C, enabling reliable synchronous rectification without external Schottky supplementation in medium-power DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	75 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48V-input SMPS and UPS systems.
R_DS(on) typ.	5.0 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1.2 W conduction loss at 75 A, critical for thermal management in compact power modules.
Q_g	120 nC max - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers at ≤300 kHz switching.
I_D cont. @ T_C = 100°C	84 A - Real-world continuous current rating under industrial ambient conditions; defines heatsink sizing for sustained operation.
E_AS	510 mJ - Single-pulse avalanche energy rating; supports robustness against inductive turn-off transients in motor drives and UPS H-bridges.
t_rr	38–57 ns - Body diode reverse recovery time; enables efficient synchronous rectification in forward/flyback converters without excessive ringing.
R_θJC	0.61 °C/W - Junction-to-case thermal resistance; allows direct mounting to heatsinks with minimal thermal interface resistance penalty.

Pinout & Package

IRFB3307PBF uses the TO-262 (I²PAK) surface-mount-compatible package with isolated drain tab, featuring three terminals: Drain (D), Source (S), and Gate (G). The drain connects directly to the exposed metal tab for low-inductance, high-current path routing and thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and thermal interface	Electrically connected to internal die drain; must be electrically isolated from PCB ground plane unless system topology requires common-drain configuration.
Source	Reference node for gate drive and current sensing	Serves as return path for load current and reference for gate-source voltage; low-inductance layout essential for stable switching.
Gate	Control terminal for channel modulation	High-impedance input requiring controlled slew rate; susceptible to noise coupling-requires local RC snubber or gate resistor ≥3.9 Ω for dV/dt immunity.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	510 mJ single-pulse E_AS with full characterization per JEDEC JESD24-11; eliminates need for external clamping in unclamped inductive switching.
Optimized body diode dV/dt immunity	11 V/ns rated dv/dt during diode recovery; prevents spurious turn-on in high-dV/dt environments like LLC resonant converters.
Low effective output capacitance	C_{oss eff.(TR)} = 700 pF - Reduces switching loss during zero-voltage transition (ZVT) and improves efficiency in soft-switching topologies.
Thermally robust die attach	R_θJC end-of-life = 0.75°C/W after 1000 thermal cycles (−55°C to +150°C); ensures long-term thermal performance stability in automotive and industrial deployments.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020D reflow profile; qualified for Pb-free assembly without solder joint reliability degradation.

Applications

Server VRM Output Stage

Industrial UPS Inverter

Use Scenario: High-current, high-efficiency buck converter delivering 12 V/100 A to CPU/GPU cores in datacenter servers.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch operating at 300–500 kHz with forced PWM control and precise dead-time management.

Use Value: 5.0 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 8 mΩ devices, enabling higher power density and lower heatsink mass.

Use Scenario: Half-bridge inverter stage converting 48 V DC battery bank to 230 V AC for critical backup power in factory automation systems.

IC Role / Device Role / Timing Role: High-side switching device in hard-switched H-bridge with unclamped inductive loads and frequent overload transients.

Use Value: 510 mJ E_AS rating withstands repeated short-circuit events without failure, eliminating need for external IGBT-based protection circuits.

Telecom DC-DC Brick

EV Onboard Charger PFC Stage

Use Scenario: Isolated forward converter in 48 V telecom power supply delivering 3.3 V/60 A to baseband processing units.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with body diode conducting during dead time and MOSFET conducting during active phase.

Use Value: 38 ns t_rr minimizes reverse recovery loss and EMI generation, allowing compliance with EN55022 Class B conducted emissions limits.

Use Scenario: Boost switch in two-stage OBC PFC front-end handling 6.6 kW input from 240 V AC grid.

IC Role / Device Role / Timing Role: Fast-switching boost transistor operating at 100 kHz with high duty-cycle variation across line/load conditions.

Use Value: 120 nC Q_g enables use of cost-effective 2 A gate drivers while maintaining <50 ns turn-on delay, improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 75V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N75F7	75 V, 120 A, R_DS(on) = 4.8 mΩ, Q_g = 105 nC, DFN8 5×6 mm package	Surface-mount only; no isolated drain tab; requires PCB copper area for thermal dissipation instead of mechanical heatsink	Preferred for space-constrained, fully SMT designs where thermal interface via heatsink is impractical.
IXFH120N075	75 V, 120 A, R_DS(on) = 5.2 mΩ, Q_g = 135 nC, TO-247AC package	Larger TO-247 footprint; higher R_θJC = 0.75°C/W; superior creepage/clearance for high-voltage isolation	Better suited for high-isolation industrial inverters where safety spacing exceeds TO-262 capabilities.

Compared with STL120N75F7 and IXFH120N075, IRFB3307PBF offers the optimal balance of thermal performance (0.61°C/W), ruggedness (510 mJ E_AS), and through-hole compatibility-making it ideal for field-serviceable, heatsink-mounted industrial power supplies where mechanical robustness and repairability are prioritized.

Availability

IRFB3307PBF is available at Aetrix Electronics and suitable for high-reliability server VRMs, industrial UPS inverters, telecom DC-DC bricks, and EV onboard charger PFC stages requiring stable component supply and long-lifecycle support.

Supply support for IRFB3307PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

IRFB3307PBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-ruggedness switching in industrial, telecom, and computing power conversion systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFB3307PBF supports 84 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This rating reflects thermal limitation-not package or silicon current saturation-and assumes proper heatsinking with R_θJC = 0.61°C/W and ambient airflow meeting industrial derating curves.

Does IRFB3307PBF have a fully characterized avalanche SOA?

Yes-Infineon provides full unclamped inductive avalanche characterization including E_AS = 510 mJ (T_J = 25°C), I_AR = 75 A, and EAR curves versus temperature and pulse width in Figures 12 and 15. These data are measured per JEDEC JESD24-11 and validated across production lots.

Can IRFB3307PBF be used as a synchronous rectifier in a 48 V to 12 V LLC resonant converter?

Yes-its 38 ns t_rr, 11 V/ns dV/dt rating, and low Q_rr (65 nC) make it suitable for synchronous rectification in LLC secondaries. Gate timing must ensure body diode conduction only during dead time, and layout must minimize source inductance to prevent shoot-through during fast transitions.

Is the TO-262 package lead-free and RoHS-compliant?

Yes-IRFB3307PBF is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU. It meets IPC/JEDEC J-STD-020D moisture sensitivity level 1 and supports standard Pb-free reflow profiles up to 260°C peak temperature.

IRFB3307PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5150 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB3307PBF FAQ

1.How can I place an order for IRFB3307PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB3307PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB3307PBF reliable?

The price and inventory of IRFB3307PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB3307PBF is usually 5 days.

3.What payment methods are accepted for IRFB3307PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB3307PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB3307PBF?

IRFB3307PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB3307PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB3307PBF?

For technical support, including IRFB3307PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB3307PBF requirements.

6.How does Aetrix verify that IRFB3307PBF is sourced from the original manufacturer or authorized distributors?

All IRFB3307PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB3307PBF meets industry standards.

7.What is the process for return or replacement of IRFB3307PBF?

All IRFB3307PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB3307PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB3307PBF part is unused and in its original packaging.

Return procedure for IRFB3307PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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