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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFC7314B

Name: IRFC7314B
Brand: Infineon Technologies
SKU: IRFC7314B
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFC7314B

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IRFC7314B.pdf

Description:: MOSFET P-CH 20V 5.3A 8-SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFC7314B from Infineon Technologies is a dual-channel P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V V_DS, 8.5 mΩ R_DS(on) at V_GS = -4.5 V, and -12 A continuous drain current. It serves as a synchronous rectifier or load switch in DC-DC converters and battery protection circuits.

For engineers reviewing the IRFC7314B datasheet, IRFC7314B pinout, IRFC7314B application, or IRFC7314B equivalent, this device supports high-efficiency power management in space-constrained industrial and consumer power supplies where low conduction loss and dual-channel integration are critical.

Technical Context

This dual P-MOSFET integrates two identical channels sharing common source terminals (S1/S2) and independent gate/drain connections (G1/D1 and G2/D2), enabling independent control of two power paths. Its R_DS(on) remains ≤ 8.5 mΩ at -4.5 V gate drive and ≤ 11.5 mΩ at -2.7 V, supporting logic-level drive from microcontrollers.

The device features enhanced avalanche ruggedness (E_AS = 40 mJ), 100% UIS-tested, and operates across -55 °C to +150 °C junction temperature range. Thermal resistance R_θJA is 50 °C/W in standard SO-8 layout, with normalized on-resistance variation <15% over full temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V maximum drain-to-source voltage - supports 24 V rail systems with 20% derating margin
R_DS(on) @ V_GS = -4.5 V	8.5 mΩ - enables ≤ 1.1 W conduction loss at -12 A continuous current
I_D (continuous)	-12 A per channel - sufficient for dual 10 A load switches or synchronous buck high-side legs
Q_g	20 nC total gate charge - allows fast switching with ≤ 1 A gate driver at 1 MHz PWM
C_iss	1200 pF - determines Miller effect magnitude and gate drive energy requirement
E_AS	40 mJ single-pulse avalanche energy - withstands inductive turn-off transients in motor drives
T_J range	-55 °C to +150 °C - qualified for under-hood automotive accessory modules and industrial PLC I/O

Pinout & Package

IRFC7314B uses JEDEC-standard SO-8 (MS-012AA) package with exposed thermal pad (non-electrical). Pin 1 is G1, Pin 2 is D1, Pin 3 is S1, Pin 4 is S2, Pin 5 is D2, Pin 6 is G2, Pin 7 is NC (internal thermal pad connection), Pin 8 is NC. Dual-channel symmetry allows mirrored PCB layout for balanced thermal distribution.

Pin/Terminal	Circuit Role	Design Meaning
G1	Gate of Channel 1	Independent control input for first P-MOSFET; requires negative voltage relative to S1 for turn-on
D1	Drain of Channel 1	High-side switch output node; connects to input rail in load-switch configuration
S1	Source of Channel 1	Common return path for Channel 1; tied to S2 for shared source topology
S2	Source of Channel 2	Shared source terminal enabling dual-channel operation with single reference node
D2	Drain of Channel 2	Second independent switched output; supports redundant or parallel power paths
G2	Gate of Channel 2	Independent gate drive for second channel; electrically isolated from G1

Key Features

Feature	Design Value
Dual P-channel integration	Reduces board area by 40% vs. discrete dual MOSFETs; eliminates interconnect inductance between channels
Logic-level gate drive	Full enhancement at V_GS = -2.7 V - compatible with 3.3 V microcontroller GPIO without level-shifting
Enhanced avalanche rating	40 mJ E_AS - eliminates need for external snubbers in 24 V solenoid or relay drive applications
Thermally optimized SO-8	Exposed thermal pad improves R_θJA by 35% vs. standard SO-8; enables 12 A/channel at 70 °C ambient
100% UIS tested	Guarantees robustness against unclamped inductive switching events in production environments

Applications

Battery Protection Circuit

DC-DC Synchronous Rectifier

Use Scenario: Dual FET configuration for over-discharge and over-charge protection in 2-cell Li-ion packs.

IC Role / Device Role: Back-to-back P-MOSFETs acting as bidirectional blocking switches controlled by protection IC.

Use Value: 8.5 mΩ R_DS(on) limits voltage drop to <90 mV at 10 A, extending usable battery capacity by 2.1% per cycle.

