My Inquiry
My Account
Vishay Siliconix IRFD9110PBF
- Part No.:
- IRFD9110PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-DIP (0.300", 7.62mm)
- Datasheet:
-
IRFD9110PBF.pdf
- Description:
- MOSFET P-CH 100V 700MA 4DIP
- Quantity:
- Payment:
- Shipping:
Inventory:9,064
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFD9110PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in HVMDIP (4-pin DIP) package, rated for -100 V VDS, 1.2 Ω RDS(on) at VGS = -10 V, and 1.3 W power dissipation at 25 °C ambient. It features repetitive avalanche rating, fast switching (10 ns turn-on delay, 17 ns fall time), and 175 °C maximum junction temperature - used in DC-DC converter high-side switches and relay drivers.
For engineers reviewing the IRFD9110PBF datasheet, IRFD9110PBF pinout, IRFD9110PBF application, or IRFD9110PBF equivalent, key selection criteria include its -100 V blocking capability, low gate charge (8.7 nC), thermal robustness up to 175 °C, and machine-insertable HVMDIP packaging with dual-drain thermal path for 1 W dissipation.
Technical Context
This P-channel MOSFET operates as a high-side switch in low-frequency power control circuits, leveraging its negative threshold voltage (-2.0 to -4.0 V) and ruggedized avalanche capability (140 mJ single-pulse EAS). Its internal body diode supports freewheeling in inductive loads, with verified reverse recovery time (82–160 ns) and Qrr (0.15–0.30 μC).
The HVMDIP package integrates dual drain terminals for enhanced thermal conduction to PCB copper, enabling 1 W continuous operation without heatsink. Dynamic dV/dt rating (-5.5 V/ns) and linear derating factor (0.0083 W/°C) support reliable operation under transient stress and elevated ambient temperatures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Supports high-side switching in 48 V and 60 V industrial bus systems |
| RDS(on) | 1.2 Ω max at VGS = -10 V - Limits conduction loss to ≤0.5 W at 0.7 A continuous current |
| Qg | 8.7 nC - Enables efficient gate drive with standard logic-level or microcontroller outputs |
| TJ max | +175 °C - Allows operation in sealed enclosures or high-ambient environments without derating |
| EAS | 140 mJ - Withstands unclamped inductive energy spikes in relay and solenoid drive applications |
| RthJA | 120 °C/W - Defines thermal rise of 120 °C per watt in still air; dual-drain layout improves PCB heat spreading |
| ID (TA = 25 °C) | -0.70 A - Continuous current rating suitable for low-power load switching and signal-level power control |
Pinout & Package
HVMDIP (High Voltage Mini-DIP) package: 4-pin through-hole, 0.1" pin pitch, dual drain leads (D1/D2) for thermal and current sharing, molded plastic body with exposed metal drain tabs. Dimensions: 8.38 mm × 10.79 mm × 7.36 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Pin 1 & Pin 4) | Drain | Dual-terminal configuration provides parallel current path and direct thermal path to PCB copper pour |
| G (Pin 2) | Gate | Control input requiring -10 V for full enhancement; ±20 V absolute max gate-source voltage |
| S (Pin 3) | Source | Reference node for gate drive; connects to positive rail in high-side switch topology |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under inductive turn-off stress without external snubbers (IAR = -0.7 A, EAR = 0.13 mJ) |
| Dynamic dV/dt rating | -5.5 V/ns - Suppresses false turn-on during high-slew-rate transients in noisy industrial environments |
| 175 °C operating temperature | Eliminates need for thermal derating in sealed or high-ambient designs (e.g., automotive engine compartments) |
| End stackable DIP format | Allows vertical stacking of multiple IRFD9110PBF units on 0.1" grid for compact multi-channel power modules |
| Fast switching performance | 27 ns rise time and 17 ns fall time reduce switching losses in <100 kHz PWM applications |
Applications
| Industrial Relay Driver | Low-Frequency DC-DC High-Side Switch |
|---|---|
Use Scenario: Driving 24 V/48 V electromagnetic relays in PLC I/O modules where space and thermal management are constrained. IC Role / Device Role / Timing Role: High-side P-channel switch controlling relay coil current; operates in on/off mode with <10 ms switching cycles. Use Value: Avalanche rating absorbs coil flyback energy; dual drain reduces thermal resistance to enable 1 W dissipation without heatsink. |
Use Scenario: High-side switch in non-synchronous buck or SEPIC converters for 12–48 V input, outputting 3.3–12 V at ≤500 mA. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in low-frequency (<50 kHz) topologies where gate drive simplicity is prioritized over efficiency. Use Value: Low Qg (8.7 nC) enables direct microcontroller drive; -100 V rating supports wide input range without derating. |
| Overvoltage Protection Circuit | Motor Brake Control |
Use Scenario: Reverse-polarity and overvoltage protection in battery-powered instrumentation with 36 V nominal supply. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode or crowbar element, activated by external comparator. Use Value: -100 V VDS withstands load dump transients; low IDSS (<100 μA) minimizes standby leakage. |
Use Scenario: Dynamic braking of small DC motors (e.g., 24 V, 100 W) in factory automation actuators. IC Role / Device Role / Timing Role: High-side switch shorting motor terminals to dissipate kinetic energy via internal body diode and RDS(on). Use Value: Body diode VSD = -5.5 V ensures low forward drop during braking; 175 °C TJ rating sustains repeated pulse braking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFD9120PBF | VDS = -200 V, RDS(on) = 2.4 Ω (at VGS = -10 V), same HVMDIP package and pinout | Higher voltage rating suits 100–150 V bus systems but higher on-resistance increases conduction loss | Select when system requires >100 V blocking; not drop-in due to higher RDS(on) and reduced current capability |
| STP12PF06 | TO-220 package, VDS = -60 V, RDS(on) = 0.35 Ω, higher current (12 A), no avalanche rating | Requires heatsink and PCB cutout; suited for higher-power, lower-voltage applications with forced-air cooling | Choose for higher current density where board space allows TO-220 mounting and thermal design supports it |
Compared with IRFD9110PBF, IRFD9120PBF trades lower on-resistance for higher voltage headroom in the same footprint, while STP12PF06 offers superior current handling in a thermally superior but bulkier package - neither is pin-compatible, and both require layout revision.
