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Vishay Siliconix IRFBE20PBF-BE3
- Part No.:
- IRFBE20PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFBE20PBF-BE3.pdf
- Description:
- MOSFET N-CH 800V 1.8A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,539
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Product details
Overview
IRFBE20PBF-BE3 from Vishay Siliconix is an 800 V, 1.8 A N-channel power MOSFET in TO-220AB package, featuring 6.5 Ω RDS(on) at VGS = 10 V, 38 nC total gate charge, and repetitive avalanche rating up to 1.8 A - designed for high-voltage flyback and offline SMPS primary-side switching.
For engineers reviewing the IRFBE20PBF-BE3 datasheet, IRFBE20PBF-BE3 pinout, IRFBE20PBF-BE3 application, or IRFBE20PBF-BE3 equivalent, key selection criteria include its 800 V blocking capability, low gate charge for efficient hard-switching, rugged unclamped inductive switching performance, and RoHS-compliant/halogen-free construction per Vishay S21-0868-Rev. C.
Technical Context
This third-generation planar power MOSFET uses a ruggedized silicon process optimized for high-voltage transient robustness and stable RDS(on) over temperature. Its dynamic dV/dt rating of 2.0 V/ns and peak diode recovery dV/dt capability support reliable operation in fast-switching flyback and resonant converters.
The device integrates a monolithic body diode with 380–570 ns reverse recovery time (trr) and 0.94–1.4 μC Qrr, enabling controlled turn-off in inductive loads. Avalanche energy ratings (EAS = 180 mJ, EAR = 5.4 mJ) are validated under defined test conditions (L = 104 mH, IAS = 1.8 A), confirming suitability for unclamped inductive switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 800 V - supports primary-side switching in universal-input offline SMPS up to 380 V DC bus with safety margin. |
| RDS(on) @ VGS = 10 V | 6.5 Ω - determines conduction loss at 1.1 A ID; enables <1.5 W dissipation at full rated current with adequate heatsinking. |
| Qg | 38 nC - defines gate drive power requirement; compatible with standard 10–15 V PWM controllers without external buffers. |
| EAS | 180 mJ - specifies single-pulse avalanche energy handling; allows safe operation during output short-circuit or startup transients. |
| TJ Range | −55 °C to +150 °C - supports industrial and extended-temperature applications including metering and AC adapters. |
| dV/dt Rating | 2.0 V/ns - ensures immunity to parasitic turn-on in high-dV/dt environments such as transformer leakage spikes. |
Pinout & Package
IRFBE20PBF-BE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (RthJC = 2.3 °C/W) and compatibility with standard heatsink mounting using M3 screws (1.1 N·m torque).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives voltage-controlled signal to modulate channel conductivity; requires ≤ ±20 V swing and drives 38 nC total charge. |
| D (Drain) | High-side power terminal | Connected to drain metallization and package tab; carries full switched current and must be electrically isolated from heatsink unless referenced to system ground. |
| S (Source) | Power return / reference node | Serves as common reference for gate drive and current sensing; internal source inductance (LS = 7.5 nH) affects diode recovery behavior. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Rated for 1.8 A repetitive avalanche current (IAR) and 5.4 mJ energy (EAR) - enables reliable operation under sustained inductive fault conditions without derating. |
| Dynamic dV/dt immunity | 2.0 V/ns rated - prevents spurious turn-on during high-slew-rate voltage transients common in transformer-coupled topologies. |
| Fast switching with low Qg | 38 nC total gate charge and sub-100 ns combined switching times (td(on)+tr+td(off)+tf ≈ 110 ns) - reduces switching losses in 50–100 kHz SMPS designs. |
| Body diode with controlled Qrr | 0.94–1.4 μC reverse recovery charge and 380–570 ns trr - minimizes voltage overshoot and ringing during freewheeling in discontinuous conduction mode (DCM) flyback. |
Applications
| AC-DC Adapter Primary Switch | Flyback Converter Main Switch |
|---|---|
Use Scenario: 12–24 W universal-input offline adapter powering IoT sensors and smart home devices. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer via transformer; operates in DCM at 65 kHz. Use Value: 800 V VDS accommodates 375 V DC link with margin; 6.5 Ω RDS(on) limits conduction loss to <0.8 W at 1.1 A peak current. |
Use Scenario: Isolated 5 V/2 A auxiliary supply in industrial PLC power architecture. IC Role / Device Role / Timing Role: Main switching element in primary-side regulation flyback; handles 400 V reflected output voltage spikes. Use Value: Repetitive avalanche rating (IAR = 1.8 A) sustains operation during repeated output overloads without failure. |
| LED Driver High-Voltage Switch | Metering Power Supply Switch |
Use Scenario: Constant-current LED driver for street lighting with 230 V AC input and 72 V string voltage. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback topology; manages 800 V drain stress during zero-voltage switching transitions. Use Value: 2.0 V/ns dV/dt rating suppresses false triggering from transformer leakage-induced transients during ZVS edge transitions. |
Use Scenario: Auxiliary power supply in electricity meters requiring long-term reliability and wide temperature operation. IC Role / Device Role / Timing Role: Input-stage switch in capacitive-drop-derived isolated supply; endures 150 °C junction temperature during summer ambient extremes. Use Value: −55 °C to +150 °C operating range and halogen-free (BE3) construction meet IEC 62368-1 and environmental compliance for utility-grade equipment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NK80ZFP | 800 V, 7.5 Ω RDS(on), 34 nC Qg, TO-220FP (full-pack) package with insulated tab | Lower gate charge but higher on-resistance; same avalanche rating; smaller footprint due to FP variant | Preferred where board space is constrained and lower Qg improves light-load efficiency, but requires verification of thermal interface with insulated tab. |
| FQP8N80C | 800 V, 7.0 Ω RDS(on), 42 nC Qg, TO-220 package with non-isolated tab | Higher gate charge increases drive loss; identical voltage rating and avalanche capability; tab is electrically connected to drain | Acceptable where heatsink isolation is not required and layout accommodates drain-referenced mounting; verify thermal design with RthJC = 2.5 °C/W. |
Compared with STP8NK80ZFP and FQP8N80C, IRFBE20PBF-BE3 offers the lowest RDS(on) (6.5 Ω) among these 800 V TO-220 options, delivering superior conduction efficiency at 1.1 A, while maintaining identical avalanche robustness and RoHS/halogen-free compliance critical for metering and industrial deployments.
