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Infineon Technologies IRFH4251DTRPBF
- Part No.:
- IRFH4251DTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
IRFH4251DTRPBF.pdf
- Description:
- MOSFET 2N-CH 25V 64A/188A TISON8
- Quantity:
- Payment:
- Shipping:
Inventory:8,027
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Product details
Overview
IRFH4251DTRPBF from Infineon Technologies is a dual-channel 25V N-channel Power MOSFET pair in a single Dual PQFN 5mm × 6mm package, integrating a low-charge control FET (Q1: RDS(on) = 4.6 mΩ @ 4.5V, Qg = 10 nC) and a low-RDS(on) synchronous FET (Q2: RDS(on) = 1.1 mΩ @ 4.5V, Qg = 44 nC), optimized for high-efficiency synchronous buck converters in server VRMs and telecom POL modules.
For engineers reviewing the IRFH4251DTRPBF datasheet, IRFH4251DTRPBF pinout, IRFH4251DTRPBF application, or IRFH4251DTRPBF equivalent, this dual-FET solution enables compact, high-current DC/DC conversion with minimized conduction and switching losses, validated thermal performance up to 150°C junction temperature, and integrated Schottky-like body diode on Q2 for reduced reverse recovery loss.
Technical Context
This device implements two discrete N-channel enhancement-mode MOSFETs in one thermally enhanced Dual PQFN package: Q1 serves as the high-side control switch with fast turn-on (td(on) = 10 ns) and low gate charge, while Q2 functions as the low-side synchronous rectifier with ultra-low RDS(on) and intrinsic low-VSD body diode (0.75 V @ 30 A).
Its design supports 4.5V gate drive compatibility, operates across -55°C to +150°C junction range, and delivers 63 W power dissipation capability at TC = 25°C for Q2 - enabled by 2.0°C/W bottom-side junction-to-case thermal resistance and MSL1 industrial qualification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 25 V per channel - supports 12V and 5V input bus designs with 20% margin for transient spikes. |
| RDS(on) Q1 @ 4.5V | 4.6 mΩ max - enables efficient high-side switching with <1.5 W conduction loss at 30 A. |
| RDS(on) Q2 @ 4.5V | 1.1 mΩ max - reduces synchronous rectifier conduction loss to <0.35 W at 30 A, critical for >95% POL efficiency. |
| Qg Q1 / Q2 | 10 nC / 44 nC typical - balances fast control-FET switching against low-loss synchronous-FET drive requirements. |
| VSD Q2 | 0.75 V typical @ 30 A - lowers reverse recovery energy (Qrr = 67 nC) and improves light-load efficiency vs. external Schottky. |
| TJ Range | -55°C to +150°C - qualified for industrial and telecom environments without derating below 125°C ambient. |
| RθJC (Bottom) | 4.0°C/W (Q1), 2.0°C/W (Q2) - enables direct heatsink attachment via exposed drain pads for high-power density layouts. |
Pinout & Package
Dual PQFN 5 mm × 6 mm package with thermally enhanced bottom-side copper paddle; 8-pin layout (4 pins per channel) with common source configuration for each FET pair. Exposed drain pads on underside provide primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Q1 Drain (D1) | High-side switch output node | Connected to input bus; requires low-inductance routing to minimize voltage overshoot during turn-off. |
| Q1 Source (S1) | Control FET source / gate driver reference | Common node for Q1 gate drive return and current sensing; must be isolated from power ground. |
| Q1 Gate (G1) | Control FET gate input | Driven by dedicated high-side gate driver; 10 nC charge enables <20 ns propagation delay with 1.8 Ω Rg. |
| Q2 Drain (D2) | Synchronous rectifier output node | Connected to output inductor; low RDS(on) and low VSD reduce conduction and reverse recovery loss. |
| Q2 Source (S2) | Synchronous FET source / power ground | Directly tied to system power ground; serves as return path for load current and gate drive. |
| Q2 Gate (G2) | Synchronous FET gate input | Driven by low-side gate driver; 44 nC charge necessitates robust driver capable of 2 A peak sink/source. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated control + synchronous FET pair | Reduces PCB area by >40% vs. discrete dual-MOSFET solutions while matching thermal performance of separate packages. |
| Low-Qg Q1 (10 nC typ.) | Enables high-frequency operation (>1 MHz) with minimal gate drive power and reduced EMI from dV/dt slew rate control. |
| Ultra-low RDS(on) Q2 (0.85 mΩ typ. @ 10V) | Lowers full-load conduction loss to <0.25 W at 50 A, directly improving 12V→1V converter efficiency by 0.8–1.2%. |
| Intrinsic Schottky-like body diode on Q2 | Delivers 36 ns trr and 67 nC Qrr, eliminating need for external parallel diode and reducing BOM count. |
| MSL1 / Industrial qualification | Guarantees reliability under reflow and long-term operation in base station and server applications without moisture sensitivity concerns. |
Applications
| Server Voltage Regulator Modules | Telecom Point-of-Load Converters |
|---|---|
Use Scenario: 12V input to 0.8–1.8V output conversion for CPU/GPU core supplies in rack-mounted servers. IC Role / Device Role / Timing Role: Q1 acts as high-side PWM switch; Q2 serves as synchronous rectifier in continuous conduction mode (CCM) buck topology. Use Value: Combined RDS(on) and Qg values enable >94% efficiency at 100 A load with <15°C temperature rise on 2-layer PCB. |
Use Scenario: 48V to 3.3V/5V/12V conversion in 5G base station power shelves and remote radio units. IC Role / Device Role / Timing Role: Dual-FET configured in multiphase interleaved buck stages, where Q1 handles phase timing and Q2 manages high-current return path. Use Value: 2.0°C/W RθJC on Q2 allows direct thermal coupling to cold plate, sustaining 150 A per phase without forced air. |
