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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB7540PBF

Name: IRFB7540PBF
Brand: Infineon Technologies
SKU: IRFB7540PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB7540PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB7540PBF.pdf

Description:: MOSFET N-CH 60V 110A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB7540PBF from Infineon Technologies (formerly International Rectifier) is a 60V, 110A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-current switching in motor drives and DC/DC converters. It delivers 4.2 mΩ typical R_DS(on) at V_GS = 10 V, supports 430 A pulsed drain current, and features enhanced body diode dV/dt (11 V/ns) and avalanche ruggedness (180 mJ single-pulse).

For engineers reviewing the IRFB7540PBF datasheet, IRFB7540PBF pinout, IRFB7540PBF application, or IRFB7540PBF equivalent, key selection criteria include continuous current rating at elevated case temperature (80 A @ T_C = 100°C), gate charge (88 nC typ.), SOA compliance in hard-switching topologies, and thermal resistance (R_θJC = 0.95°C/W).

Technical Context

This MOSFET employs planar silicon process with optimized cell layout to achieve low on-resistance while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (2.1–3.7 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers.

The device integrates a fast, soft-recovery body diode (t_rr = 33 ns @ 25°C, Q_rr = 36 nC) and exhibits fully characterized C_iss (4555 pF), C_oss (415 pF), and C_rss (270 pF) for accurate snubber and gate drive design in resonant and synchronous rectifier applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage; suitable for 48 V bus systems with margin against transients.
R_DS(on) max	5.1 mΩ @ V_GS = 10 V, I_D = 65 A - Enables <1 W conduction loss at 65 A, critical for high-efficiency motor inverters.
I_D cont @ T_C = 100°C	80 A - Sustains high load current in thermally constrained enclosures without derating below system requirement.
Q_g typ.	88 nC - Determines gate driver power and switching speed; compatible with common 1–2 A peak gate drivers.
E_AS single-pulse	180 mJ @ T_J = 25°C - Supports unclamped inductive switching in half-bridge leg without external clamping.
t_r/t_f	76 ns / 56 ns @ I_D = 65 A - Enables >100 kHz switching in hard-switched DC/DC converters with controlled EMI.
V_SD max	1.2 V @ I_S = 65 A - Low forward drop of integrated body diode reduces losses in synchronous rectification and OR-ing.

Pinout & Package

IRFB7540PBF is housed in a TO-220AB package with isolated tab (drain-connected), standard lead pitch (2.54 mm), and screw-mount capability (6-32 or M3, 1.1 N·m torque). The package provides 0.95°C/W junction-to-case thermal resistance and supports direct heatsink mounting via the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; requires isolation washer if heatsink is grounded; primary thermal path.
Source	Power return / reference node for gate drive	Low-inductance source connection essential for stable gate control; forms common node with driver ground in high-side configurations.
Gate	Control input for channel modulation	High-impedance terminal requiring low-impedance gate driver (<2.7 Ω recommended) to minimize switching losses and oscillation.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	11 V/ns at T_J = 175°C - Prevents false turn-on during fast voltage transitions in bridge-leg commutation.
Fully characterized avalanche SOA	180 mJ single-pulse, 313 mJ with 1 mH inductance - Enables reliable operation in unclamped inductive loads without external protection.
Low C_oss effective energy	C_{oss eff.(ER)} = 430 pF - Reduces turn-off loss and improves efficiency in ZVS and resonant topologies.
Lead-free, RoHS-compliant construction	Meets JEDEC J-STD-020 reflow profile - Supports automated assembly without lead-free solder compatibility concerns.
Thermally rugged junction	T_J range: –55°C to +175°C - Allows deployment in under-hood automotive, industrial motor drives, and high-ambient environments.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: H-bridge control of 24–48 V brushed DC motors in power tools and robotics.

IC Role / Device Role / Timing Role: High-side and low-side switching element enabling bidirectional current flow and PWM speed control.

Use Value: 4.2 mΩ R_DS(on) minimizes I²R heating at stall currents >100 A, extending tool runtime and brush life.

Use Scenario: Three-phase inverter stage in 48 V BLDC fans, pumps, and e-bike controllers.

IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation with fast body diode recovery (33 ns) for reduced shoot-through risk.

