Vishay Siliconix IRFBC30PBF

Overview

IRFBC30PBF from Vishay Siliconix is a 600 V, 3.6 A N-channel power MOSFET in TO-220AB package, featuring 2.2 Ω R_DS(on) at V_GS = 10 V, 31 nC total gate charge, and repetitive avalanche rating. It serves as a high-voltage switching device in offline SMPS, AC motor controls, and DC-DC converters requiring ruggedness and fast turn-on/turn-off.

For engineers reviewing the IRFBC30PBF datasheet, IRFBC30PBF pinout, IRFBC30PBF application, or IRFBC30PBF equivalent, key selection criteria include its 600 V blocking capability, 2.2 Ω on-resistance at 10 V drive, 31 nC gate charge for gate driver sizing, avalanche energy rating (290 mJ single-pulse), and TO-220AB thermal performance (R_thJC = 1.7 °C/W).

Technical Context

This third-generation power MOSFET uses planar V-groove technology to achieve balanced conduction and switching losses. Its dynamic dV/dt rating (3.0 V/ns) and intrinsic body diode with 370–810 ns reverse recovery support snubberless operation in hard-switched topologies.

The device is optimized for unclamped inductive switching (UIS) with 290 mJ single-pulse avalanche energy and 7.4 mJ repetitive avalanche energy. Gate threshold voltage (2.0–4.0 V) and low gate leakage (< ±100 nA) ensure stable biasing across temperature and simplify drive circuit design.

Key Specifications

Pinout & Package

IRFBC30PBF is housed in a through-hole TO-220AB package with standard three-terminal layout: Drain (D) connected to tab, Source (S) and Gate (G) on leads. The metal tab is electrically connected to the Drain, requiring isolation when mounted to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP6NK60ZFP and FQP6N60C, IRFBC30PBF trades higher R_DS(on) for proven 290 mJ avalanche robustness and 3.0 V/ns dV/dt immunity-critical for reliability in unclamped inductive loads and noisy industrial environments.

Availability

IRFBC30PBF is available at Aetrix Electronics and suitable for offline AC-DC power supplies, industrial motor drives, and lighting ballasts requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFBC30PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRFBC30PBF belongs to Vishay's third-generation high-voltage power MOSFET family, designed specifically for demanding industrial and commercial power conversion applications where avalanche capability and dynamic stability are essential.

FAQ

What is the maximum continuous drain current for IRFBC30PBF at 100 °C case temperature?

The maximum continuous drain current for IRFBC30PBF is 2.3 A when the case temperature (T_C) is 100 °C. This derated value reflects thermal limitations under sustained operation and must be used with appropriate heatsinking. The IRFBC30PBF datasheet specifies this limit in the Absolute Maximum Ratings table, and it directly informs PCB layout and thermal design for industrial power supplies where ambient temperatures exceed 70 °C.

Does IRFBC30PBF have a specified peak diode recovery dV/dt rating?

Yes, IRFBC30PBF has a specified peak diode recovery dV/dt rating of 3.0 V/ns. This parameter is measured under defined test conditions (V_GS = 10 V, I_SD = 3.6 A, dI/dt = 100 A/μs) and ensures immunity to false turn-on during fast voltage transients across the body diode. This rating is critical for reliable operation in hard-switched bridge topologies and is explicitly documented in the Absolute Maximum Ratings section of the IRFBC30PBF datasheet.

Is IRFBC30PBF RoHS-compliant and halogen-free?

IRFBC30PBF is RoHS-compliant and lead (Pb)-free, as indicated by the "PbF" suffix. The variant IRFBC30PbF-BE3 (exact ordering row) is both RoHS-compliant and halogen-free. Vishay confirms material compliance per document 99912, and the IRFBC30PBF datasheet states that Pb-free terminations meet EU RoHS Directive 2011/65/EU. No exemption is applied, and full compliance documentation is available from Vishay's website.

What is the typical body diode reverse recovery time (t_rr) for IRFBC30PBF?

The typical body diode reverse recovery time (t_rr) for IRFBC30PBF is 370 ns, with a maximum of 810 ns, measured at T_J = 25 °C, I_F = 3.6 A, and dI/dt = 100 A/μs. This parameter directly affects switching loss and EMI in half-bridge and synchronous rectifier applications. The IRFBC30PBF datasheet provides t_rr in the Specifications table and illustrates its temperature dependence in Fig. 7.

Can IRFBC30PBF be used in parallel configurations?

Yes, IRFBC30PBF is designed for ease of paralleling due to its positive temperature coefficient of R_DS(on), which promotes natural current sharing among multiple devices. The datasheet explicitly lists "Ease of paralleling" as a feature, and thermal stability is further supported by low gate charge (31 nC) and matched threshold voltage (2.0–4.0 V). For reliable parallel operation, IRFBC30PBF requires matched gate resistors and symmetrical PCB layout to minimize loop inductance.