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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFB9N65APBF-BE3

Name: IRFB9N65APBF-BE3
Brand: Vishay Siliconix
SKU: IRFB9N65APBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB9N65APBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB9N65APBF-BE3.pdf

Description:: MOSFET N-CH 650V 8.5A TO220AB

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Product details

Overview

IRFB9N65APBF-BE3 from Vishay Siliconix is a 650 V, 8.5 A N-channel power MOSFET in TO-220AB package, featuring 0.93 Ω R_DS(on) at V_GS = 10 V, 48 nC total gate charge, and 325 mJ single-pulse avalanche energy-designed for high-voltage switching in offline SMPS flyback and forward converters.

For engineers reviewing the IRFB9N65APBF-BE3 datasheet, IRFB9N65APBF-BE3 pinout, IRFB9N65APBF-BE3 application, or IRFB9N65APBF-BE3 equivalent, key selection criteria include avalanche ruggedness (325 mJ E_AS), dV/dt immunity (2.8 V/ns), body diode recovery (493–739 ns t_rr), and RoHS/halogen-free compliance per ordering code -BE3.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage unclamped inductive switching. Its gate structure delivers low Q_g (48 nC) and balanced Q_gd/Q_gs ratio (19/12 nC), enabling fast, controllable turn-on/turn-off with reduced Miller-induced oscillation risk in hard-switched topologies.

Thermally, it features R_thJC = 0.75 °C/W and supports continuous operation up to T_J = 150 °C. The integral body diode is characterized for reverse recovery (Q_rr = 2.1–3.2 μC, t_rr = 493–739 ns), making it suitable for freewheeling in non-synchronous converters where diode conduction occurs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands full mains-referenced DC bus in universal-input offline SMPS.
R_DS(on)	0.93 Ω @ V_GS = 10 V - Enables <5.2 W conduction loss at 5.1 A ID, supporting compact heatsink design.
Q_g	48 nC - Requires moderate gate drive strength; compatible with standard 1-A peak drivers.
E_AS	325 mJ - Sustains unclamped inductive energy during startup/fault without failure.
t_r/t_f	20 ns / 18 ns - Supports >200 kHz switching in flyback converters with low switching loss.
dV/dt rating	2.8 V/ns - Resists false turn-on in high-noise, high-dV/dt environments like PFC stages.
T_J range	−55 °C to +150 °C - Validated for industrial and telecom power supply ambient conditions.

Pinout & Package

IRFB9N65APBF-BE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), rated for 167 W at T_C = 25 °C and 0.75 °C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives voltage-controlled signal; 12 nC Q_gs defines Miller plateau duration and drive timing.
D (Drain)	High-side power output	Connected to drain metallization and case tab; electrically tied to heatsink-requires isolation if heatsink is grounded.
S (Source)	Power return reference	Serves as local ground reference for gate drive; source inductance directly impacts switching stability.

Key Features

Feature	Design Value
Low Q_g (48 nC)	Reduces gate driver power demand and enables simpler, lower-cost drive circuitry in high-frequency SMPS.
Fully characterized C_oss eff. (84 pF)	Enables accurate soft-switching analysis and snubber design for ZVS/ZCS resonant converters.
Specified avalanche current (I_AR = 5.2 A)	Guarantees repetitive energy handling capability under transient overloads without derating.
Body diode t_rr (493–739 ns)	Minimizes reverse recovery losses and EMI in non-synchronous rectification applications.
RoHS/halogen-free (-BE3)	Meets IPC-1752A material declaration requirements for environmentally regulated end equipment.

Applications

Offline Flyback Converter	Industrial UPS Inverter Stage
Use Scenario: Primary-side switch in 65–150 W universal-input AC/DC adapter with 325 V reflected output voltage. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via transformer primary winding. Use Value: 650 V V_DS margin accommodates 325 V DC bus + 100 % surge; 325 mJ E_AS prevents failure during no-load startup stress.	Use Scenario: Half-bridge leg in 1 kVA online UPS DC/AC inverter operating from 400 V DC bus. IC Role / Device Role / Timing Role: Power switch conducting bidirectional load current with body diode freewheeling during dead time. Use Value: Specified t_rr and Q_rr minimize cross-conduction losses; 2.8 V/ns dV/dt rating ensures noise immunity in high-power gate-drive environment.
Server PSU Forward Converter	Telecom Rectifier Module
Use Scenario: Main switch in active-clamp forward topology delivering 12 V/40 A output from 380–400 V DC input. IC Role / Device Role / Timing Role: Synchronized high-side switch turning on/off at fixed frequency with precise duty control. Use Value: Low R_DS(on) (0.93 Ω) limits conduction loss to <2.4 W at full load; 167 W P_D supports forced-air cooling.	Use Scenario: Primary switch in 48 V telecom rectifier with hold-up capacitor and active PFC front-end. IC Role / Device Role / Timing Role: Hard-switched main transistor handling 650 V transients during line surges and brownouts. Use Value: Avalanche-rated construction withstands repeated 6 kV/10 A surge events per IEC 61000-4-5 without parameter shift.

Offline Flyback Converter

Industrial UPS Inverter Stage

Use Scenario: Primary-side switch in 65–150 W universal-input AC/DC adapter with 325 V reflected output voltage.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via transformer primary winding.

Use Value: 650 V V_DS margin accommodates 325 V DC bus + 100 % surge; 325 mJ E_AS prevents failure during no-load startup stress.