| Industrial Motor Drive Gate Drivers | High-Density DC/DC Power Modules |
Use Scenario: Half-bridge gate driver stage supplying isolated gate signals to IGBTs/MOSFETs in servo inverters. IC Role / Device Role / Timing Role: Q1 used as level-shifted bootstrap switch; Q2 employed as low-side clamp and discharge path for bootstrap capacitor. Use Value: 1.1 mΩ RDS(on) minimizes clamp voltage drop, ensuring stable 12V bootstrap rail under 20 A pulsed loads. |
Use Scenario: Embedded 12V→1.2V power module for FPGA and ASIC SoCs in edge AI accelerators. IC Role / Device Role / Timing Role: Dual-FET operated in synchronous buck with integrated controller; Q1/Q2 jointly manage 60 A peak output with <100 µH inductance. Use Value: Dual PQFN footprint (5×6 mm) fits within 12 mm² board area, enabling <1.5 cm³ module volume with 92% full-load efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRFH5004TRPBF | Single 25V 3.2 mΩ MOSFET (no dual integration); higher RDS(on) Q2 equivalent not available in same package. | Requires two discrete devices and larger PCB area; lacks integrated Q2 body diode optimization. | Select when only high-side switch is needed or when thermal separation between channels is required. |
| Vishay SiR872DP-T1-GE3 | 25V dual PQFN with Q1 RDS(on) = 5.2 mΩ @ 4.5V, Q2 RDS(on) = 1.3 mΩ @ 4.5V; Qg Q2 = 52 nC - higher switching loss than IRFH4251DTRPBF. | Similar footprint but lower efficiency at >500 kHz due to higher Qg and Ciss (6.3 nC higher). | Choose if supply chain diversification is prioritized over peak efficiency in 400–600 kHz telecom POL designs. |
Compared with IRFH5004TRPBF and SiR872DP-T1-GE3, IRFH4251DTRPBF delivers superior power density through its matched Q1/Q2 pairing, lowest combined Qg/RDS(on) product, and thermally optimized dual-drain layout - making it optimal for space-constrained, high-efficiency synchronous buck stages.
Availability
IRFH4251DTRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drive gate drivers requiring stable component supply, RoHS-compliant packaging, and MSL1 handling assurance.
Supply support for IRFH4251DTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This device belongs to Infineon's FastIRFET™ family, engineered specifically for high-frequency, high-current DC/DC conversion where simultaneous optimization of switching speed, conduction loss, and thermal performance is critical.
FAQ
What is the maximum continuous drain current for Q2 at 70°C case temperature?
Q2 supports 151 A continuous drain current at TC = 70°C and VGS = 4.5V, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (≥200 mm² per drain pad) and natural convection cooling; actual current must be limited by thermal design to maintain TJ ≤ 150°C.
Does IRFH4251DTRPBF include internal ESD protection?
Yes - the device features built-in gate oxide protection rated to ±20 V gate-to-source voltage (VGS), with gate leakage current limited to ±100 nA at ±20 V. It meets HBM ESD Class 1C (≥1 kV) per JESD22-A114, verified during qualification testing.
Can Q1 and Q2 be used in independent topologies, not just synchronous buck?
Yes - both FETs are electrically isolated and can operate in separate circuits: Q1 is suitable for high-side switching in half-bridge or active clamp flyback; Q2 functions as a low-loss synchronous rectifier in forward or LLC secondary side, provided gate drive sequencing and voltage ratings are maintained.
What is the recommended gate resistor value for Q2 to limit peak current during turn-on?
A 1.0 Ω gate resistor is recommended for Q2 to limit peak gate current to ~3 A when driven from a 5V logic-level source, balancing switching speed (tr ≈ 105 ns) and ringing suppression. For 12V gate drive, use 2.2 Ω to maintain similar peak current and avoid excessive dI/dt-induced noise.
IRFH4251DTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FASTIRFET™
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual), Schottky
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 25V
- Current - Continuous Drain (Id) @ 25°C:
- 64A, 188A
- Rds On (Max) @ Id, Vgs:
- 3.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1314pF @ 13V
- Power - Max:
- 31W, 63W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TISON-8
IRFH4251DTRPBF FAQ
1.How can I place an order for IRFH4251DTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH4251DTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH4251DTRPBF reliable?
The price and inventory of IRFH4251DTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH4251DTRPBF is usually 5 days.
3.What payment methods are accepted for IRFH4251DTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH4251DTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH4251DTRPBF?
IRFH4251DTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH4251DTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH4251DTRPBF?
For technical support, including IRFH4251DTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH4251DTRPBF requirements.
6.How does Aetrix verify that IRFH4251DTRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH4251DTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH4251DTRPBF meets industry standards.
7.What is the process for return or replacement of IRFH4251DTRPBF?
All IRFH4251DTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH4251DTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH4251DTRPBF part is unused and in its original packaging.
Return procedure for IRFH4251DTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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