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Vishay Siliconix IRFBC20PBF-BE3

Part No.:
IRFBC20PBF-BE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIRFBC20PBF-BE3.pdf
Description:
MOSFET N-CH 600V 2.2A TO220AB
Quantity:
Payment:
Payment
Shipping:
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Inventory:972

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Product details

Overview

IRFBC20PBF-BE3 from Vishay Siliconix is a 600 V, 2.2 A N-channel power MOSFET in TO-220AB package, featuring 4.4 Ω RDS(on) at VGS = 10 V, 18 nC total gate charge, and repetitive avalanche rating up to 2.2 A - designed for high-voltage flyback and offline SMPS primary-side switching.

For engineers reviewing the IRFBC20PBF-BE3 datasheet, IRFBC20PBF-BE3 pinout, IRFBC20PBF-BE3 application, or IRFBC20PBF-BE3 equivalent, key selection criteria include its 600 V blocking capability, low gate charge for efficient hard-switching, rugged unclamped inductive switching performance, and RoHS-compliant/halogen-free construction per Vishay S21-0868-Rev. C.

Technical Context

This third-generation planar vertical power MOSFET uses a ruggedized die design with dynamic dV/dt immunity (3.0 V/ns) and built-in body diode optimized for snubberless operation in discontinuous conduction mode (DCM) flyback converters. Its 2.5 °C/W junction-to-case thermal resistance enables reliable 50 W dissipation at TC = 25 °C.

The device supports simple gate drive (±20 V VGS rating, 3.0 nC Qgs) and parallel operation due to positive temperature coefficient of RDS(on). Avalanche energy handling (84 mJ single-pulse, 5.0 mJ repetitive) is validated under defined test conditions (L = 31 mH, IAS = 2.2 A).

Key Specifications

ParameterValue and Actual Design Meaning
VDS600 V - supports primary-side switching in universal-input (85–265 VAC) offline power supplies without derating.
RDS(on) @ VGS = 10 V4.4 Ω - determines conduction loss in high-voltage, low-current SMPS stages; enables <2.2 A continuous operation at TC = 25 °C.
Qg18 nC - defines gate drive power requirement and switching speed; compatible with standard PWM controllers driving ≤20 nC loads.
EAS84 mJ - quantifies single-pulse avalanche robustness during transformer leakage energy discharge in flyback topologies.
dV/dt Rating3.0 V/ns - ensures immunity to false turn-on during high dv/dt transients in high-frequency, high-voltage switching nodes.
TJ Range–55 to +150 °C - supports operation in industrial ambient environments and sealed power enclosures with limited airflow.

Pinout & Package

IRFBC20PBF-BE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standardized mounting footprint, and 1.1 N·m screw torque specification. Thermal interface requires flat, greased heatsink surface (RthCS = 0.50 °C/W typical).

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control electrodeReceives 10 V logic-level gate drive; input capacitance (Ciss = 350 pF) shapes Miller plateau timing.
D (Drain)High-voltage output terminalConnected to transformer primary and HV rail; electrically tied to metal tab for direct heatsinking.
S (Source)Power return and reference nodeServes as current sense point and gate drive return; internal source inductance (LS = 7.5 nH) affects diode recovery behavior.

Key Features

FeatureDesign Value
Repetitive avalanche ratedValidated for 2.2 A IAR and 5.0 mJ EAR, enabling reliable operation under transient overloads without external clamping.
Dynamic dV/dt immunity3.0 V/ns rating prevents spurious turn-on during fast voltage transitions in high-side switching configurations.
Low Qgd/Qg ratioQgd = 8.9 nC / Qg = 18 nC ≈ 49% - reduces Miller-induced switching delay and improves controllability in hard-switched topologies.
RoHS-compliant & halogen-freeIRFBC20PBF-BE3 meets JEDEC JS709C and IPC-1752A requirements, eliminating brominated flame retardants and lead.

Applications

Offline AC-DC AdaptersFlyback SMPS for Industrial Controls

Use Scenario: 12 V/2 A universal-input wall adapter powering IoT sensors and PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer via transformer coupling at 65–100 kHz.

Use Value: 600 V rating avoids derating in 265 VAC peak line conditions; 4.4 Ω RDS(on) limits conduction loss to <250 mW at full load.

Use Scenario: 24 V/1.5 A regulated supply inside DIN-rail mounted programmable logic controller.

IC Role / Device Role / Timing Role: Discontinuous conduction mode (DCM) flyback switch with integrated body diode conducting reverse recovery current.

Use Value: 290–580 ns trr and 0.67–1.3 μC Qrr minimize switching loss during diode commutation at 85 °C ambient.

LED Driver Power StagesCapacitor-Input Rectifier Protection

Use Scenario: Constant-voltage LED driver for commercial signage operating from 120/230 VAC mains.

