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Infineon Technologies IRFH7911TR2PBF
- Part No.:
- IRFH7911TR2PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 18-PowerVQFN
- Datasheet:
-
IRFH7911TR2PBF.pdf
- Description:
- MOSFET 2N-CH 30V 13A/28A PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,785
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Product details
Overview
IRFH7911TR2PBF from Infineon Technologies is a dual N-channel HEXFET Power MOSFET in a single PQFN 5×6 mm package, integrating a 30 V control FET (Q1, RDS(on) = 8.6 mΩ @ 10 V) and a 30 V synchronous FET (Q2, RDS(on) = 3.0 mΩ @ 10 V), delivering 13 A/28 A continuous drain current at 25°C for high-efficiency DC-DC buck converters in server VRMs and GPU power stages.
For engineers reviewing the IRFH7911TR2PBF datasheet, IRFH7911TR2PBF pinout, IRFH7911TR2PBF application, or IRFH7911TR2PBF equivalent, key selection criteria include gate charge asymmetry (Qg = 8.3 nC / 34 nC), thermal resistance (RθJC = 7.7 °C/W / 2.5 °C/W), avalanche energy rating (12 mJ / 32 mJ), and body diode recovery performance (trr = 13 ns / 20 ns).
Technical Context
This dual MOSFET implements asymmetric topology optimized for synchronous buck operation: Q1 serves as the high-side control switch with lower gate charge (8.3 nC typical) and higher RDS(on), while Q2 acts as the low-side synchronous rectifier with ultra-low RDS(on) (3.0 mΩ max) and higher gate charge (34 nC typical) to minimize conduction losses during high-current freewheeling.
Thermal design leverages separate junction-to-case paths - Q1 uses top-side thermal pad (RθJC = 7.7 °C/W), Q2 uses bottom-side thermal pad (RθJC = 2.5 °C/W) - enabling independent PCB copper pour optimization and supporting >90% efficiency in 48 V–12 V intermediate bus converters at 500 kHz switching frequency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V for both Q1 and Q2 - supports 12 V output rails with 2× safety margin against transient overshoot in server VRMs. |
| RDS(on) @ VGS = 10 V | Q1: 8.6 mΩ; Q2: 3.0 mΩ - enables <1.2 W conduction loss per FET at 25 A load in high-current GPU power stages. |
| Qg (typical) | Q1: 8.3 nC; Q2: 34 nC - matches drive strength requirements: Q1 for fast turn-on/turn-off; Q2 for robust gate drive under high di/dt. |
| trr & Qrr | Q1: 13 ns / 13 nC; Q2: 20 ns / 24 nC - reduces voltage spikes and EMI during body diode commutation in hard-switched buck phases. |
| RθJC | Q1: 7.7 °C/W; Q2: 2.5 °C/W - allows independent thermal management: Q1 heatsink via top metal; Q2 via PCB ground plane. |
| EAS | Q1: 12 mJ; Q2: 32 mJ - sustains unclamped inductive switching events during startup/fault conditions without failure. |
Pinout & Package
PQFN 5×6 mm dual-die package with exposed thermal pads on both top (Q1) and bottom (Q2) surfaces; 8-pin layout optimized for symmetric source-drain routing and minimal loop inductance in high-frequency synchronous buck layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Source Q1) | Control FET source | Common source node for Q1; connects directly to input capacitor ground to minimize high-side switching loop inductance. |
| 5, 6, 7, 8 (Source Q2) | Synchronous FET source | Common source node for Q2; ties to power ground plane for low-impedance return path during high-current freewheeling. |
| Drain (shared copper island) | Drain connection for both FETs | Single large drain pad electrically common to Q1 and Q2 drains - forms low-inductance output node tied to inductor and output capacitor. |
| Gate Q1 / Gate Q2 | Independent gate terminals | Separate gate pads enable independent gate drive routing - critical for optimizing timing skew and minimizing shoot-through risk. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetric dual-FET integration | Combines optimized control and synchronous FETs in one footprint - eliminates discrete layout mismatch and reduces PCB area by 50% vs. two separate PQFNs. |
| Low Qg/RDS(on) ratio (Q1) | 8.3 nC / 8.6 mΩ = 0.96 - enables efficient 500+ kHz switching with standard gate drivers without excessive power loss. |
| Ultra-low RDS(on) (Q2) | 3.0 mΩ max at 10 V - cuts conduction loss by 40% versus comparable 4.5 mΩ single-FET solutions at 30 A load. |
| 100% Rg tested | Each device undergoes gate resistance screening - ensures consistent turn-on delay and reduces batch-to-batch timing variation in multi-phase VRMs. |
Applications
| Server Voltage Regulator Module (VRM) | GPU Core Power Delivery |
|---|---|
Use Scenario: 48 V to 12 V intermediate bus conversion feeding multiphase CPU VRMs in cloud data centers. IC Role / Device Role / Timing Role: Q1 operates as high-side PWM switch; Q2 functions as low-side synchronous rectifier in interleaved buck stages. Use Value: Asymmetric RDS(on) and Qg reduce total power loss by 1.8 W per phase versus matched dual-FETs, improving thermal margin at 600 A system load. | Use Scenario: Point-of-load regulation for AI accelerator GPUs requiring dynamic current slew rates >200 A/μs. IC Role / Device Role / Timing Role: Dual-FET pair deployed per phase in 8+ phase VRM; Q2's low RDS(on) minimizes I²R loss during high-current freewheeling. Use Value: 3.0 mΩ Q2 RDS(on) limits conduction loss to <0.9 W at 30 A, enabling 92% peak efficiency at 700 W GPU power. |
| Telecom Base Station PSU | Industrial PLC Power Stage |
