Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRFBF20STRRPBF

Part No.:
IRFBF20STRRPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRFBF20STRRPBF.pdf
Description:
MOSFET N-CH 900V 1.7A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,457

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFBF20STRRPBF from Vishay Siliconix is a 900 V, 8.0 Ω N-channel surface-mount power MOSFET in D2PAK (TO-263) package, rated for 1.7 A continuous drain current at 25 °C and fully avalanche-rated to 180 mJ, designed for high-voltage flyback and offline SMPS primary-side switching.

For engineers reviewing the IRFBF20STRRPBF datasheet, IRFBF20STRRPBF pinout, IRFBF20STRRPBF application, or IRFBF20STRRPBF equivalent, key selection criteria include its 900 V VDS, 38 nC total gate charge, 150 °C max junction temperature, dynamic dV/dt rating of 1.5 V/ns, and D2PAK thermal performance with RthJC = 2.3 °C/W.

Technical Context

This device belongs to Vishay's third-generation high-voltage power MOSFET family optimized for ruggedness and fast switching in isolated AC/DC converters. Its design integrates a fully rated avalanche capability and low-profile D2PAK packaging for improved thermal transfer in space-constrained board layouts.

The IRFBF20STRRPBF uses planar vertical DMOS architecture with optimized gate charge distribution (Qgd = 21 nC, Qgs = 4.7 nC), enabling controlled turn-on/turn-off transitions under high dV/dt stress. It supports unclamped inductive switching up to IAS = 1.7 A with pulse width limited by TJ(max) = 150 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VDS900 V - Withstands full mains-referred voltage spikes in 230 VAC offline applications without derating.
RDS(on) @ VGS = 10 V8.0 Ω - Enables low conduction loss in low-duty-cycle, high-VDS topologies like flyback.
Qg (max)38 nC - Determines gate drive power requirement and switching speed trade-off in 50–100 kHz SMPS designs.
ID (continuous) @ TC = 25 °C1.7 A - Specifies maximum steady-state current with heatsink; derates linearly to 1.1 A at 100 °C case.
EAS (single-pulse)180 mJ - Guarantees safe operation during transient overloads or transformer leakage energy dissipation.
dV/dt (peak diode recovery)1.5 V/ns - Confirms robustness against parasitic turn-on during high-speed body diode commutation.
TJ operating range–55 to +150 °C - Supports industrial and extended-temperature power supply deployments.

Pinout & Package

IRFBF20STRRPBF is housed in a D2PAK (TO-263AB) surface-mount package with exposed thermal pad on the drain side, offering low RthJC = 2.3 °C/W for efficient heat transfer to PCB copper.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control terminalAccepts 10 V logic-level drive; threshold VGS(th) = 2.0–4.0 V ensures reliable turn-on with standard PWM controllers.
D (Drain)High-side power switch nodeInternally connected to thermal pad; must be routed to large copper pour for thermal management and high-voltage clearance.
S (Source)Reference node / return pathProvides ground reference for gate drive; source inductance directly impacts switching stability and dV/dt immunity.

Key Features

FeatureDesign Value
Fully avalanche-rated180 mJ single-pulse energy handling enables robustness against transformer reset failures without external snubbers.
Dynamic dV/dt rating1.5 V/ns peak diode recovery dV/dt prevents false triggering during high-speed body diode reverse recovery.
150 °C maximum junction temperatureAllows sustained operation in enclosed, convection-cooled industrial power supplies without forced air.
Low-profile D2PAK packageEnables high-power density layout with 2.0 W typical power dissipation and superior thermal coupling vs. through-hole alternatives.
RoHS-compliant, lead-freeMeets global environmental compliance requirements with Pb-free terminations and halogen-free construction.

Applications

Industrial Flyback ConvertersLED Driver Primary Switch

Use Scenario: 230 VAC-input, 30 W isolated flyback supplying 24 V/1.25 A to PLC I/O modules in factory automation cabinets.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer during each PWM cycle; operates at 65 kHz with discontinuous conduction mode.

Use Value: 900 V VDS margin accommodates 2× mains surge plus reflected output voltage; 8.0 Ω RDS(on) limits conduction loss to <1.2 W at full load.

Use Scenario: Constant-voltage LED driver powering 12 V, 2 A signage arrays in outdoor lighting enclosures with wide ambient temperature range.

IC Role / Device Role / Timing Role: High-side switching element in quasi-resonant flyback topology; handles repetitive 1.7 A pulsed drain current during startup and dimming transients.

Use Value: Fully rated avalanche capability absorbs leakage inductance spikes during zero-voltage switching transitions, eliminating need for clamping circuits.

Offline AC/DC AdaptersHigh-Voltage DC-DC Isolators

Use Scenario: Universal-input (90–264 VAC), 15 W wall adapter for medical sensor interfaces requiring reinforced isolation and low standby power.

IC Role / Device Role / Timing Role: Primary switch in primary-side regulated flyback; driven by integrated controller with valley-switching for efficiency optimization.

Use Value: 38 nC Qg balances gate drive loss and switching speed-enabling >85% efficiency at 230 VAC full load while maintaining EMI compliance.

Use Scenario: 400 VDC input to 24 VDC isolated output converter in battery energy storage system (BESS) monitoring units.

IC Role / Device Role / Timing Role: High-side switch in forward or active-clamp forward topology; sustains 1.1 A continuous current at elevated ambient temperatures up to 70 °C.