Use Value: 11 V/ns dV/dt immunity prevents parasitic turn-on during high dv/dt phase transitions in compact PCB layouts.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side switching in isolated 48 V → 12 V LLC resonant DC/DC converters.

IC Role / Device Role / Timing Role: Active replacement of Schottky diode to reduce conduction loss and improve efficiency above 200 kHz.

Use Value: 1.2 V V_SD and 36 nC Q_rr enable low-loss reverse recovery and minimal dead-time penalty in synchronous rectification.

Use Scenario: Redundant 48 V power supply OR-ing in telecom and server PSUs.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET providing low-loss, bidirectional current blocking and fault isolation.

Use Value: 80 A continuous rating at 100°C case temperature ensures sustained operation during dual-supply load sharing without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N6F6	R_DS(on) = 5.3 mΩ (max), Q_g = 92 nC, TO-220 package	Higher gate charge increases driver loss; slightly higher R_DS(on) raises conduction loss by ~2% at 65 A	Acceptable for lower-frequency (<50 kHz) motor drives where gate drive simplicity outweighs efficiency loss.
IXTH110N60L2	600 V rating, R_DS(on) = 11.5 mΩ, TO-247 package, higher R_θJC = 1.2°C/W	Over-specified voltage rating adds cost and capacitance; unsuitable for 48 V systems due to excessive C_iss (5200 pF)	Not recommended for 48 V applications; consider only if future-proofing for higher bus voltages is required.

Compared with STP110N6F6 and IXTH110N60L2, IRFB7540PBF offers the optimal balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness for 48 V motor and power conversion designs-delivering measurable efficiency gain without compromising reliability or driver complexity.

Availability

IRFB7540PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifiers requiring stable component supply across industrial production cycles and long-lifecycle programs.

Supply support for IRFB7540PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

IRFB7540PBF belongs to the StrongIRFET™ family, engineered specifically for high-current, high-ruggedness switching in motor control and industrial power conversion-emphasizing avalanche tolerance, dynamic dV/dt immunity, and thermal stability.

FAQ

What is the maximum safe operating temperature for IRFB7540PBF?

The IRFB7540PBF has a specified operating junction temperature range of –55°C to +175°C. Its absolute maximum storage temperature matches this range. Thermal design must ensure steady-state T_J remains ≤175°C under worst-case load and ambient conditions, using R_θJC = 0.95°C/W and verified heatsink performance.

Can IRFB7540PBF be used in synchronous rectification without an external diode?

Yes-the integrated body diode is characterized for synchronous rectifier use, with t_rr = 33 ns (25°C) and Q_rr = 36 nC. Its 11 V/ns dV/dt rating and soft recovery behavior allow direct replacement of Schottky diodes in 48 V secondary-side applications when driven with precise gate timing.

Is IRFB7540PBF pin-compatible with IRFS7540PbF or IRFSL7540PbF?

No-IRFB7540PbF uses TO-220AB, IRFS7540PbF uses D2PAK (TO-263), and IRFSL7540PbF uses TO-262. While electrically identical, their mechanical footprints, thermal paths, and mounting methods differ significantly; PCB layout and heatsinking must be redesigned for each package variant.

Does IRFB7540PBF require a negative gate voltage for reliable turn-off?

No-its gate threshold voltage (2.1–3.7 V) and low gate leakage (<100 nA) allow clean turn-off with 0 V gate drive. However, applying –5 V enhances noise immunity in high-dV/dt environments; the absolute maximum V_GS is ±20 V, so –5 V is well within safe limits.

IRFB7540PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 5.1mOhm @ 65A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4555 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

IRFB7540PBF FAQ

1.How can I place an order for IRFB7540PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB7540PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB7540PBF reliable?

The price and inventory of IRFB7540PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB7540PBF is usually 5 days.

3.What payment methods are accepted for IRFB7540PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB7540PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB7540PBF?

IRFB7540PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB7540PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB7540PBF?

For technical support, including IRFB7540PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB7540PBF requirements.

6.How does Aetrix verify that IRFB7540PBF is sourced from the original manufacturer or authorized distributors?

All IRFB7540PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB7540PBF meets industry standards.

7.What is the process for return or replacement of IRFB7540PBF?

All IRFB7540PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFB7540PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB7540PBF part is unused and in its original packaging.

Return procedure for IRFB7540PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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