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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5250TRPBF

Name: IRFH5250TRPBF
Brand: Infineon Technologies
SKU: IRFH5250TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5250TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH5250TRPBF.pdf

Description:: MOSFET N-CH 25V 45A/100A 8PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:9,000

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Product details

Overview

IRFH5250TRPBF from Infineon Technologies is a 25 V, 300 A (T_C = 25°C) N-channel Trench MOSFET in PQFN 5 mm × 6 mm package, featuring 1.15 mΩ R_DS(on) at V_GS = 10 V, 52 nC typical Q_g, and 0.8 °C/W max R_θJC(bottom), optimized for high-current OR-ing and battery-powered DC motor inverters.

For engineers reviewing the IRFH5250TRPBF datasheet, IRFH5250TRPBF pinout, IRFH5250TRPBF application, or IRFH5250TRPBF equivalent, key selection criteria include low-conduction-loss switching at 12 V bus, thermal performance under PCB-limited cooling, avalanche ruggedness (468 mJ E_AS), and compatibility with standard SMT reflow profiles per MSL1 rating.

Technical Context

This device employs Infineon's HEXFET® Trench technology to achieve ultra-low R_DS(on) and fast switching with 17 nC Q_gd and 25 nC Q_sw, enabling high-efficiency synchronous rectification and bidirectional current control in compact power stages. Its 0.9 mm profile and bottom-thermal-pad design prioritize PCB heat extraction over case-to-ambient conduction.

The MOSFET supports gate drive at 4.5 V (R_DS(on) = 1.75 mΩ max) and exhibits stable threshold voltage (1.35–2.35 V) with negative temperature coefficient (−6.3 mV/°C), ensuring predictable turn-on behavior across −55°C to +150°C junction range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 12 V bus OR-ing and motor H-bridge applications
R_DS(on) @ 10 V	1.15 mΩ max - Enables ≤0.28 W conduction loss at 300 A continuous drain current
Q_g	52 nC typical - Reduces gate driver power demand and enables <30 ns turn-on delay with 1.8 Ω source resistance
R_θJC(bottom)	0.8 °C/W max - Allows direct thermal coupling to PCB copper, supporting >150 W steady-state dissipation with 200 cm² 2-oz copper
E_AS	468 mJ - Withstands unclamped inductive switching events up to 50 A avalanche current without failure
I_D @ T_C = 25°C	300 A - Rated for continuous operation when case (bottom) temperature is maintained at 25°C via heatsink or PCB thermal plane
V_GS(th)	1.35–2.35 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

PQFN 5 mm × 6 mm package with exposed thermal pad on bottom surface; 8-pin layout (3×2+2) optimized for low-inductance high-current routing and automated optical inspection. Pin 1 marked by corner chamfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6	Drain (internally paralleled)	Primary current path for high-side or low-side switching; connected to internal die backside metallization and thermal pad
7	Gate	Control terminal requiring ≤20 V absolute max; 1.3 Ω typical gate resistance limits ringing during fast edge transitions
8	Source	Reference node for gate drive; tied to PCB ground plane to minimize common-source inductance in high-dI/dt operation

Key Features

Feature	Design Value
Low R_DS(on)	1.15 mΩ max at 10 V enables <0.3 W conduction loss at 300 A, reducing thermal stress in space-constrained inverters
Bottom-side thermal pad	0.8 °C/W R_θJC(bottom) allows >90% of junction heat to transfer directly to PCB, eliminating need for external heatsinks
100% R_g tested	Guarantees gate resistance ≤1.3 Ω, ensuring consistent switching timing and minimizing risk of oscillation in parallel configurations
MSL1 rating	Permits unlimited floor life and single-reflow processing without baking, simplifying manufacturing for high-volume automotive and industrial assemblies
Industry-standard pinout	Matches footprint and layout conventions of competing 5×6 mm PQFN MOSFETs, enabling drop-in replacement without PCB redesign

Applications

OR-ing Power Path

Battery-Powered Motor Inverter

Use Scenario: Dual 12 V supply redundancy in telecom shelf systems where hot-swap capability and reverse-current blocking are required.

IC Role / Device Role / Timing Role: N-channel OR-ing switch operating in linear mode during startup and saturated mode during steady-state conduction.

Use Value: 1.15 mΩ R_DS(on) limits voltage drop to <360 mV at 300 A, preserving system efficiency while enabling fast fault isolation via gate control.

Use Scenario: Half-bridge leg in cordless power tool battery packs driving brushed or BLDC motors at up to 300 A peak.

