Vishay Siliconix IRFD9110

Overview

IRFD9110 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in HVMDIP (4-pin DIP) package, rated for -100 V V_DS, 1.2 Ω R_DS(on) at V_GS = -10 V, and 175 °C maximum junction temperature. It delivers 1.3 W power dissipation with dual-drain thermal path and supports repetitive avalanche operation up to -0.7 A, suited for DC-DC converter high-side switches and motor control H-bridge legs.

For engineers reviewing the IRFD9110 datasheet, IRFD9110 pinout, IRFD9110 application, or IRFD9110 equivalent, key selection criteria include its -100 V blocking capability, low gate charge (8.7 nC), fast switching (10 ns turn-on delay), rugged unclamped inductive switching performance, and compatibility with automated insertion and end-stacking PCB assembly.

Technical Context

This P-channel MOSFET operates as a high-voltage, medium-current switching device with integrated body diode optimized for reverse recovery (t_rr = 82–160 ns, Q_rr = 0.15–0.30 μC). Its gate threshold voltage range (-2.0 to -4.0 V) ensures reliable turn-on with standard logic-level drive while maintaining noise immunity.

The device features dynamic dV/dt rating (-5.5 V/ns), repetitive avalanche energy rating (0.13 mJ), and linear derating factor (0.0083 W/°C), enabling robust operation in inductive load switching and flyback topologies without external snubbers under defined conditions.

Key Specifications

Pinout & Package

HVMDIP (High-Voltage Mini-DIP) package: 4-pin through-hole, 0.1" pin pitch, dual drain leads (pins 1 & 4) serving as common thermal and current paths; source (pin 2), gate (pin 3). Molded plastic case with 7.87–8.38 mm length, 6.86–7.36 mm height, and 7.62–10.79 mm width.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRFD9110, IRFD120PbF trades faster switching for lower conduction loss, while STP12PF06 sacrifices voltage headroom for improved R_DS(on)-making IRFD9110 optimal for 80 V-class systems needing balanced speed, ruggedness, and thermal performance.

Availability

IRFD9110 is available at Aetrix Electronics and suitable for DC-DC converters, motor control H-bridges, and PLC output modules requiring stable component supply, long-term industrial lifecycle support, and Pb-free compliance.

Supply support for IRFD9110 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.

The IRFD9110 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for cost-effective, machine-insertable solutions in industrial power switching where avalanche robustness and thermal manageability are critical.

FAQ

What is the maximum continuous drain current for the IRFD9110 at 100 °C ambient temperature?

The IRFD9110 supports -0.49 A continuous drain current at T_A = 100 °C, derived from its 1.3 W maximum power dissipation and 120 °C/W junction-to-ambient thermal resistance. This value assumes adequate PCB copper area for heat spreading and reflects linear derating from the 25 °C rating of -0.70 A. The IRFD9110 must be operated within this limit to avoid exceeding 175 °C maximum junction temperature.

Does the IRFD9110 have an integrated body diode, and what are its key recovery characteristics?

Yes, the IRFD9110 includes an integral reverse p-n junction body diode. Its key recovery specs are t_rr = 82–160 ns and Q_rr = 0.15–0.30 μC at T_J = 25 °C, I_F = -4.0 A, and dI/dt = 100 A/μs. These values indicate moderate reverse recovery behavior suitable for non-synchronous flyback and freewheeling applications-but not ultra-high-frequency synchronous rectification. The IRFD9110 body diode is rated for -0.70 A continuous and -5.6 A pulsed forward current.

Can the IRFD9110 be used in avalanche mode, and what are its rated energy limits?

Yes, the IRFD9110 is explicitly rated for repetitive avalanche operation: I_AR = -0.7 A and E_AR = 0.13 mJ under specified test conditions (V_DD = -25 V, L = 52 mH, R_g = 25 Ω). It also supports single-pulse avalanche energy up to 140 mJ. These ratings allow safe operation in inductive switching applications like relay drivers and motor controls without external snubbers-provided pulse width and duty cycle remain within datasheet limits. The IRFD9110's avalanche capability is validated and documented in Vishay's S21-0887-Rev. D.

What is the gate threshold voltage range for the IRFD9110, and how does it affect drive requirements?

The IRFD9110 has a gate-source threshold voltage range of -2.0 V to -4.0 V (V_GS(th)) at I_D = -250 μA. This means the device begins conducting significantly above -2.0 V and is fully enhanced near -4.0 V. For reliable saturation, V_GS ≤ -10 V is recommended-delivering 1.2 Ω R_DS(on). Logic-level drive (e.g., -5 V) yields higher on-resistance and should be verified per application. The IRFD9110 thus requires negative gate bias relative to source, typical for P-channel high-side switching.

Is the IRFD9110 compatible with automated through-hole assembly processes?

Yes, the IRFD9110 is designed for automatic insertion: it uses the HVMDIP package with 0.1" pin pitch, end-stackable mechanical profile, and lead finish compliant with Pb-free reflow and wave soldering per J-STD-020. Its dual-drain configuration and standardized footprint enable high-yield placement and soldering in volume manufacturing. The IRFD9110PbF variant specifically meets RoHS and JEDEC MSL-1 requirements, confirming suitability for modern automated assembly lines.