Use Scenario: Half-bridge leg in 1 kVA online UPS DC/AC inverter operating from 400 V DC bus.

IC Role / Device Role / Timing Role: Power switch conducting bidirectional load current with body diode freewheeling during dead time.

Use Value: Specified t_rr and Q_rr minimize cross-conduction losses; 2.8 V/ns dV/dt rating ensures noise immunity in high-power gate-drive environment.

Server PSU Forward Converter

Telecom Rectifier Module

Use Scenario: Main switch in active-clamp forward topology delivering 12 V/40 A output from 380–400 V DC input.

IC Role / Device Role / Timing Role: Synchronized high-side switch turning on/off at fixed frequency with precise duty control.

Use Value: Low R_DS(on) (0.93 Ω) limits conduction loss to <2.4 W at full load; 167 W P_D supports forced-air cooling.

Use Scenario: Primary switch in 48 V telecom rectifier with hold-up capacitor and active PFC front-end.

IC Role / Device Role / Timing Role: Hard-switched main transistor handling 650 V transients during line surges and brownouts.

Use Value: Avalanche-rated construction withstands repeated 6 kV/10 A surge events per IEC 61000-4-5 without parameter shift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK65ZFP	Zener-protected gate; slightly higher R_DS(on) (0.95 Ω); lower Q_g (38 nC)	Better gate robustness in noisy environments; reduced drive loss but higher conduction loss	Prefer when gate ESD immunity is critical and thermal margin allows higher R_DS(on)
IXTH9N65X2	Enhanced trench process; lower R_DS(on) (0.75 Ω); higher C_iss (1750 pF)	Lower conduction loss at cost of increased capacitive switching loss and gate drive demand	Prefer when efficiency at light-to-moderate load dominates over gate drive complexity

Compared with STP9NK65ZFP and IXTH9N65X2, IRFB9N65APBF-BE3 offers balanced trade-offs: mid-range R_DS(on), verified avalanche performance, and industry-standard TO-220AB mechanical compatibility-making it ideal for cost-sensitive, thermally constrained industrial SMPS designs requiring proven ruggedness.

Availability

IRFB9N65APBF-BE3 is available at Aetrix Electronics and suitable for offline switch-mode power supplies, uninterruptible power systems, and high-speed industrial power switching applications requiring stable component supply and long-term lifecycle support.

Supply support for IRFB9N65APBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific characterization.

The IRFB9N65APBF-BE3 belongs to Vishay's high-voltage "IRF" power MOSFET family, engineered for robustness in demanding offline power conversion-particularly where unclamped inductive switching, high dV/dt, and thermal cycling are routine.

FAQ

What is the maximum continuous drain current for IRFB9N65APBF-BE3 at 100 °C case temperature?

The IRFB9N65APBF-BE3 supports 5.4 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full-load conditions.

Does IRFB9N65APBF-BE3 have a fully characterized body diode?

Yes, the IRFB9N65APBF-BE3 includes full characterization of its intrinsic body diode: reverse recovery time (t_rr = 493–739 ns), reverse recovery charge (Q_rr = 2.1–3.2 μC), and forward voltage (V_SD = 1.5 V at I_S = 5.2 A). These parameters are measured per JEDEC standards and enable accurate loss modeling in non-synchronous converter topologies.

What does the "-BE3" suffix indicate in IRFB9N65APBF-BE3?

The "-BE3" suffix denotes that IRFB9N65APBF-BE3 is lead (Pb)-free and halogen-free, compliant with both RoHS Directive 2011/65/EU and Vishay's internal halogen-free standard (per document 99912). It replaces the earlier "-PbF" variant and is intended for environmentally regulated end equipment such as telecom infrastructure and industrial automation systems.

Can IRFB9N65APBF-BE3 be used in zero-voltage switching (ZVS) circuits?

Yes, IRFB9N65APBF-BE3 supports ZVS operation due to its fully specified effective output capacitance (C_{oss eff.} = 84 pF at V_DS = 0–520 V) and low Q_gd/Q_gs ratio (19/12 nC). These characteristics allow predictable resonant tank behavior and reduce voltage-dependent switching loss-key for LLC and phase-shifted full-bridge designs operating above 100 kHz.

Is IRFB9N65APBF-BE3 suitable for automotive applications?

No, IRFB9N65APBF-BE3 is not qualified to AEC-Q101 or automotive-grade reliability standards. While it operates across −55 °C to +150 °C, its qualification is limited to industrial and commercial power supply applications. For automotive use, designers should select Vishay's AEC-Q101-qualified alternatives such as the SIHP12N60E or similar qualified high-voltage MOSFETs.

IRFB9N65APBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 930mOhm @ 5.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1417 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB9N65APBF-BE3 FAQ

1.How can I place an order for IRFB9N65APBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB9N65APBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB9N65APBF-BE3 reliable?

The price and inventory of IRFB9N65APBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB9N65APBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFB9N65APBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB9N65APBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB9N65APBF-BE3?

IRFB9N65APBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB9N65APBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB9N65APBF-BE3?

For technical support, including IRFB9N65APBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB9N65APBF-BE3 requirements.

6.How does Aetrix verify that IRFB9N65APBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFB9N65APBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB9N65APBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFB9N65APBF-BE3?

All IRFB9N65APBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFB9N65APBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB9N65APBF-BE3 part is unused and in its original packaging.

Return procedure for IRFB9N65APBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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