Use Value: 150 °C TJ(max) and 2.3 °C/W RthJC allow stable operation without heatsink in sealed, thermally constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP9NK90ZFP900 V, 8.5 Ω RDS(on), 36 nC Qg, TO-220FP packageThrough-hole mounting; higher RthJA (65 °C/W) requires larger heatsink for same power dissipationPreferred where manual assembly or legacy through-hole layout is required; lower gate charge reduces driver loss.
IXTP50N10D21000 V, 0.22 Ω RDS(on), 110 nC Qg, TO-220 packageHigher voltage rating but significantly higher conduction loss at low current; unsuitable for low-ID flyback primariesOnly suitable when 1000 V rating is mandatory and gate drive capability supports 110 nC; not drop-in due to higher capacitance and thermal profile.

Compared with STP9NK90ZFP and IXTP50N10D2, the IRFBF20STRRPBF offers optimal balance of voltage margin, thermal performance in surface-mount form factor, and gate drive compatibility for compact, high-efficiency flyback designs-without requiring layout redesign or additional thermal mass.

Availability

IRFBF20STRRPBF is available at Aetrix Electronics and suitable for industrial flyback converters, LED driver primary switches, and offline AC/DC adapters requiring stable component supply and long-term manufacturability.

Supply support for IRFBF20STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedness.

The IRFBF20STRRPBF belongs to Vishay's high-voltage power MOSFET product line engineered for primary-side switching in isolated AC/DC and DC/DC converters demanding avalanche robustness and thermal efficiency.

FAQ

What is the maximum continuous drain current rating for IRFBF20STRRPBF at 100 °C case temperature?

The IRFBF20STRRPBF has a maximum continuous drain current of 1.1 A at TC = 100 °C, per its absolute maximum ratings table. This reflects linear derating from 1.7 A at 25 °C using the specified 0.43 W/°C factor. Designers must verify PCB copper area and airflow to maintain this case temperature under full-load conditions. The IRFBF20STRRPBF datasheet confirms this value applies to both IRFBF20S and IRFBF20STRRPBF variants.

Does IRFBF20STRRPBF support logic-level gate drive?

No, IRFBF20STRRPBF is not a logic-level MOSFET. Its gate threshold voltage is specified as 2.0–4.0 V, but it requires VGS = 10 V to achieve the rated RDS(on) of 8.0 Ω. Driving it with 5 V logic will result in significantly higher on-resistance and conduction loss. The IRFBF20STRRPBF must be paired with a dedicated gate driver or controller capable of delivering ≥10 V gate swing for full performance.

What is the thermal resistance from junction to case (RthJC) for IRFBF20STRRPBF?

The IRFBF20STRRPBF has a maximum junction-to-case thermal resistance of 2.3 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes proper soldering of the exposed drain pad to a minimum 1"² FR-4 PCB copper area. The IRFBF20STRRPBF's D2PAK package leverages this low RthJC to dissipate up to 54 W at TC = 25 °C, making it suitable for high-power-density applications where heatsink space is limited.

Is IRFBF20STRRPBF RoHS-compliant and halogen-free?

Yes, IRFBF20STRRPBF is RoHS-compliant and halogen-free. The "PbF" suffix denotes lead-free termination, and Vishay documentation (S20-0238-Rev. C) explicitly states material categorization complies with Directive 2011/65/EU and halogen-free standards per Vishay document 99912. The IRFBF20STRRPBF meets JEDEC J-STD-609A Class 1 for moisture sensitivity and is qualified for reflow soldering up to 300 °C peak for 10 seconds.

Can IRFBF20STRRPBF replace IRFBF20SPbF in an existing design?

Yes, IRFBF20STRRPBF is functionally identical to IRFBF20SPbF and serves as its tape-and-reel packaged version-both share identical electrical specifications, D2PAK package, and RoHS-compliant construction. The "TRR" suffix indicates 800-unit tape-and-reel packaging, while "PbF" denotes lead-free finish. No layout or schematic changes are needed when substituting IRFBF20STRRPBF for IRFBF20SPbF in production builds.

IRFBF20STRRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
900 V
Current - Continuous Drain (Id) @ 25°C:
1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
490 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.1W (Ta), 54W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

IRFBF20STRRPBF FAQ

1.How can I place an order for IRFBF20STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBF20STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBF20STRRPBF reliable?

The price and inventory of IRFBF20STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBF20STRRPBF is usually 5 days.

3.What payment methods are accepted for IRFBF20STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBF20STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBF20STRRPBF?

IRFBF20STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBF20STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBF20STRRPBF?

For technical support, including IRFBF20STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBF20STRRPBF requirements.

6.How does Aetrix verify that IRFBF20STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRFBF20STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBF20STRRPBF meets industry standards.

7.What is the process for return or replacement of IRFBF20STRRPBF?

All IRFBF20STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFBF20STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBF20STRRPBF part is unused and in its original packaging.

Return procedure for IRFBF20STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFBF20STRRPBF Tags

  • IRFBF20STRRPBF
  • IRFBF20STRRPBF PDF
  • IRFBF20STRRPBF Datasheet
  • IRFBF20STRRPBF Specifications
  • IRFBF20STRRPBF Images
  • Vishay Siliconix
  • Vishay Siliconix IRFBF20STRRPBF
  • Buy IRFBF20STRRPBF
  • IRFBF20STRRPBF Price
  • IRFBF20STRRPBF Distributor
  • IRFBF20STRRPBF Supplier
  • IRFBF20STRRPBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER