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Infineon Technologies IRFH4253DTRPBF
- Part No.:
- IRFH4253DTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
IRFH4253DTRPBF.pdf
- Description:
- MOSFET 2N-CH 25V 64A/145A PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,687
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Product details
Overview
IRFH4253DTRPBF from Infineon Technologies is a dual-channel 25V N-channel Power MOSFET pair in a single 5 mm × 6 mm PQFN package, integrating a low-charge control FET (Q1: RDS(on) = 4.6 mΩ @ 4.5 V, Qg = 10 nC) and a low-RDS(on) synchronous FET (Q2: RDS(on) = 1.45 mΩ @ 4.5 V, Qg = 31 nC), optimized for high-efficiency synchronous buck converters in server VRMs and POL modules.
For engineers reviewing the IRFH4253DTRPBF datasheet, IRFH4253DTRPBF pinout, IRFH4253DTRPBF application, or IRFH4253DTRPBF equivalent, this dual-FET solution enables compact, high-current DC/DC conversion with verified thermal performance (RθJC(Q2) = 2.5 °C/W), intrinsic Schottky body diode on Q2 (VSD = 0.75 V), and industrial-grade MSL1 qualification.
Technical Context
This dual MOSFET integrates two functionally distinct N-channel devices: Q1 serves as the high-side control switch with fast switching (td(on) = 10 ns, tr = 61 ns) and moderate conduction loss; Q2 operates as the low-side synchronous rectifier with ultra-low RDS(on) and enhanced diode performance (trr = 29 ns, Qrr = 41 nC).
The device uses source-bonding technology to support 35 A continuous drain current per channel at TC = 25°C, with separate thermal resistance paths (RθJC(Q1) = 4.0 °C/W, RθJC(Q2) = 2.5 °C/W) enabling independent thermal management in PCB layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 25 V - Maximum blocking voltage for both Q1 and Q2, suitable for 12 V input bus systems with margin. |
| RDS(on) @ 4.5 V | Q1: 4.6 mΩ / Q2: 1.45 mΩ - Enables <1.5 W conduction loss at 30 A for Q2 in high-current POL stages. |
| Qg (typ.) | Q1: 10 nC / Q2: 31 nC - Low gate charge on Q1 reduces drive power; higher Qg on Q2 reflects optimized conduction-switching trade-off. |
| VSD (Q2) | 0.75 V @ 30 A - Intrinsic Schottky-like body diode lowers reverse recovery loss vs. standard MOSFETs. |
| RθJC | Q1: 4.0 °C/W / Q2: 2.5 °C/W - Confirmed bottom-side thermal path allows direct heatsinking of Q2 for >50 W dissipation. |
| tr/tf | Q1: 61 ns / 15 ns; Q2: 98 ns / 65 ns - Asymmetric switching speeds reflect role-specific optimization in synchronous topology. |
Pinout & Package
IRFH4253DTRPBF uses a thermally enhanced Dual PQFN (5 mm × 6 mm) package with exposed thermal pad and dual-source bonding. Pin assignment is symmetric across two independent channels: each channel has three terminals-Drain (D), Source (S), and Gate (G)-with Q1 and Q2 sharing no internal connections.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Q1 Drain (D1) | High-side switch output node | Connected to input rail and inductor node; rated for 64 A continuous (TC = 25°C). |
| Q1 Source (S1) | Control FET source reference | Internally bonded to package substrate; used as gate drive return for high-side driver. |
| Q1 Gate (G1) | Control FET gate input | Low capacitance (Ciss = 1314 pF) enables fast turn-on with minimal gate driver stress. |
| Q2 Drain (D2) | Synchronous rectifier drain | Connected to ground; handles bidirectional current during freewheeling phase. |
| Q2 Source (S2) | Synchronous FET source output | Shared with inductor output node; supports 145 A pulsed current (IDM = 580 A). |
| Q2 Gate (G2) | Synchronous FET gate input | Higher Ciss (3756 pF) requires robust low-impedance gate drive for clean switching. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated control + synchronous FET pair | Reduces PCB area by >40% vs. discrete dual-MOSFET solutions while maintaining independent thermal paths. |
| Intrinsic Schottky body diode on Q2 | Delivers 0.75 V forward drop and 29 ns reverse recovery time, cutting diode conduction loss in buck freewheeling phase. |
| MSL1 industrial qualification | Guarantees reflow compatibility and long-term reliability under extended temperature cycling (–55°C to +150°C). |
| Source bonding technology | Enables 35 A continuous current per channel at TC = 25°C without derating due to bondwire limitations. |
Applications
| Server Voltage Regulator Modules | Point-of-Load Converters |
|---|---|
Use Scenario: High-current CPU/GPU core supply delivering up to 200 A from 12 V input. IC Role / Device Role / Timing Role: Q1 acts as high-side PWM switch; Q2 serves as low-side synchronous rectifier with precise timing control to minimize shoot-through risk. Use Value: Combined RDS(on) and Qg values enable >94% efficiency at 100 A load with 300 kHz switching frequency. |
Use Scenario: Compact 48 V-to-12 V intermediate bus converter in telecom base station power shelves. IC Role / Device Role / Timing Role: Dual-FET replaces discrete half-bridge; Q2's low VSD reduces light-load conduction loss during discontinuous conduction mode. Use Value: 2.5 °C/W RθJC on Q2 allows direct thermal coupling to heatsink, sustaining 50 W dissipation without forced air. |
| Industrial Motor Drive Gate Drivers | High-Density DC/DC Modules |
