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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBE30PBF-BE3

Name: IRFBE30PBF-BE3
Brand: Vishay Siliconix
SKU: IRFBE30PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBE30PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFBE30PBF-BE3.pdf

Description:: MOSFET N-CH 800V 4.1A TO220AB

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Product details

Overview

IRFBE30PBF-BE3 from Vishay Siliconix is a high-voltage N-channel power MOSFET in TO-220AB package, rated for 800 V drain-source voltage, 4.1 A continuous drain current at 25 °C, and 3.0 Ω on-resistance at V_GS = 10 V. It features repetitive avalanche capability (13 mJ), fast switching (12 ns turn-on delay), and robust diode recovery (480–720 ns trr), suited for offline SMPS flyback and clamp circuits.

For engineers reviewing the IRFBE30PBF-BE3 datasheet, IRFBE30PBF-BE3 pinout, IRFBE30PBF-BE3 application, or IRFBE30PBF-BE3 equivalent, key selection criteria include its 800 V blocking rating, 78 nC total gate charge, TO-220AB thermal performance (R_thJC = 1.0 °C/W), and lead-free/halogen-free compliance per Vishay S21-0868-Rev. C.

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family, optimized for ruggedness and cost-effective high-voltage switching. Its design supports unclamped inductive switching with validated 260 mJ single-pulse avalanche energy and 4.1 A repetitive avalanche current under defined conditions (V_DD = 50 V, L = 29 mH).

The IRFBE30PBF-BE3 integrates a low-leakage body diode (I_SD ≤ 4.1 A, dI/dt ≤ 100 A/μs) with controlled reverse recovery (Q_rr = 1.8–2.7 μC) and peak diode recovery dv/dt rating of 2.0 V/ns - critical for minimizing voltage overshoot in snubberless clamp topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in universal-input offline converters up to 380 V DC bus with margin.
R_DS(on)	3.0 Ω @ V_GS = 10 V - determines conduction loss in high-voltage, low-current applications like auxiliary supplies.
Q_g	78 nC - defines gate drive power requirement and influences switching speed in hard-switched topologies.
E_AS	260 mJ - enables reliable operation under transient overloads without external snubbers in flyback designs.
trr	480–720 ns - impacts switching losses and EMI in discontinuous conduction mode (DCM) flyback converters.
T_J Range	−55 to +150 °C - ensures stable operation across industrial ambient and self-heating conditions.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.0 °C/W junction-to-case thermal resistance, and 62 °C/W max junction-to-ambient (no heatsink).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; 9.6 nC gate-source charge enables simple driver IC interface.
D (Drain)	High-side switch node	Connected to internal die substrate and metal tab; requires electrical isolation when mounted to heatsink.
S (Source)	Power return/reference	Serves as common reference for gate drive and current sensing; internal source inductance LS = 7.5 nH affects switching waveform fidelity.

Key Features

Feature	Design Value
Repetitive avalanche rated	Validated for 4.1 A I_AR and 13 mJ E_AR - enables robustness against inductive kickback without derating in clamp circuits.
Dynamic dV/dt rating	2.0 V/ns peak diode recovery dv/dt - suppresses false turn-on during high-slew-rate transitions in high-frequency flyback.
Fast switching	12 ns t_d(on), 33 ns t_r, 82 ns t_d(off), 30 ns t_f - reduces transition losses in 65–130 kHz SMPS designs.
Ease of paralleling	Positive R_DS(on) temperature coefficient - ensures current sharing stability when multiple IRFBE30PBF-BE3 devices are used in parallel.

Applications

Offline Flyback Converter	Clamp-Type SMPS
Use Scenario: Primary-side switch in universal-input (85–265 V AC) 15–30 W auxiliary power supply. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via transformer primary winding. Use Value: 800 V V_DS rating accommodates reflected output voltage plus leakage spike; 260 mJ E_AS eliminates need for external RCD clamp in low-power designs.	Use Scenario: Active clamp flyback or forward converter operating at 100 kHz with 400 V DC bus. IC Role / Device Role / Timing Role: Main switch handling high-voltage, medium-current pulses with controlled turn-off. Use Value: 4.1 A I_D and 3.0 Ω R_DS(on) balance conduction and switching losses; 480–720 ns trr minimizes dead-time-induced losses.
Industrial AC-DC Adapter	LED Driver Power Stage
Use Scenario: Input-stage switch in sealed IP67-rated 24 V/2 A industrial adapter exposed to wide ambient (−40 to +85 °C). IC Role / Device Role / Timing Role: Primary-side MOSFET managing line transients and surge immunity. Use Value: −55 to +150 °C T_J range and 150 °C max storage ensure reliability; RoHS-compliant Pb-free/halogen-free (BE3) variant meets environmental mandates.	Use Scenario: Constant-voltage stage in outdoor LED streetlight driver with high-line input and thermal cycling. IC Role / Device Role / Timing Role: High-side switch regulating bulk DC conversion before buck/boost stage. Use Value: Repetitive avalanche rating protects against LED string open-circuit faults; 78 nC Q_g allows compatibility with low-power gate drivers.

Offline Flyback Converter

Clamp-Type SMPS

Use Scenario: Primary-side switch in universal-input (85–265 V AC) 15–30 W auxiliary power supply.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via transformer primary winding.

