Infineon Technologies IRFH5301TRPBF

Overview

IRFH5301TRPBF from Infineon Technologies is a 30 V, 100 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, featuring 1.55 mΩ typical R_DS(on) at V_GS = 10 V, 37 nC typical total gate charge, and 1.1 °C/W junction-to-case (bottom) thermal resistance. It serves as a high-current synchronous rectifier in 12 V buck converters and OR-ing switch in redundant power systems.

For engineers reviewing the IRFH5301TRPBF datasheet, IRFH5301TRPBF pinout, IRFH5301TRPBF application, or IRFH5301TRPBF equivalent, key selection criteria include low conduction loss at high DC current, fast switching with controlled Q_gd/Q_gs2 ratio, PCB thermal interface capability, and industrial-grade MSL1 qualification for automated assembly.

Technical Context

This MOSFET employs trench-gate silicon process optimized for high-current, low-voltage DC-DC conversion. Its 1.55 mΩ R_DS(on) at 10 V drive enables <1.5 W conduction loss at 50 A, while 12 nC Q_gd and 17 nC Q_sw support efficient hard-switching up to 1 MHz in synchronous buck topologies.

The PQFN 5×6 mm package uses bottom-side thermal pad for direct PCB copper thermal coupling, delivering 1.1 °C/W R_θJC(bottom), and integrates an intrinsic body diode with 24 ns typical reverse recovery time and 53 nC Q_rr at I_F = 50 A - critical for freewheeling performance in motor drives and inverters.

Key Specifications

Pinout & Package

PQFN 5×6 mm package with exposed thermal pad on bottom side; 3-pin configuration (Source, Drain, Gate) arranged in standard industry pinout for multi-vendor compatibility and drop-in replacement in existing layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IRFH5301TRPBF, IRFH5004TRPBF trades 53% higher R_DS(on) for 27% lower Q_g, while SiR626DP offers marginally lower R_DS(on) but demands more gate drive power and has reduced unclamped inductive switching ruggedness.

Availability

IRFH5301TRPBF is available at Aetrix Electronics and suitable for OR-ing power paths, synchronous buck converters, battery-powered motor inverters, and hot-swap controller interfaces requiring stable component supply across industrial and telecom production cycles.

Supply support for IRFH5301TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered for high-current, low-voltage DC-DC conversion in servers, telecom infrastructure, and battery-powered equipment where thermal density and switching efficiency are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C(bottom) = 100°C, the maximum continuous drain current is 50 A - derived from the derating curve in Figure 9, where ID decreases linearly from 100 A at 25°C to zero at 150°C, resulting in 50 A at 100°C. This value assumes proper PCB copper area and thermal via design per AN-1136.

Does IRFH5301TRPBF support 4.5 V gate drive in logic-level applications?

Yes - V_GS(th) is specified from 1.35 V to 2.35 V, and R_DS(on) is characterized down to V_GS = 4.5 V (2.4 mΩ max). At 4.5 V, it delivers ~70 A continuous current with acceptable conduction loss, making it suitable for 5 V or 3.3 V microcontroller-driven switches without level-shifting.

How is thermal performance affected if the bottom thermal pad is not soldered to PCB?

Without soldered thermal pad connection, R_θJC(bottom) degrades from 1.1 °C/W to >15 °C/W (R_θJC(top)), reducing maximum power dissipation from ~110 W to <7 W at 120 °C rise. This forces severe current derating and risks thermal runaway - full thermal pad soldering per IR's AN-1136 footprint is mandatory for rated performance.

Is the body diode suitable for continuous reverse conduction in half-bridge configurations?

The intrinsic body diode supports continuous source current up to 400 A (pulsed) and 100 A (DC), but its 1.0 V forward voltage and 53 nC Q_rr make it unsuitable for sustained reverse conduction. In half-bridge motor drives, it functions only during brief dead-time intervals; external Schottky or SiC diodes are required for forced commutation or regenerative braking paths.