IC Role / Device Role / Timing Role: High-side switch regulating bulk capacitor charging and LED string current via primary-side feedback.

Use Value: Repetitive avalanche rating (5.0 mJ EAR) absorbs surge energy during cold-start inrush limiting.

Use Scenario: Input stage protection in legacy industrial power supplies using capacitor-input rectifiers.

IC Role / Device Role / Timing Role: Voltage-clamping switch diverting transient overvoltage across bulk capacitor during line surges.

Use Value: 84 mJ single-pulse avalanche energy withstands IEC 61000-4-5 Level 3 (2 kV line-earth) surge events without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP6NK60ZFP600 V, 5.5 Ω RDS(on), 16 nC Qg, SuperFET II technologyHigher RDS(on) increases conduction loss but lower Qg improves light-load efficiencyPrefer when optimizing for no-load power consumption over full-load thermal margin
IXTP2N60P600 V, 5.2 Ω RDS(on), 22 nC Qg, PolarHT processHigher gate charge demands stronger driver; wider SOA supports higher pulse currentsPrefer when designing for intermittent overload tolerance in motor control auxiliary supplies

Compared with STP6NK60ZFP and IXTP2N60P, IRFBC20PBF-BE3 offers the lowest RDS(on) (4.4 Ω) among these 600 V devices, delivering superior full-load conduction efficiency in space-constrained adapters, while maintaining balanced gate drive demand and proven avalanche ruggedness in production flyback designs.

Availability

IRFBC20PBF-BE3 is available at Aetrix Electronics and suitable for offline AC-DC adapters, flyback SMPS for industrial controls, LED driver power stages, and capacitor-input rectifier protection requiring stable component supply and long-term lifecycle support.

Supply support for IRFBC20PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The IRFBC20PBF-BE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for cost-sensitive, high-reliability offline switching power supplies where avalanche robustness and thermal stability are critical.

FAQ

What is the maximum continuous drain current for IRFBC20PBF-BE3 at 100 °C case temperature?

The IRFBC20PBF-BE3 supports 1.4 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be verified against actual heatsink performance and ambient conditions in the final layout. The IRFBC20PBF-BE3 datasheet (S21-0868-Rev. C) confirms this value under steady-state conduction with proper thermal management.

Does IRFBC20PBF-BE3 have a fully rated body diode for freewheeling applications?

Yes, the IRFBC20PBF-BE3 integrates a robust body diode rated for 2.2 A continuous source-drain current and 8.0 A pulsed current. Its reverse recovery time (trr = 290–580 ns) and charge (Qrr = 0.67–1.3 μC) are characterized at TJ = 25 °C, IS = 2.0 A, and dI/dt = 100 A/μs. The IRFBC20PBF-BE3 body diode is suitable for DCM flyback freewheeling but not recommended for high-frequency synchronous rectification.

Is IRFBC20PBF-BE3 pin-compatible with earlier IRFBC20 variants like IRFBC20PbF?

Yes, IRFBC20PBF-BE3 is mechanically and electrically pin-compatible with IRFBC20PbF and other TO-220AB-packaged variants in the IRFBC20 family. Both share identical pinout (G-D-S), thermal pad configuration, and electrical specifications. The IRFBC20PBF-BE3 differs only in material content: it is lead-free and halogen-free per JEDEC JS709C, whereas IRFBC20PbF is lead-free but not halogen-free.

What is the gate threshold voltage range for IRFBC20PBF-BE3?

The gate-source threshold voltage (VGS(th)) for IRFBC20PBF-BE3 is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range indicates standard-level gate drive compatibility - the IRFBC20PBF-BE3 requires ≥10 V VGS for full enhancement and minimal RDS(on), and is not a logic-level MOSFET. The IRFBC20PBF-BE3 operates reliably within this threshold window across its –55 to +150 °C junction temperature range.

Can IRFBC20PBF-BE3 be used in parallel configurations?

Yes, IRFBC20PBF-BE3 supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing under thermal imbalance. Vishay explicitly lists "Ease of paralleling" as a feature. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsinking. The IRFBC20PBF-BE3's 3.0 nC Qgs and 8.9 nC Qgd help minimize gate oscillation risk during parallel switching.

IRFBC20PBF-BE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.4Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
350 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
50W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRFBC20PBF-BE3 FAQ

1.How can I place an order for IRFBC20PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBC20PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBC20PBF-BE3 reliable?

The price and inventory of IRFBC20PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBC20PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFBC20PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBC20PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBC20PBF-BE3?

IRFBC20PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBC20PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBC20PBF-BE3?

For technical support, including IRFBC20PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBC20PBF-BE3 requirements.

6.How does Aetrix verify that IRFBC20PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFBC20PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBC20PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFBC20PBF-BE3?

All IRFBC20PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBC20PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBC20PBF-BE3 part is unused and in its original packaging.

Return procedure for IRFBC20PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFBC20PBF-BE3 Tags

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