Infineon Technologies IRFH4255DTRPBF

Overview

IRFH4255DTRPBF from Infineon Technologies (formerly International Rectifier) is a dual-channel 25 V N-channel Power MOSFET in a single Dual PQFN 5 mm × 6 mm package, integrating a low-charge control FET (Q1, R_DS(on) = 4.6 mΩ @ 4.5 V) and a low-R_DS(on) synchronous FET (Q2, R_DS(on) = 2.1 mΩ @ 4.5 V), optimized for high-efficiency synchronous buck converters in server VRMs and POL modules.

For engineers reviewing the IRFH4255DTRPBF datasheet, IRFH4255DTRPBF pinout, IRFH4255DTRPBF application, or IRFH4255DTRPBF equivalent, key selection criteria include gate charge asymmetry (Q_g = 10 nC / 23 nC), thermal resistance (R_θJC = 4.0 °C/W / 3.3 °C/W), intrinsic Schottky body diode on Q2 (V_SD = 0.75 V), and MSL1 industrial qualification.

Technical Context

This dual MOSFET implements a tightly coupled control-synchronous pair with independent gate terminals and shared source bonding. Q1 features higher gate threshold (V_GS(th) = 1.1–2.1 V) and lower total gate charge for fast turn-on in high-side switching, while Q2 uses lower R_DS(on) and optimized reverse recovery (t_rr = 26 ns, Q_rr = 34 nC) to minimize conduction and switching losses in low-side operation.

The device leverages FastIRFET™ technology with trench-gate structure and optimized cell pitch to achieve simultaneous low Q_g/R_DS(on) trade-off. Its dual-die layout enables direct integration into compact 2-phase or interleaved buck stages without external layout parasitics between control and sync FETs.

Key Specifications

Pinout & Package

Dual PQFN 5 mm × 6 mm package with exposed thermal pad (bottom-side cooling), RoHS-compliant and halogen-free, MSL1 rated for industrial reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel 25 V power MOSFET applications.

Compared with IRFH5020TRPBF and SiR872DP-T1-GE3, IRFH4255DTRPBF uniquely delivers matched dual-channel optimization-enabling tighter timing control, lower layout parasitics, and 15% higher power density in space-constrained VRM layouts-without sacrificing thermal robustness or industrial reflow compliance.

Availability

IRFH4255DTRPBF is available at Aetrix Electronics and suitable for server VRMs, point-of-load converters, and industrial motor drive gate drivers requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for IRFH4255DTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon-based power MOSFETs and GaN/SiC solutions.

This part belongs to the FastIRFET™ family, engineered specifically for high-frequency, high-current DC/DC conversion in data center and industrial computing infrastructure where thermal density and switching efficiency are critical.

FAQ

What is the maximum continuous drain current rating for each channel at T_C = 70°C?

At case temperature 70°C, Q1 supports 51 A and Q2 supports 84 A continuous drain current with V_GS = 4.5 V. These values derive from derating curves in the datasheet and assume adequate PCB copper area (≥200 mm² per channel) and thermal via density (≥12 vias) to maintain junction temperature ≤150°C.

Does IRFH4255DTRPBF require negative gate drive for reliable turn-off?

No. The device specifies V_GS(th) = 1.1–2.1 V for both channels and exhibits stable turn-off behavior with 0 V gate drive. Negative gate bias is not required, though it may be used to improve noise immunity in high-dV/dt environments such as motor drives.

Can the intrinsic body diode of Q2 replace an external Schottky diode in synchronous rectification?

Yes. Q2's intrinsic diode has V_SD = 0.75 V at 30 A and t_rr = 26 ns, meeting or exceeding performance of discrete 25 V Schottky diodes in most synchronous buck applications. No external diode is needed unless ultra-low forward drop (<0.5 V) or sub-10 ns recovery is mandated.

How does the thermal pad connection affect R_θJC performance?

Full solder coverage of the thermal pad reduces R_θJC by up to 25% versus partial coverage. With ≥80% solder fill and ≥6 thermal vias to a solid ground plane, measured R_θJC reaches 3.3 °C/W for Q2-matching the datasheet's bottom-side thermal specification and enabling 38 W dissipation at ΔT = 125°C.