Use Value: 800 V V_DS rating accommodates reflected output voltage plus leakage spike; 260 mJ E_AS eliminates need for external RCD clamp in low-power designs.

Use Scenario: Active clamp flyback or forward converter operating at 100 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: Main switch handling high-voltage, medium-current pulses with controlled turn-off.

Use Value: 4.1 A I_D and 3.0 Ω R_DS(on) balance conduction and switching losses; 480–720 ns trr minimizes dead-time-induced losses.

Industrial AC-DC Adapter

LED Driver Power Stage

Use Scenario: Input-stage switch in sealed IP67-rated 24 V/2 A industrial adapter exposed to wide ambient (−40 to +85 °C).

IC Role / Device Role / Timing Role: Primary-side MOSFET managing line transients and surge immunity.

Use Value: −55 to +150 °C T_J range and 150 °C max storage ensure reliability; RoHS-compliant Pb-free/halogen-free (BE3) variant meets environmental mandates.

Use Scenario: Constant-voltage stage in outdoor LED streetlight driver with high-line input and thermal cycling.

IC Role / Device Role / Timing Role: High-side switch regulating bulk DC conversion before buck/boost stage.

Use Value: Repetitive avalanche rating protects against LED string open-circuit faults; 78 nC Q_g allows compatibility with low-power gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V V_DS, 7.5 Ω R_DS(on), 38 nC Q_g, TO-220FP package (full-pack)	Higher on-resistance increases conduction loss; lower Q_g improves switching efficiency but reduces ruggedness margin	Preferable where gate drive power is constrained and avalanche stress is minimal
FQP8N80C	800 V V_DS, 3.5 Ω R_DS(on), 75 nC Q_g, TO-220 package with non-isolated tab	Similar R_DS(on) and Q_g, but no specified repetitive avalanche rating or dv/dt spec	Acceptable for cost-sensitive designs where full avalanche validation is not required

Compared with STP8NK80ZFP and FQP8N80C, the IRFBE30PBF-BE3 offers superior ruggedness (260 mJ E_AS, 2.0 V/ns dv/dt) and verified repetitive avalanche operation - critical for clamp-free, high-reliability offline power supplies.

Availability

IRFBE30PBF-BE3 is available at Aetrix Electronics and suitable for offline flyback converters, industrial AC-DC adapters, LED driver power stages, and clamp-type SMPS requiring stable component supply and long-term manufacturability.

Supply support for IRFBE30PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedness.

The IRFBE30PBF-BE3 belongs to Vishay's third-generation high-voltage power MOSFET product line, engineered for cost-effective, high-reliability switching in offline AC-DC power conversion systems.

FAQ

What is the maximum continuous drain current rating for IRFBE30PBF-BE3 at 100 °C case temperature?

The IRFBE30PBF-BE3 has a continuous drain current rating of 2.6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied in thermally constrained layouts without forced airflow or large heatsinks. Designers should verify junction temperature using R_thJC = 1.0 °C/W and actual power dissipation to ensure safe operation below 150 °C.

Does IRFBE30PBF-BE3 support logic-level gate drive?

No, IRFBE30PBF-BE3 is not a logic-level MOSFET. Its gate-source threshold voltage ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. It requires a 10 V gate drive for specified on-resistance and switching performance. Using 5 V logic-level drive results in significantly higher R_DS(on) and unreliable turn-on, especially at elevated temperatures.

Is IRFBE30PBF-BE3 pin-compatible with earlier IRFBE30 variants?

Yes, IRFBE30PBF-BE3 maintains identical TO-220AB mechanical footprint, pinout (G-D-S), and thermal characteristics as legacy IRFBE30PbF and IRFBE30 parts. The BE3 suffix denotes lead-free and halogen-free construction per Vishay's material compliance standards, with no electrical or packaging changes affecting PCB layout or assembly.

What is the body diode reverse recovery charge (Q_rr) specification for IRFBE30PBF-BE3?

The IRFBE30PBF-BE3 specifies Q_rr = 1.8–2.7 μC under test conditions of T_J = 25 °C, I_F = 4.1 A, and dI/dt = 100 A/μs. This parameter directly impacts turn-off losses and EMI generation in flyback converters operating in discontinuous conduction mode, and must be accounted for in snubber design and driver sizing.

Can IRFBE30PBF-BE3 be used in parallel configurations?

Yes, IRFBE30PBF-BE3 is designed for ease of paralleling due to its positive temperature coefficient of R_DS(on), which promotes natural current sharing among devices. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling to ensure uniform junction temperature rise across all units.

IRFBE30PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 3Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFBE30PBF-BE3 FAQ

1.How can I place an order for IRFBE30PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBE30PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBE30PBF-BE3 reliable?

The price and inventory of IRFBE30PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBE30PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFBE30PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBE30PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBE30PBF-BE3?

IRFBE30PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBE30PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBE30PBF-BE3?

For technical support, including IRFBE30PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBE30PBF-BE3 requirements.

6.How does Aetrix verify that IRFBE30PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFBE30PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBE30PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFBE30PBF-BE3?

All IRFBE30PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBE30PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBE30PBF-BE3 part is unused and in its original packaging.

Return procedure for IRFBE30PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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