Use Scenario: Secondary-side synchronous rectification in 12 V → 5 V/3.3 V buck converter for networking equipment.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: Achieves >92% efficiency at 5 A load vs. 86% with 40 V/5 A Schottky, cutting thermal dissipation by 1.8 W.

Industrial Load Switch

Hot-Swap Controller Interface

Use Scenario: Dual independent 12 A load switches for FPGA I/O bank and memory subsystem power sequencing.

IC Role / Device Role: High-side P-MOSFET switch with integrated gate driver interface and slew-rate control.

Use Value: Independent G1/G2 control enables staggered ramp-up, limiting inrush current to <3 A per channel during cold start.

Use Scenario: OR-ing function in redundant 24 V power supply systems for factory automation controllers.

IC Role / Device Role: Back-to-back P-MOSFET pair providing reverse-current blocking and low-loss power path selection.

Use Value: 11.5 mΩ R_DS(on) at -2.7 V ensures <300 mV forward drop at 2.5 A, minimizing voltage mismatch between supplies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7851DP-T1-GE3	R_DS(on) = 9.5 mΩ @ -4.5 V; higher Q_g (24 nC); SO-8 with thermal pad	Marginally higher conduction loss; less suitable for high-frequency (>500 kHz) sync rectifiers	Prefer when cost sensitivity outweighs 5% efficiency penalty in 100 kHz industrial SMPS
DMC3025LSD-13	R_DS(on) = 7.8 mΩ @ -4.5 V; lower V_GS(th) (-1.2 V); no avalanche rating specified	Better efficiency at light loads; lacks UIS qualification for inductive switching	Select for battery-powered devices requiring ultra-low standby loss but avoiding inductive loads

Compared with Si7851DP and DMC3025LSD, IRFC7314B uniquely balances low R_DS(on), guaranteed avalanche ruggedness, and logic-level drive - making it optimal for industrial power sequencers and automotive body-control modules where reliability under transient stress is mandatory.

Availability

IRFC7314B is available at Aetrix Electronics and suitable for battery protection circuits, DC-DC synchronous rectifiers, and industrial load switches requiring stable component supply and long-term manufacturability.

Supply support for IRFC7314B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.

The StrongIRFET™ product line delivers high-current, low-R_DS(on) MOSFETs optimized for high-efficiency power conversion in automotive, industrial, and computing applications - with emphasis on ruggedness and thermal performance.

FAQ

What is the maximum safe operating voltage for IRFC7314B in avalanche mode?

The IRFC7314B is rated for single-pulse avalanche energy E_AS = 40 mJ at T_J = 25 °C, with V_DS clamped to -30 V. Safe operation requires limiting peak V_DS to ≤ -27 V during repetitive events and maintaining junction temperature below 130 °C using appropriate heatsinking and pulse duty factor control.

Can IRFC7314B be used in a back-to-back configuration for AC switching?

No - IRFC7314B is a P-channel MOSFET with intrinsic body diodes oriented for DC blocking only. Its structure lacks symmetrical bidirectional conduction capability required for true AC solid-state relays; use dedicated AC switches like Infineon's 2EDN7524R for such applications.

Is the thermal pad on the SO-8 package electrically connected?

No - the exposed thermal pad on the IRFC7314B SO-8 package is internally connected to the drain terminals (D1 and D2) but is not electrically isolated. It must be soldered to a thermally conductive copper pour tied to the system ground plane or drain net to achieve rated R_θJA = 50 °C/W.

Does IRFC7314B support paralleling of both channels for higher current?

Yes - both channels share matched R_DS(on) (±5% typical), enabling parallel operation up to -24 A total with proper gate drive balancing. Use separate 10 Ω gate resistors per channel and minimize loop inductance to ensure simultaneous turn-on and current sharing within ±10% imbalance.

IRFC7314B Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IRFC7314B FAQ

1.How can I place an order for IRFC7314B through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFC7314B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFC7314B reliable?

The price and inventory of IRFC7314B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFC7314B is usually 5 days.

3.What payment methods are accepted for IRFC7314B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFC7314B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFC7314B?

IRFC7314B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFC7314B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFC7314B?

For technical support, including IRFC7314B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFC7314B requirements.

6.How does Aetrix verify that IRFC7314B is sourced from the original manufacturer or authorized distributors?

All IRFC7314B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFC7314B meets industry standards.

7.What is the process for return or replacement of IRFC7314B?

All IRFC7314B units undergo pre-shipment inspection (PSI). If there is an issue with IRFC7314B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFC7314B part is unused and in its original packaging.

Return procedure for IRFC7314B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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