Vishay Siliconix IRFBC20PBF-BE3
- Part No.:
- IRFBC20PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFBC20PBF-BE3.pdf
- Description:
- MOSFET N-CH 600V 2.2A TO220AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IRFBC20PBF-BE3 from Vishay Siliconix is a 600 V, 2.2 A N-channel power MOSFET in TO-220AB package, featuring 4.4 Ω RDS(on) at VGS = 10 V, 18 nC total gate charge, and repetitive avalanche rating up to 2.2 A - designed for high-voltage flyback and offline SMPS primary-side switching.
For engineers reviewing the IRFBC20PBF-BE3 datasheet, IRFBC20PBF-BE3 pinout, IRFBC20PBF-BE3 application, or IRFBC20PBF-BE3 equivalent, key selection criteria include its 600 V blocking capability, low gate charge for efficient hard-switching, rugged unclamped inductive switching performance, and RoHS-compliant/halogen-free construction per Vishay S21-0868-Rev. C.
Technical Context
This third-generation planar vertical power MOSFET uses a ruggedized die design with dynamic dV/dt immunity (3.0 V/ns) and built-in body diode optimized for snubberless operation in discontinuous conduction mode (DCM) flyback converters. Its 2.5 °C/W junction-to-case thermal resistance enables reliable 50 W dissipation at TC = 25 °C.
The device supports simple gate drive (±20 V VGS rating, 3.0 nC Qgs) and parallel operation due to positive temperature coefficient of RDS(on). Avalanche energy handling (84 mJ single-pulse, 5.0 mJ repetitive) is validated under defined test conditions (L = 31 mH, IAS = 2.2 A).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports primary-side switching in universal-input (85–265 VAC) offline power supplies without derating. |
| RDS(on) @ VGS = 10 V | 4.4 Ω - determines conduction loss in high-voltage, low-current SMPS stages; enables <2.2 A continuous operation at TC = 25 °C. |
| Qg | 18 nC - defines gate drive power requirement and switching speed; compatible with standard PWM controllers driving ≤20 nC loads. |
| EAS | 84 mJ - quantifies single-pulse avalanche robustness during transformer leakage energy discharge in flyback topologies. |
| dV/dt Rating | 3.0 V/ns - ensures immunity to false turn-on during high dv/dt transients in high-frequency, high-voltage switching nodes. |
| TJ Range | –55 to +150 °C - supports operation in industrial ambient environments and sealed power enclosures with limited airflow. |
Pinout & Package
IRFBC20PBF-BE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standardized mounting footprint, and 1.1 N·m screw torque specification. Thermal interface requires flat, greased heatsink surface (RthCS = 0.50 °C/W typical).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level gate drive; input capacitance (Ciss = 350 pF) shapes Miller plateau timing. |
| D (Drain) | High-voltage output terminal | Connected to transformer primary and HV rail; electrically tied to metal tab for direct heatsinking. |
| S (Source) | Power return and reference node | Serves as current sense point and gate drive return; internal source inductance (LS = 7.5 nH) affects diode recovery behavior. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Validated for 2.2 A IAR and 5.0 mJ EAR, enabling reliable operation under transient overloads without external clamping. |
| Dynamic dV/dt immunity | 3.0 V/ns rating prevents spurious turn-on during fast voltage transitions in high-side switching configurations. |
| Low Qgd/Qg ratio | Qgd = 8.9 nC / Qg = 18 nC ≈ 49% - reduces Miller-induced switching delay and improves controllability in hard-switched topologies. |
| RoHS-compliant & halogen-free | IRFBC20PBF-BE3 meets JEDEC JS709C and IPC-1752A requirements, eliminating brominated flame retardants and lead. |
Applications
| Offline AC-DC Adapters | Flyback SMPS for Industrial Controls |
|---|---|
Use Scenario: 12 V/2 A universal-input wall adapter powering IoT sensors and PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer via transformer coupling at 65–100 kHz. Use Value: 600 V rating avoids derating in 265 VAC peak line conditions; 4.4 Ω RDS(on) limits conduction loss to <250 mW at full load. | Use Scenario: 24 V/1.5 A regulated supply inside DIN-rail mounted programmable logic controller. IC Role / Device Role / Timing Role: Discontinuous conduction mode (DCM) flyback switch with integrated body diode conducting reverse recovery current. Use Value: 290–580 ns trr and 0.67–1.3 μC Qrr minimize switching loss during diode commutation at 85 °C ambient. |
| LED Driver Power Stages | Capacitor-Input Rectifier Protection |
Use Scenario: Constant-voltage LED driver for commercial signage operating from 120/230 VAC mains. IC Role / Device Role / Timing Role: High-side switch regulating bulk capacitor charging and LED string current via primary-side feedback. Use Value: Repetitive avalanche rating (5.0 mJ EAR) absorbs surge energy during cold-start inrush limiting. | Use Scenario: Input stage protection in legacy industrial power supplies using capacitor-input rectifiers. IC Role / Device Role / Timing Role: Voltage-clamping switch diverting transient overvoltage across bulk capacitor during line surges. Use Value: 84 mJ single-pulse avalanche energy withstands IEC 61000-4-5 Level 3 (2 kV line-earth) surge events without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | 600 V, 5.5 Ω RDS(on), 16 nC Qg, SuperFET II technology | Higher RDS(on) increases conduction loss but lower Qg improves light-load efficiency | Prefer when optimizing for no-load power consumption over full-load thermal margin |
| IXTP2N60P | 600 V, 5.2 Ω RDS(on), 22 nC Qg, PolarHT process | Higher gate charge demands stronger driver; wider SOA supports higher pulse currents | Prefer when designing for intermittent overload tolerance in motor control auxiliary supplies |
Compared with STP6NK60ZFP and IXTP2N60P, IRFBC20PBF-BE3 offers the lowest RDS(on) (4.4 Ω) among these 600 V devices, delivering superior full-load conduction efficiency in space-constrained adapters, while maintaining balanced gate drive demand and proven avalanche ruggedness in production flyback designs.
