Vishay Siliconix IRFB9N60A

Overview

IRFB9N60A from Vishay Siliconix is a 600 V, 9.2 A N-channel power MOSFET in TO-220AB package, featuring R_DS(on) = 0.75 Ω at V_GS = 10 V, Q_g = 49 nC, and 290 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS main switch and active-clamped forward topologies.

For engineers reviewing the IRFB9N60A datasheet, IRFB9N60A pinout, IRFB9N60A application, or IRFB9N60A equivalent, this device supports robust unclamped inductive switching, offers characterized dV/dt ruggedness (5.0 V/ns), and delivers stable conduction and switching performance across -55 °C to +150 °C junction temperature range.

Technical Context

The IRFB9N60A employs planar vertical DMOS technology optimized for high-voltage hard-switching applications. Its gate charge profile (Q_gs = 13 nC, Q_gd = 20 nC) enables predictable turn-on/turn-off timing with td(on) = 13 ns and tf = 22 ns under standardized 300 V/9.2 A test conditions.

Thermally, it features R_thJC = 0.75 °C/W and R_thCS = 0.50 °C/W, supporting high-power dissipation up to 170 W at T_C = 25 °C. The integral body diode provides IS = 9.2 A continuous and trr = 530–800 ns with Q_rr = 3.0–4.4 μC at 25 °C.

Key Specifications

Pinout & Package

IRFB9N60A is housed in a through-hole TO-220AB package with drain-connected tab for direct heatsink mounting. Thermal resistance from junction to case is 0.75 °C/W, and case-to-sink resistance is 0.50 °C/W with greased flat surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP9NK60ZFP and FQP9N60C, the IRFB9N60A delivers the highest single-pulse avalanche energy (290 mJ) and is optimized for demanding unclamped inductive switching, making it preferable in high-reliability offline SMPS and UPS where transient overloads are frequent.

Availability

IRFB9N60A is available at Aetrix Electronics and suitable for offline SMPS main switch, uninterruptible power supply, and high-speed power switching applications requiring stable component supply, long-lifecycle assurance, and traceable sourcing from qualified manufacturing sites.

Supply support for IRFB9N60A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and reliability across industrial and power systems.

The IRFB9N60A belongs to Vishay's high-voltage power MOSFET product line, engineered specifically for robust hard-switching in offline power conversion, where avalanche endurance, dV/dt immunity, and thermal stability are critical.

FAQ

What is the maximum continuous drain current for IRFB9N60A at 100 °C case temperature?

The IRFB9N60A supports 5.8 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within R_thJC = 0.75 °C/W and junction temperature ≤ 150 °C. Designers must verify heatsink interface resistance and ambient conditions to maintain this rating in actual IRFB9N60A deployments.

Does IRFB9N60A have a fully characterized body diode, and what are its key parameters?

Yes, the IRFB9N60A includes a fully characterized intrinsic body diode with V_SD = 1.5 V at I_S = 9.2 A and T_J = 25 °C, trr = 530–800 ns, and Q_rr = 3.0–4.4 μC. These values are measured under standardized conditions (IF = 9.2 A, dI/dt = 100 A/μs) and support accurate modeling of freewheeling losses and EMI in bridge configurations using IRFB9N60A.

Can IRFB9N60A be used in zero-voltage switching (ZVS) topologies, and what capacitance data supports this?

Yes, IRFB9N60A supports ZVS design via its characterized capacitances: C_oss = 180 pF and C_{oss eff.} = 96 pF over 0–480 V. The effective output capacitance enables predictable resonant timing with external inductors, while low C_rss = 7.1 pF minimizes Miller feedback during transition. These parameters are explicitly provided in the IRFB9N60A datasheet for ZVS circuit optimization.

What is the gate-source voltage rating for IRFB9N60A, and why is it important for drive circuit design?

The IRFB9N60A has a ±30 V gate-source voltage rating, meaning the gate must never be driven more than 30 V above or below the source. Exceeding this risks permanent oxide damage. This rating informs gate driver selection, clamping design (e.g., Zener protection), and PCB layout - especially critical in high-noise SMPS where ground bounce could violate V_GS limits during IRFB9N60A switching.

How does the IRFB9N60A's avalanche rating compare to typical 600 V MOSFETs, and what does 290 mJ mean in practice?

The IRFB9N60A's 290 mJ single-pulse avalanche energy is among the highest in its class - exceeding many competing 600 V MOSFETs by 10–20%. In practice, this means the IRFB9N60A can safely absorb energy from inductive turn-off transients (e.g., transformer leakage spikes) without failure, reducing or eliminating the need for external snubber networks in offline SMPS using IRFB9N60A as the main switch.