Infineon Technologies IRFH7004TRPBF

Overview

IRFH7004TRPBF from Infineon Technologies is a 40 V, 100 A (package-limited), 1.1 mΩ typical R_DS(on) N-channel HEXFET Power MOSFET in PQFN 5×6 mm package, optimized for high-current synchronous rectification and half-bridge motor drive stages in battery-powered and resonant-mode power supplies.

For engineers reviewing the IRFH7004TRPBF datasheet, IRFH7004TRPBF pinout, IRFH7004TRPBF application, or IRFH7004TRPBF equivalent, key selection criteria include its 1.1 mΩ on-resistance at V_GS = 10 V, 129 nC total gate charge, 952 pF output capacitance, 100 A continuous drain rating at T_C = 25°C, and enhanced body diode dV/dt ruggedness up to 2.5 V/ns.

Technical Context

This device implements a trench-gate, silicon-based N-channel MOSFET architecture with fully characterized avalanche SOA and dynamic dV/dt ruggedness. Its low R_DS(on) and optimized gate charge profile support high-frequency switching in hard-switched and ZVS topologies.

The integrated body diode exhibits 0.95 V forward voltage at 100 A and 35 ns reverse recovery time, enabling efficient synchronous rectification and OR-ing functions without external Schottky diodes. Thermal performance is defined by 0.5°C/W junction-to-case (bottom-side) resistance.

Key Specifications

Pinout & Package

PQFN 5×6 mm package with exposed thermal pad (bottom-side cooling); 3-pin configuration (Source, Drain, Gate) with dual-side source terminals for current sharing and low-inductance layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IRFH7004TRPBF, IRFH7104TRPBF trades lower on-resistance for higher voltage rating-ideal for 48 V systems needing headroom-while SiR626DP offers reduced Q_g at minor C_oss penalty, favoring high-frequency soft-switching over ultra-low conduction loss.

Availability

IRFH7004TRPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across industrial automation, portable power tools, and telecom power systems.

Supply support for IRFH7004TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-efficiency switching in battery-powered and industrial power conversion systems where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current for IRFH7004TRPBF under real-world PCB conditions?

The package-limited continuous drain current is 100 A at T_C = 25°C when mounted on a 1-inch square 2 oz copper pad on FR-4. Actual achievable current depends on board layout, airflow, and thermal interface; derating to 75 A is typical for sustained operation at T_C = 80°C in enclosed enclosures.

Does IRFH7004TRPBF require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dv/dt and suppress oscillation. For 100–200 kHz switching with standard gate drivers, a 5–10 Ω series resistor is recommended. The datasheet specifies 50 Ω for avalanche testing; lower values (≤10 Ω) improve switching speed but increase EMI risk if layout inductance is high.

Can IRFH7004TRPBF be used in parallel configurations, and what layout considerations apply?

Yes-its positive temperature coefficient of R_DS(on) supports current sharing. Critical layout practices include matched gate trace lengths, Kelvin-connected source returns, symmetrical thermal pads, and individual gate resistors to prevent oscillatory coupling. Avoid shared source inductance paths that cause dynamic current imbalance.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

At 100 A, its 0.95 V V_SD is comparable to 45 V Schottky diodes, but with superior thermal coupling to the die and no leakage increase at high temperature. Unlike Schottky diodes, it avoids catastrophic failure under reverse overvoltage and provides controlled reverse recovery (35 ns), reducing EMI in high-di/dt applications.