Availability
IRFBE20PBF-BE3 is available at Aetrix Electronics and suitable for AC-DC adapters, flyback converters, LED drivers, and utility metering power supplies requiring stable component supply, long-lifecycle assurance, and halogen-free compliance.
Supply support for IRFBE20PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and application-specific optimization.
The IRFBE20PBF-BE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for cost-effective, thermally efficient switching in offline power conversion systems up to 50 W.
FAQ
What is the maximum continuous drain current for IRFBE20PBF-BE3 at 100 °C case temperature?
The maximum continuous drain current for IRFBE20PBF-BE3 is 1.2 A when the case temperature (TC) is 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. The IRFBE20PBF-BE3 must be mounted on an appropriately sized heatsink to sustain this current continuously.
Is IRFBE20PBF-BE3 pin-compatible with the legacy IRFBE20PBF?
Yes, IRFBE20PBF-BE3 is mechanically and electrically pin-compatible with IRFBE20PBF - both use the TO-220AB package with identical pinout (G-D-S) and electrical specifications. The BE3 suffix denotes halogen-free and lead-free construction per JEDEC J-STD-609, while maintaining full functional equivalence. The IRFBE20PBF-BE3 can be used as a direct replacement in existing designs without layout changes.
Does IRFBE20PBF-BE3 support avalanche operation in repetitive mode?
Yes, IRFBE20PBF-BE3 is explicitly rated for repetitive avalanche operation with IAR = 1.8 A and EAR = 5.4 mJ under defined conditions (pulse width limited by TJ(max)). This capability is validated per Vishay's test methodology (Fig. 12) and enables robust performance in circuits subject to sustained inductive energy dissipation, such as flyback converters during overload. The IRFBE20PBF-BE3 data sheet confirms this in the Absolute Maximum Ratings table.
What is the typical body diode forward voltage of IRFBE20PBF-BE3 at 1.8 A and 25 °C?
The typical body diode forward voltage (VSD) of IRFBE20PBF-BE3 is 1.4 V at TJ = 25 °C and IS = 1.8 A with VGS = 0 V, as stated in the Drain-Source Body Diode Characteristics section. This value directly impacts conduction loss during freewheeling phases in DCM flyback operation. The IRFBE20PBF-BE3 body diode exhibits a soft recovery characteristic with trr = 380–570 ns, reducing EMI generation.
Can IRFBE20PBF-BE3 be paralleled with identical units for higher current handling?
Yes, IRFBE20PBF-BE3 is designed for ease of paralleling, as highlighted in its Features list. Its positive temperature coefficient of RDS(on) promotes current sharing across multiple devices, and low gate charge (38 nC) simplifies synchronized gate drive. When paralleling IRFBE20PBF-BE3 units, ensure matched PCB layout, individual gate resistors, and symmetrical thermal paths to maintain balance. The IRFBE20PBF-BE3 datasheet confirms this capability without requiring external balancing components.
IRFBE20PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 6.5Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 530 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 54W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFBE20PBF-BE3 FAQ
1.How can I place an order for IRFBE20PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFBE20PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFBE20PBF-BE3 reliable?
The price and inventory of IRFBE20PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBE20PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFBE20PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBE20PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFBE20PBF-BE3?
IRFBE20PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFBE20PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFBE20PBF-BE3?
For technical support, including IRFBE20PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBE20PBF-BE3 requirements.
6.How does Aetrix verify that IRFBE20PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFBE20PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBE20PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFBE20PBF-BE3?
All IRFBE20PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBE20PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFBE20PBF-BE3 part is unused and in its original packaging.
Return procedure for IRFBE20PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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