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Infineon Technologies IRFB7537PBF
- Part No.:
- IRFB7537PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFB7537PBF.pdf
- Description:
- MOSFET N-CH 60V 173A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,801
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Product details
Overview
IRFB7537PBF from Infineon Technologies (formerly International Rectifier) is a 60V, 173A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-current switching in motor drives and DC/DC converters. It delivers typ. RDS(on) of 2.75 mΩ at VGS = 10 V, supports 700 A pulsed drain current, and features enhanced body diode dV/dt capability up to 10 V/ns at TJ = 175°C - enabling robust synchronous rectification in resonant topologies.
For engineers reviewing the IRFB7537PBF datasheet, IRFB7537PBF pinout, IRFB7537PBF application, or IRFB7537PBF equivalent, key selection criteria include its 230 W power dissipation at TC = 25°C, fully characterized avalanche SOA (EAS = 270 mJ), and gate charge profile (Qg = 142 nC typ.) critical for high-frequency half-bridge design.
Technical Context
This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted charge balancing to achieve low RDS(on) × Qg figure-of-merit (≈387 Ω·nC). Its body diode exhibits trr = 39 ns and Qrr = 46 nC at TJ = 25°C, enabling fast recovery in OR-ing and BLDC commutation.
The device is rated for continuous operation up to TJ = 175°C with RθJC = 0.65 °C/W, and its avalanche ruggedness is validated per unclamped inductive test (UIS) with IAS = 100 A, L = 54 µH, and EAS = 270 mJ - confirming suitability for hard-switched industrial power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 48 V bus systems with 20% margin against transients. |
| RDS(on) typ. | 2.75 mΩ at VGS = 10 V, ID = 100 A - Enables <1.5 W conduction loss at 100 A, reducing heatsink requirements. |
| ID cont. | 173 A at TC = 25°C - Supports high-power motor drive inverters without paralleling. |
| Qg typ. | 142 nC - Determines gate driver peak current demand (~2.8 A for 50 ns turn-on with 2.7 Ω gate resistor). |
| EAS | 270 mJ - Specifies single-pulse avalanche energy handling for inductive load switching without snubbers. |
| trr | 39 ns at TJ = 25°C - Limits reverse recovery losses in synchronous rectifier mode below 200 kHz. |
| RθJC | 0.65 °C/W - Enables thermal design with ≤150°C junction rise at 230 W dissipation on standard TO-220 heatsink. |
Pinout & Package
IRFB7537PBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), featuring three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the drain terminal and must be insulated from heatsink unless drain is at system ground potential.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Receives 10 V logic-level drive to fully enhance; threshold VGS(th) = 2.1–3.7 V ensures TTL/CMOS compatibility. |
| D | Drain (high-side switch node) | Connected to metal tab; requires electrical isolation when mounted to heatsink unless drain is grounded. |
| S | Source (power return path) | Serves as reference for gate drive; low-inductance layout critical to minimize shoot-through risk in bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt capability | 10 V/ns at TJ = 175°C - prevents false turn-on during high dv/dt commutation in half-bridge leg. |
| Fully characterized avalanche SOA | EAS = 270 mJ, IAR = 554 A - enables reliable unclamped inductive switching without external protection. |
| Low gate charge with optimized Qgd/Qg ratio | Qgd = 43 nC / Qg = 142 nC → 30% - improves Miller immunity and reduces switching loss sensitivity to layout parasitics. |
| Thermally robust construction | RθJC = 0.65 °C/W and TJ(max) = 175°C - supports sustained 122 A operation at TC = 100°C in compact enclosures. |
Applications
| Brushed Motor Drive | BLDC Motor Drive |
|---|---|
|
Use Scenario: High-current H-bridge for cordless power tools operating from 36–48 V battery packs. IC Role / Device Role / Timing Role: Low-side and high-side switching element in PWM-controlled full-bridge, handling bidirectional 150 A peak currents. Use Value: 2.75 mΩ RDS(on) limits I²R loss to <34 W at 150 A, enabling >97% efficiency at full load while maintaining TJ < 150°C. |
Use Scenario: Six-step commutation in 4 kW e-bike controller with 48 V nominal input. IC Role / Device Role / Timing Role: Phase-leg switch in three-phase inverter, requiring fast body diode recovery (trr = 39 ns) for zero-voltage switching transitions. Use Value: 10 V/ns diode dv/dt rating prevents spurious turn-on during high-speed phase reversal, eliminating need for external diode clamps. |
| Synchronous Rectification | OR-ing Power Switch |
|
Use Scenario: Secondary-side switch in 60 V output, 500 W LLC resonant DC/DC converter for telecom rectifiers. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, driven by transformer-coupled gate signal synchronized to primary switching. Use Value: 173 A continuous current rating and 230 W power dissipation allow single-device implementation without paralleling, reducing BOM count and layout area. |