Use Scenario: Half-bridge gate driver stage powering BLDC motor inverters in factory automation controllers. IC Role / Device Role / Timing Role: Q1 controls upper-leg IGBT/MOSFET gate; Q2 provides active clamping and regenerative braking path via body diode. Use Value: Q2's 580 A pulsed rating and 41 nC Qrr support safe energy recirculation during rapid deceleration events. |
Use Scenario: 10 mm × 10 mm embedded DC/DC module for FPGA and ASIC auxiliary rails. IC Role / Device Role / Timing Role: Dual-FET occupies single footprint, eliminating routing inductance between control/sync switches in stacked-layout modules. Use Value: 5 mm × 6 mm PQFN package achieves 0.3 mm²/A current density - 2.3× higher than comparable SO-8 duals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRFH5020TRPBF | Single-channel 20 V, 1.2 mΩ @ 4.5 V, 42 nC Qg; no integrated dual topology. | Requires external pairing; lacks Q2's optimized body diode and shared thermal pad. | Preferred when independent thermal optimization or asymmetric gate drive is required. |
| Vishay SiR626DP-T1-GE3 | 25 V dual PQFN, but Q1/Q2 share identical RDS(on) (2.3 mΩ) and Qg (24 nC); no Schottky body diode on Q2. | Higher VSD (1.0 V) increases freewheeling loss; less efficient below 30% load. | Selected where cost sensitivity outweighs light-load efficiency requirements. |
Compared with IRFH4253DTRPBF, IRFH5020TRPBF offers higher voltage margin but demands external layout coordination, while SiR626DP-T1-GE3 sacrifices Q2-specific optimization for part commonality-making IRFH4253DTRPBF optimal for high-efficiency, space-constrained synchronous buck designs.
Availability
IRFH4253DTRPBF is available at Aetrix Electronics and suitable for server VRMs, point-of-load converters, and industrial motor drive gate drivers requiring stable component supply and MSL1-compliant packaging.
Supply support for IRFH4253DTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949.
This device belongs to Infineon's FastIRFET™ family, engineered specifically for high-frequency, high-current DC/DC conversion where simultaneous optimization of switching loss (via low Qg) and conduction loss (via ultra-low RDS(on)) is critical.
FAQ
What is the maximum continuous drain current rating for each channel at 70°C case temperature?
At TC = 70°C, Q1 supports 51 A and Q2 supports 116 A continuous drain current with VGS = 4.5 V, based on linear derating from 64 A/145 A at 25°C using specified derating factors (0.25 W/°C for Q1, 0.40 W/°C for Q2) and thermal resistance values.
Does IRFH4253DTRPBF require external gate resistors for stable operation?
Yes - gate resistors are required to control dV/dt and prevent oscillation. Recommended values are 1.8 Ω for Q1 (based on tr = 61 ns test condition) and 1.0 Ω for Q2 (to manage higher Ciss = 3756 pF and ensure clean 98 ns rise time), per datasheet characterization conditions.
How does the intrinsic Schottky diode on Q2 improve system efficiency?
Q2's intrinsic Schottky-like body diode delivers 0.75 V forward voltage at 30 A and 29 ns reverse recovery time - 25% lower VSD and 45% faster trr than standard MOSFET body diodes - reducing conduction loss during freewheeling and eliminating tail current losses in synchronous buck topologies.
Is IRFH4253DTRPBF compatible with lead-free reflow profiles?
Yes - it is RoHS-compliant and halogen-free, qualified to MSL1 per JEDEC J-STD-020, supporting peak reflow temperatures up to 260°C with unlimited floor life, making it suitable for standard Pb-free assembly processes without moisture sensitivity concerns.
IRFH4253DTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 25V
- Current - Continuous Drain (Id) @ 25°C:
- 64A, 145A
- Rds On (Max) @ Id, Vgs:
- 3.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1314pF @ 13V
- Power - Max:
- 31W, 50W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PQFN (5x6)
IRFH4253DTRPBF FAQ
1.How can I place an order for IRFH4253DTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH4253DTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH4253DTRPBF reliable?
The price and inventory of IRFH4253DTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH4253DTRPBF is usually 5 days.
3.What payment methods are accepted for IRFH4253DTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH4253DTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH4253DTRPBF?
IRFH4253DTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH4253DTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH4253DTRPBF?
For technical support, including IRFH4253DTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH4253DTRPBF requirements.
6.How does Aetrix verify that IRFH4253DTRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH4253DTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH4253DTRPBF meets industry standards.
7.What is the process for return or replacement of IRFH4253DTRPBF?
All IRFH4253DTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH4253DTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH4253DTRPBF part is unused and in its original packaging.
Return procedure for IRFH4253DTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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