Availability
IRFBC20PBF-BE3 is available at Aetrix Electronics and suitable for offline AC-DC adapters, flyback SMPS for industrial controls, LED driver power stages, and capacitor-input rectifier protection requiring stable component supply and long-term lifecycle support.
Supply support for IRFBC20PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The IRFBC20PBF-BE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for cost-sensitive, high-reliability offline switching power supplies where avalanche robustness and thermal stability are critical.
FAQ
What is the maximum continuous drain current for IRFBC20PBF-BE3 at 100 °C case temperature?
The IRFBC20PBF-BE3 supports 1.4 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be verified against actual heatsink performance and ambient conditions in the final layout. The IRFBC20PBF-BE3 datasheet (S21-0868-Rev. C) confirms this value under steady-state conduction with proper thermal management.
Does IRFBC20PBF-BE3 have a fully rated body diode for freewheeling applications?
Yes, the IRFBC20PBF-BE3 integrates a robust body diode rated for 2.2 A continuous source-drain current and 8.0 A pulsed current. Its reverse recovery time (trr = 290–580 ns) and charge (Qrr = 0.67–1.3 μC) are characterized at TJ = 25 °C, IS = 2.0 A, and dI/dt = 100 A/μs. The IRFBC20PBF-BE3 body diode is suitable for DCM flyback freewheeling but not recommended for high-frequency synchronous rectification.
Is IRFBC20PBF-BE3 pin-compatible with earlier IRFBC20 variants like IRFBC20PbF?
Yes, IRFBC20PBF-BE3 is mechanically and electrically pin-compatible with IRFBC20PbF and other TO-220AB-packaged variants in the IRFBC20 family. Both share identical pinout (G-D-S), thermal pad configuration, and electrical specifications. The IRFBC20PBF-BE3 differs only in material content: it is lead-free and halogen-free per JEDEC JS709C, whereas IRFBC20PbF is lead-free but not halogen-free.
What is the gate threshold voltage range for IRFBC20PBF-BE3?
The gate-source threshold voltage (VGS(th)) for IRFBC20PBF-BE3 is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range indicates standard-level gate drive compatibility - the IRFBC20PBF-BE3 requires ≥10 V VGS for full enhancement and minimal RDS(on), and is not a logic-level MOSFET. The IRFBC20PBF-BE3 operates reliably within this threshold window across its –55 to +150 °C junction temperature range.
Can IRFBC20PBF-BE3 be used in parallel configurations?
Yes, IRFBC20PBF-BE3 supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing under thermal imbalance. Vishay explicitly lists "Ease of paralleling" as a feature. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsinking. The IRFBC20PBF-BE3's 3.0 nC Qgs and 8.9 nC Qgd help minimize gate oscillation risk during parallel switching.
IRFBC20PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.4Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFBC20PBF-BE3 FAQ
1.How can I place an order for IRFBC20PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFBC20PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFBC20PBF-BE3 reliable?
The price and inventory of IRFBC20PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBC20PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFBC20PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBC20PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFBC20PBF-BE3?
IRFBC20PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFBC20PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFBC20PBF-BE3?
For technical support, including IRFBC20PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBC20PBF-BE3 requirements.
6.How does Aetrix verify that IRFBC20PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFBC20PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBC20PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFBC20PBF-BE3?
All IRFBC20PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBC20PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFBC20PBF-BE3 part is unused and in its original packaging.
Return procedure for IRFBC20PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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