IC Role / Device Role / Timing Role: Low-side switching element handling high pulsed currents with minimal switching loss due to 52 nC Q_g and 17 nC Q_gd.

Use Value: 468 mJ E_AS withstands motor commutation spikes; 0.9 mm profile fits within tight mechanical envelopes of handheld tools.

High-Density DC-DC Converter

Automotive Body Control Module

Use Scenario: Synchronous rectifier in 48 V–12 V buck converter for ADAS domain controllers requiring >95% efficiency at 100 A output.

IC Role / Device Role / Timing Role: Secondary-side power switch synchronized to primary FET, conducting during freewheeling phase with minimal V_SD forward drop.

Use Value: 1.0 V V_SD at 50 A ensures low body-diode conduction loss during dead-time; 36 nC Q_oss minimizes capacitive switching loss at 500 kHz.

Use Scenario: Load switch for high-current actuators (e.g., power windows, seat motors) in 12 V vehicle architectures with strict EMC and thermal constraints.

IC Role / Device Role / Timing Role: Protected high-side or low-side driver controlled by microcontroller GPIO with integrated overtemperature shutdown.

Use Value: −55°C to +150°C operating range meets AEC-Q101 requirements; RoHS-compliant, halogen-free construction satisfies automotive material compliance mandates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTN300N25T2	TO-268 package, higher R_DS(on) (1.4 mΩ), no bottom thermal pad, 200 A rated	Requires external heatsink; less suitable for PCB-limited thermal designs	Prefer when discrete heatsinking is available and lead time favors IXYS
SUD50N03-15P	SO-8 package, 1.5 mΩ R_DS(on), 50 A rating, no avalanche rating published	Limited to ≤50 A continuous; unsuitable for OR-ing or motor inverter primary switching	Select only for low-current auxiliary loads where footprint and cost outweigh performance needs

Compared with IXTN300N25T2 and SUD50N03-15P, IRFH5250TRPBF delivers 3× higher current density in half the footprint, superior thermal coupling to PCB, and verified avalanche ruggedness-making it uniquely suited for high-reliability, high-power-density 12 V system designs.

Availability

IRFH5250TRPBF is available at Aetrix Electronics and suitable for OR-ing power paths, battery-powered motor inverters, high-density DC-DC converters, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for IRFH5250TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to Infineon's HEXFET® Trench MOSFET product line, engineered for ultra-low R_DS(on) and high-current switching in space-constrained, thermally demanding applications such as server VRMs and electric vehicle subsystems.

FAQ

What is the maximum continuous drain current for IRFH5250TRPBF at 100°C case temperature?

At T_C(bottom) = 100°C, the maximum continuous drain current is 190 A, derated from 300 A at 25°C using the linear derating factor of 0.029 W/°C and thermal resistance of 0.8 °C/W. This reflects real-world thermal limits when PCB copper area is constrained.

Does IRFH5250TRPBF require a gate resistor for stable switching?

Yes-a series gate resistor of ≥1.8 Ω is recommended to dampen ringing caused by gate loop inductance and the device's 1.3 Ω intrinsic R_g. The datasheet specifies t_d(off) and t_f test conditions with R_G = 1.8 Ω, confirming this value as optimal for EMI control and safe SOA operation.

Can IRFH5250TRPBF be used in synchronous rectification at 500 kHz?

Yes-its 52 nC Q_g, 17 nC Q_gd, and 36 nC Q_oss support efficient 500 kHz operation when paired with a capable gate driver. Measured C_iss = 7174 pF and C_rss = 828 pF indicate low Miller feedback, enabling clean turn-off even under high dV/dt conditions.

Is the PQFN 5×6 mm package compatible with standard stencil thicknesses for reflow soldering?

Yes-the package is qualified for MSL1 and designed for standard 0.12 mm (4.7 mil) stencil thickness with 1:1 aperture ratio. Application note AN-1136 confirms optimized footprint geometry and solder paste volume for void-free thermal pad attachment using Type 4 solder paste.

IRFH5250TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.15mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7174 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 160W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH5250TRPBF FAQ

1.How can I place an order for IRFH5250TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5250TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5250TRPBF reliable?

The price and inventory of IRFH5250TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5250TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH5250TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5250TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5250TRPBF?

IRFH5250TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5250TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5250TRPBF?

For technical support, including IRFH5250TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5250TRPBF requirements.

6.How does Aetrix verify that IRFH5250TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH5250TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5250TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH5250TRPBF?

All IRFH5250TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5250TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5250TRPBF part is unused and in its original packaging.

Return procedure for IRFH5250TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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