Availability
IRFD9110PBF is available at Aetrix Electronics and suitable for industrial relay drivers, low-frequency DC-DC high-side switches, and overvoltage protection circuits requiring stable component supply, long-term lifecycle assurance, and lead-free compliance.
Supply support for IRFD9110PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.
The IRFD9110PBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for cost-effective, machine-insertable solutions in industrial controls and power management where thermal resilience and transient robustness are critical.
FAQ
What is the maximum continuous drain current for IRFD9110PBF at 100 °C ambient temperature?
The IRFD9110PBF supports -0.49 A continuous drain current at TA = 100 °C, derived from its 1.3 W maximum power dissipation and 120 °C/W junction-to-ambient thermal resistance. This rating assumes adequate PCB copper area for heat spreading and accounts for linear derating (0.0083 W/°C) above 25 °C ambient. At higher temperatures, current must be further reduced to maintain TJ ≤ 175 °C.
Does IRFD9110PBF have a specified avalanche energy rating?
Yes, the IRFD9110PBF is repetitively avalanche rated with a single-pulse avalanche energy (EAS) of 140 mJ under test conditions of VDD = -25 V, L = 52 mH, Rg = 25 Ω, and IAS = -2.0 A. Its repetitive avalanche energy (EAR) is 0.13 mJ, and repetitive avalanche current (IAR) is -0.7 A - confirming suitability for inductive load switching without external clamping.
Can IRFD9110PBF be driven directly by a 3.3 V microcontroller GPIO?
No - the IRFD9110PBF has a gate threshold voltage range of -2.0 V to -4.0 V and requires -10 V for guaranteed RDS(on) ≤ 1.2 Ω. A 3.3 V GPIO cannot provide sufficient negative gate drive; a level-shifting circuit or dedicated gate driver (e.g., TC4427-based inverting stage) is required to achieve full enhancement and minimize conduction loss.
What is the purpose of the dual drain terminals in the IRFD9110PBF HVMDIP package?
The dual drain terminals (Pin 1 and Pin 4) in the IRFD9110PBF serve two functions: (1) parallel current conduction to reduce effective resistance and localized heating, and (2) dual thermal paths to PCB copper, improving heat transfer efficiency. This design enables the device to dissipate up to 1 W in still air - significantly higher than typical single-drain DIP MOSFETs - without requiring a heatsink.
Is IRFD9110PBF RoHS-compliant and lead-free?
Yes, the "PbF" suffix in IRFD9110PBF explicitly denotes lead-free (RoHS-compliant) construction per Vishay's material categorization standard. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements and is qualified for reflow soldering with peak temperature up to 260 °C for 10 seconds, as specified in the official package documentation.
IRFD9110PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 4-DIP (0.300", 7.62mm)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 420mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 4-HVMDIP
IRFD9110PBF FAQ
1.How can I place an order for IRFD9110PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFD9110PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFD9110PBF reliable?
The price and inventory of IRFD9110PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD9110PBF is usually 5 days.
3.What payment methods are accepted for IRFD9110PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD9110PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFD9110PBF?
IRFD9110PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFD9110PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFD9110PBF?
For technical support, including IRFD9110PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD9110PBF requirements.
6.How does Aetrix verify that IRFD9110PBF is sourced from the original manufacturer or authorized distributors?
All IRFD9110PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD9110PBF meets industry standards.
7.What is the process for return or replacement of IRFD9110PBF?
All IRFD9110PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD9110PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFD9110PBF part is unused and in its original packaging.
Return procedure for IRFD9110PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFD9110PBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