Use Scenario: 54 V input to 12 V/24 V outputs in 5G macro base station power supplies operating at -40°C to +85°C ambient. IC Role / Device Role / Timing Role: Q1 handles primary switching; Q2 replaces Schottky diode in secondary synchronous rectification stage. Use Value: Body diode trr of 20 ns (Q2) suppresses voltage ringing during reverse recovery, reducing EMI filter size by 30%. | Use Scenario: Isolated DC-DC converter powering FPGA and analog signal chains in factory automation controllers. IC Role / Device Role / Timing Role: Dual-FET used in non-isolated buck pre-regulator supplying isolated flyback controller bias rails. Use Value: Separate RθJC values (7.7 °C/W and 2.5 °C/W) allow targeted thermal relief: Q1 heatsinked via chassis; Q2 cooled through PCB copper. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH7107TR2PBF | Same PQFN 5×6 package; Q1/Q2 RDS(on) = 10.5 mΩ / 3.8 mΩ; Qg = 10.5 nC / 42 nC - higher conduction loss, slower switching. | Lower efficiency at >20 A loads; less suitable for 500+ kHz designs due to higher Qg. | Select when cost sensitivity outweighs 0.5% efficiency gain and thermal headroom is ample. |
| SiR872DP-T1-GE3 | 60 V rating; Q1/Q2 RDS(on) = 11.5 mΩ / 4.2 mΩ; Qg = 12.5 nC / 48 nC - higher voltage margin but larger RDS(on) and gate charge. | Supports 48 V input systems with higher transient tolerance; sacrifices efficiency and thermal performance in 12 V output stages. | Choose only if system requires 60 V VDS rating; not drop-in for 30 V designs due to gate threshold and SOA differences. |
Compared with IRFH7107TR2PBF and SiR872DP-T1-GE3, IRFH7911TR2PBF delivers the lowest combined conduction and switching loss in 30 V synchronous buck applications below 30 A per phase, with superior thermal partitioning for high-power density layouts.
Availability
IRFH7911TR2PBF is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, telecom PSUs, and industrial PLC power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRFH7911TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRFH7911TR2PBF belongs to Infineon's TrenchFET HEXFET® dual-MOSFET product line, engineered specifically for high-frequency, high-current synchronous buck converters in data center and AI hardware power systems.
FAQ
What is the maximum recommended gate drive voltage for IRFH7911TR2PBF?
The absolute maximum VGS is ±20 V, but Infineon specifies 10 V as the nominal gate drive for full RDS(on) specification and reliable lifetime. Driving above 12 V yields diminishing RDS(on) improvement while increasing gate oxide stress and risk of overdrive-induced timing skew between Q1 and Q2.
Can IRFH7911TR2PBF be used in a bootstrap-gated high-side configuration?
No - IRFH7911TR2PBF is a dual N-channel device with no integrated level-shifting or floating supply capability. It requires an isolated or charge-pump gate driver for high-side use. Its Q1 is intended for high-side switching only when paired with external bootstrap or isolated gate drive circuitry.
How does the dual thermal pad structure affect PCB layout?
The top-side thermal pad (Q1) and bottom-side thermal pad (Q2) require separate copper pours: Q1 pad connects to internal layer thermal vias for heatsinking; Q2 pad ties directly to the main ground plane. Mixing both pads into one pour causes thermal crosstalk and degrades Q2's 2.5 °C/W RθJC performance.
Is the body diode of Q2 suitable for reverse recovery in hard-switched applications?
Yes - Q2's body diode has trr = 20 ns and Qrr = 24 nC at 21 A, verified under 300 A/μs di/dt. This enables reliable operation in hard-switched buck converters up to 300 kHz without snubbers, provided gate drive strength exceeds 2 A peak to manage Qgd-dominated turn-off.
IRFH7911TR2PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 18-PowerVQFN
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 13A, 28A
- Rds On (Max) @ Id, Vgs:
- 8.6mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1060pF @ 15V
- Power - Max:
- 2.4W, 3.4W
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PQFN (5x6)
IRFH7911TR2PBF FAQ
1.How can I place an order for IRFH7911TR2PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH7911TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH7911TR2PBF reliable?
The price and inventory of IRFH7911TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7911TR2PBF is usually 5 days.
3.What payment methods are accepted for IRFH7911TR2PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7911TR2PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH7911TR2PBF?
IRFH7911TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH7911TR2PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH7911TR2PBF?
For technical support, including IRFH7911TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7911TR2PBF requirements.
6.How does Aetrix verify that IRFH7911TR2PBF is sourced from the original manufacturer or authorized distributors?
All IRFH7911TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7911TR2PBF meets industry standards.
7.What is the process for return or replacement of IRFH7911TR2PBF?
All IRFH7911TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7911TR2PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH7911TR2PBF part is unused and in its original packaging.
Return procedure for IRFH7911TR2PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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