Vishay Siliconix IRFBC30ASPBF

Overview

IRFBC30ASPBF from Vishay Siliconix is a 600 V, 3.6 A N-channel power MOSFET in TO-220AB package, optimized for high-voltage flyback SMPS topologies with low gate charge (23 nC) and rugged avalanche capability (290 mJ single-pulse). It operates up to 150 °C junction temperature and delivers 2.2 Ω R_DS(on) at V_GS = 10 V, enabling efficient switching in uninterruptible power supplies and industrial DC-DC converters.

For engineers reviewing the IRFBC30ASPBF datasheet, IRFBC30ASPBF pinout, IRFBC30ASPBF application, or IRFBC30ASPBF equivalent, this page provides verified device identity, validated thermal and dynamic parameters, confirmed TO-220AB terminal mapping, and two rigorously cross-referenced alternative parts for high-voltage SMPS design continuity.

Technical Context

This MOSFET employs planar vertical DMOS technology with fully characterized C_iss (510 pF), C_oss (70 pF), and C_rss (3.5 pF) to support precise snubber design and EMI prediction in 300–480 V DC bus applications. Its 7.0 V/ns peak diode recovery dV/dt rating and 400–600 ns body diode t_rr enable stable operation under fast-switching, inductive-load conditions.

The device features a gate threshold voltage range of 2.0–4.5 V and exhibits +0.67 V/°C V_DS temperature coefficient - critical for overvoltage protection coordination in wide-temperature-range power systems. Avalanche energy ratings (E_AS = 290 mJ, I_AR = 3.6 A) are specified per repetitive and single-pulse test conditions with defined L, R_g, and T_J constraints.

Key Specifications

Pinout & Package

IRFBC30ASPBF uses the standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole configuration, and 1.7 °C/W junction-to-case thermal resistance. Mounting torque is 1.1 N·m for M3 screws.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with IRFBC30ASPBF, STP6NK60ZFP offers higher current capacity but reduced avalanche robustness, while FQP6N60C lowers conduction loss at the expense of lower E_AS and unverified dV/dt immunity - making IRFBC30ASPBF the preferred choice for unclamped flyback and high-transient industrial UPS applications.

Availability

IRFBC30ASPBF is available at Aetrix Electronics and suitable for AC-DC flyback converters, industrial UPS inverters, and telecom DC-DC bricks requiring stable component supply across extended production lifecycles.

Supply support for IRFBC30ASPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFBC30ASPBF belongs to Vishay's high-voltage planar MOSFET product line, engineered specifically for rugged, high-efficiency switching in offline power supplies and uninterruptible power systems.

FAQ

What is the maximum continuous drain current for IRFBC30ASPBF at 100 °C case temperature?

The maximum continuous drain current for IRFBC30ASPBF is 2.3 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied in thermal design calculations alongside R_thJC = 1.7 °C/W to ensure junction temperature remains ≤150 °C under actual operating conditions. IRFBC30ASPBF maintains safe operation only when heatsinking and ambient conditions support this derated current.

Does IRFBC30ASPBF have a built-in body diode, and what are its key parameters?

Yes, IRFBC30ASPBF integrates a monolithic body diode with typical forward voltage V_SD = 1.6 V at I_S = 3.6 A and T_J = 25 °C. Its reverse recovery time t_rr is 400–600 ns under standardized test conditions (I_F = 3.6 A, dI/dt = 100 A/μs), and Q_rr is 1.1–1.7 μC. These values directly impact switching loss and EMI in hard-switched topologies, and IRFBC30ASPBF's characterized t_rr enables accurate loss modeling.

Is IRFBC30ASPBF RoHS-compliant and halogen-free?

IRFBC30ASPBF is RoHS-compliant (lead-free) as indicated by the "PbF" suffix and confirmed in Vishay document 91108. However, it is not halogen-free - the "-BE3" variant (IRFBC30APbF-BE3) carries that qualification. The IRFBC30ASPBF meets EU Directive 2011/65/EU requirements and is qualified for standard Pb-free reflow soldering processes, with peak temperature tolerance up to 300 °C for 10 seconds.

What is the gate threshold voltage range for IRFBC30ASPBF, and how does it affect drive design?

The gate threshold voltage V_GS(th) for IRFBC30ASPBF is specified from 2.0 V to 4.5 V at I_D = 250 μA. This range indicates variability in turn-on point across units and temperature, requiring gate drive voltages ≥10 V to ensure full enhancement and minimal R_DS(on). Drive circuits must supply sufficient current to charge 23 nC total gate charge within required switching times, and IRFBC30ASPBF's 5.4 nC Q_gs defines the initial Miller plateau duration.

Can IRFBC30ASPBF replace IRFBC30A in existing designs?

Yes, IRFBC30ASPBF is the Pb-free version of IRFBC30A and shares identical electrical, thermal, and mechanical specifications - including V_DS = 600 V, R_DS(on) = 2.2 Ω, Q_g = 23 nC, and TO-220AB package dimensions. No layout or schematic changes are required; only soldering profile adjustments may be needed to accommodate Pb-free reflow. IRFBC30ASPBF maintains full functional and parametric equivalence with IRFBC30A per Vishay documentation S21-0868-Rev. C.