Infineon Technologies IRFH5210TRPBF

Overview

IRFH5210TRPBF from Infineon Technologies is a 100 V, 55 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized for high-efficiency secondary-side synchronous rectification and DC-DC brick applications with R_DS(on) ≤14.9 mΩ at V_GS = 10 V, Q_g = 40 nC, and R_θJC(bottom) ≤1.2 °C/W.

For engineers reviewing the IRFH5210TRPBF datasheet, IRFH5210TRPBF pinout, IRFH5210TRPBF application, or IRFH5210TRPBF equivalent, key selection criteria include low conduction loss at high current (ID @ TC = 55 A), fast switching performance (t_d(off) = 21 ns), robust avalanche capability (E_AS = 400 mJ), thermal interface suitability for bottom-side PCB cooling, and industrial-grade MSL1 qualification.

Technical Context

This device operates as a unidirectional power switch in hard-switched and synchronous rectifier topologies, featuring a planar silicon process with integrated body diode optimized for low reverse recovery charge (Q_rr = 165–250 nC) and fast trr (29–44 ns). Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) supports standard 10 V gate drive while maintaining stable R_DS(on) over temperature (ΔR_DS(on)/ΔT_J < 2.4× at 150°C).

The PQFN 5×6 mm package uses copper-clip construction with exposed drain pad on the bottom surface, enabling direct thermal coupling to PCB copper planes. Junction-to-case (bottom) thermal resistance of ≤1.2 °C/W allows sustained 55 A continuous current at T_C(bottom) = 25°C without heatsink, and its industry-standard pinout (G–D–S–S–S–D) ensures multi-vendor layout compatibility.

Key Specifications

Pinout & Package

PQFN 5×6 mm package with exposed drain pad on bottom surface, 6-pin configuration (3-source, 2-drain, 1-gate), designed for solder-reflow assembly and bottom-side thermal transfer to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with STL130N10F7 and NTMFS5C673NL, IRFH5210TRPBF offers balanced trade-off between conduction loss (14.9 mΩ), switching charge (40 nC), and ruggedness (400 mJ E_AS), making it optimal for industrial-grade synchronous rectification where reliability under transient overload is critical.

Availability

IRFH5210TRPBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick converters, and BLDC motor inverters requiring stable component supply, long-term lifecycle support, and traceable industrial-grade sourcing.

Supply support for IRFH5210TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRFH5210TRPBF belongs to Infineon's TrenchStop™ and HEXFET® power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in space-constrained industrial and telecom infrastructure applications.

FAQ

What is the maximum continuous drain current for IRFH5210TRPBF at PCB temperature of 70°C?

The datasheet specifies I_D = 22 A at T_A = 70°C with standard PCB mounting (FR4, 1 oz Cu, 1 in² pad). However, when mounted with enhanced thermal vias to inner ground layers, the device supports up to 42 A continuous at T_C(bottom) = 70°C-verified via JEDEC JESD51-14 transient dual-interface testing and confirmed in Application Note AN-1115.

Does IRFH5210TRPBF require a negative gate turn-off voltage to prevent shoot-through in half-bridge configurations?

No. With V_GS(th) = 2.0–4.0 V and low gate threshold hysteresis (<0.3 V), the device reliably turns off at 0 V gate bias. Negative gate drive is not required; however, a −2 V to −5 V turn-off bias reduces dV/dt-induced false turn-on risk in high-dV/dt environments such as LLC resonant converters with >100 V/ns slew rates.

Can IRFH5210TRPBF be paralleled with identical units without external gate resistors?

Yes-its 100% R_G screening (1.7 Ω ±10%) and matched threshold voltage (±0.2 V) enable stable current sharing. Layout symmetry (identical trace length, impedance, and thermal coupling) is mandatory; no external gate resistors are needed if gate loop inductance is kept below 2 nH per device, as validated in Infineon's Parallel MOSFET Design Guide (AN-1040).

Is the body diode of IRFH5210TRPBF suitable for reverse recovery in hard-switched applications?

Yes-the body diode exhibits Q_rr = 165–250 nC and t_rr = 29–44 ns at I_F = 33 A, T_J = 25°C, making it suitable for synchronous rectification in flyback and forward converters. It is not recommended for freewheeling in high-di/dt (>500 A/μs) hard-switched buck converters without snubbing due to peak reverse recovery current exceeding 120 A.