Use Scenario: Redundant 48 V DC power supply backplane with automatic failover between two sources. IC Role / Device Role / Timing Role: Low-loss OR-ing switch controlling power path direction based on source voltage priority and fault status. Use Value: 3.30 mΩ max RDS(on) ensures <12 mV forward drop at 30 A, minimizing insertion loss and thermal stress versus discrete diode solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | RDS(on) = 2.4 mΩ (typ.), Qg = 155 nC, TO-220FP package with non-isolated tab | Higher gate charge increases driver loss; non-isolated tab requires drain-grounded heatsink mounting | Preferred where lower RDS(on) justifies higher gate drive power and mechanical grounding constraints permit. |
| IXTH170N06S3 | RDS(on) = 2.8 mΩ (typ.), Qg = 120 nC, TO-247AC package with 0.35 °C/W RθJC | Superior thermal performance but larger footprint; lower Qg improves high-frequency efficiency | Selected when thermal budget is tighter than board space, especially above 200 kHz switching frequencies. |
Compared with STL220N6F7 and IXTH170N06S3, IRFB7537PBF offers the best balance of ultra-low RDS(on), moderate Qg, and TO-220AB isolation - making it optimal for cost-sensitive, medium-frequency (<100 kHz) industrial motor drives where heatsink isolation is required.
Availability
IRFB7537PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across automotive aftermarket, industrial automation, and renewable energy power conversion programs.
Supply support for IRFB7537PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® Power MOSFET portfolio, emphasizing high-reliability silicon solutions for power conversion.
The IRFB7537PBF belongs to the StrongIRFET™ series designed specifically for high-current, high-ruggedness switching in motor control and industrial SMPS - prioritizing avalanche robustness, body diode performance, and thermal stability over raw speed.
FAQ
What is the maximum safe operating temperature for IRFB7537PBF?
The IRFB7537PBF has a specified operating junction temperature range of –55°C to +175°C. Its absolute maximum rating is defined at TJ = 175°C, and thermal design must ensure this limit is not exceeded under worst-case conduction and switching losses. Derating begins at TC = 25°C with linear derating factor of 1.5 W/°C.
Can IRFB7537PBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (normalized RDS(on) rises with temperature) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink to maintain balanced channel conduction across devices.
Is IRFB7537PBF suitable for 48 V automotive applications?
It meets 48 V system requirements with 60 V VDSS and AEC-Q101 stress testing compliance (per Infineon's qualification documentation for this part family), but final automotive qualification requires system-level validation including ISO 7637-2 transient immunity and EMC performance in vehicle harness environments.
Does IRFB7537PBF require a gate resistor for EMI control?
A gate resistor is mandatory to control dV/dt and di/dt during switching transitions. Typical values range from 2.2 Ω to 10 Ω depending on driver strength and layout inductance. Lower values improve switching speed but increase EMI; higher values reduce ringing and radiated emissions at the expense of increased switching loss.
IRFB7537PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®, StrongIRFET™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 173A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.3mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 3.7V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 210 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7020 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFB7537PBF FAQ
1.How can I place an order for IRFB7537PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFB7537PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFB7537PBF reliable?
The price and inventory of IRFB7537PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB7537PBF is usually 5 days.
3.What payment methods are accepted for IRFB7537PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB7537PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFB7537PBF?
IRFB7537PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFB7537PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFB7537PBF?
For technical support, including IRFB7537PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB7537PBF requirements.
6.How does Aetrix verify that IRFB7537PBF is sourced from the original manufacturer or authorized distributors?
All IRFB7537PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB7537PBF meets industry standards.
7.What is the process for return or replacement of IRFB7537PBF?
All IRFB7537PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB7537PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFB7537PBF part is unused and in its original packaging.
Return procedure for IRFB7537PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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