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Infineon Technologies IRFH7911TRPBF
- Part No.:
- IRFH7911TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 18-PowerVQFN
- Datasheet:
-
IRFH7911TRPBF.pdf
- Description:
- MOSFET 2N-CH 30V 13A/28A PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,774
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Product details
Overview
IRFH7911TRPBF from Infineon Technologies is a dual N-channel HEXFET Power MOSFET in a single PQFN 5×6 mm package, integrating a 30 V control FET (Q1, RDS(on) = 8.6 mΩ @ 10 V) and a 30 V synchronous FET (Q2, RDS(on) = 3.0 mΩ @ 10 V), optimized for high-efficiency DC-DC buck converters in server VRMs and POL modules.
For engineers reviewing the IRFH7911TRPBF datasheet, IRFH7911TRPBF pinout, IRFH7911TRPBF application, or IRFH7911TRPBF equivalent, key selection criteria include gate charge asymmetry (Qg = 8.3 nC / 34 nC), thermal resistance (RθJC = 7.7 °C/W / 2.5 °C/W), and avalanche energy rating (12 mJ / 32 mJ) for robust transient handling in synchronous rectification topologies.
Technical Context
This dual MOSFET implements asymmetric channel pairing: Q1 serves as the high-side control switch with lower gate charge (8.3 nC typical) and higher RDS(on), while Q2 functions as the low-side synchronous rectifier with ultra-low RDS(on) (3.0 mΩ max) and higher gate charge (34 nC typical), enabling optimized timing control and conduction loss trade-offs.
Thermal design leverages separate junction-to-case paths (7.7 °C/W for Q1, 2.5 °C/W for Q2) and distinct SOA limits-Q1 rated for 13 A continuous at 25°C, Q2 for 28 A-supporting independent current handling in asymmetric duty-cycle applications such as multiphase CPU core power delivery.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V for both Q1 and Q2 - supports 12 V input bus with margin for voltage transients in server POL systems |
| RDS(on) @ VGS = 10 V | 8.6 mΩ (Q1), 3.0 mΩ (Q2) - enables <1.5 W conduction loss per FET at 20 A, critical for >90% efficiency targets |
| Qg (typical) | 8.3 nC (Q1), 34 nC (Q2) - allows fast turn-on of control FET while accommodating slower, lower-loss switching of synchronous FET |
| TJ max | +150 °C - permits operation in thermally constrained VRM layouts without derating below full load |
| EAS | 12 mJ (Q1), 32 mJ (Q2) - withstands unclamped inductive energy during hard-switching events in multiphase buck converters |
| RθJA | 53 °C/W (Q1), 37 °C/W (Q2) - reflects asymmetric thermal coupling to PCB copper; Q2 benefits from lower thermal resistance due to larger source pad area |
Pinout & Package
IRFH7911TRPBF uses a 12-pin PQFN 5×6 mm package with exposed drain pads for Q1 and Q2 on the bottom side. Pin numbering follows standard JEDEC MS-012AC outline with dual-source configuration enabling independent gate drive routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Control FET gate | Drives Q1 (higher-Vth, lower-Qg) with standard 10 V logic-level signal; requires <2 Ω gate resistor for <12 ns td(on) |
| S1 | Control FET source | Common source node for Q1; connects to high-side switch node and gate driver return path |
| D1 | Control FET drain | Connects to input rail (e.g., 12 V); shares thermal pad with Q2 drain but electrically isolated |
| G2 | Synchronous FET gate | Drives Q2 (lower-Vth, higher-Qg) with same gate driver; requires higher-current drive capability |
| S2 | Synchronous FET source | Output node (e.g., 1.8 V); ties to power inductor and output capacitor; forms body diode anode |
| D2 | Synchronous FET drain | Connected to ground plane via large thermal pad; carries full output current with minimal voltage drop |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetric dual-FET integration | Single-package pairing of control + synchronous FET eliminates layout mismatch and reduces parasitic inductance by >30% vs discrete solutions |
| Low-profile PQFN (≤0.9 mm) | Enables compact VRM designs under height-constrained CPU sockets and improves thermal transfer to PCB |
| 100% Rg tested | Guarantees gate resistance ≤1.8 Ω (Q1) and ≤0.7 Ω (Q2), ensuring consistent switching speed and reducing risk of oscillation |
| RoHS-compliant, halogen-free | Meets IPC-J-STD-609A Class 1 requirements for lead-free assembly and environmental compliance in datacenter hardware |
Applications
| Server Voltage Regulator Module (VRM) | Point-of-Load (POL) Converter |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel Xeon or AMD EPYC processors. IC Role / Device Role / Timing Role: Q1 acts as high-side control switch; Q2 serves as low-side synchronous rectifier with complementary gate timing. Use Value: Asymmetric RDS(on) and Qg reduce total power loss by 18% vs matched dual-FETs, enabling 200 A+ output with <30 °C temperature rise. | Use Scenario: Compact 12 V–to–1.0 V step-down regulator on GPU or ASIC daughterboards. IC Role / Device Role / Timing Role: Dual-FET replaces two discrete MOSFETs, minimizing PCB footprint and gate loop inductance. Use Value: 5×6 mm PQFN saves 50% board area vs two separate 5×6 packages, supporting >92% peak efficiency at 40 A load. |
| Telecom Baseband Power Supply | Industrial FPGA Core Rail |
Use Scenario: 48 V–to–12 V intermediate bus converter feeding downstream POL stages in 5G radio units. IC Role / Device Role / Timing Role: Q1 handles primary switching; Q2 provides low-loss synchronous rectification during freewheeling phase. Use Value: EAS = 32 mJ (Q2) sustains repeated 10 A inductive spikes without failure, improving system reliability in burst-mode operation. | Use Scenario: Reconfigurable power rail for Xilinx Versal or Intel Agilex FPGAs requiring dynamic voltage scaling. IC Role / Device Role / Timing Role: Dual-FET operates in adaptive on-time control mode with independent gate drive timing calibration. Use Value: Low RDS(on) (3.0 mΩ) minimizes voltage droop during 100 A transient loads, maintaining <±2% regulation tolerance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH7107TRPBF | 30 V/40 V dual, Q1 RDS(on) = 11.5 mΩ, Q2 RDS(on) = 4.0 mΩ; higher Qg (11 nC / 42 nC) | Targeted for lower-frequency (<500 kHz) VRMs where gate drive loss is less critical | Select when thermal budget allows higher RDS(on) and cost sensitivity outweighs efficiency gain |
| SiR872DP-T1-GE3 | 30 V dual, Q1/Q2 RDS(on) = 7.0 mΩ / 2.8 mΩ; tighter RDS(on) tolerance but no EAS spec published | Used in consumer-grade notebooks; lacks industrial-grade avalanche rating documentation | Prefer only for non-safety-critical applications where unclamped inductive stress is absent |
Compared with IRFH7107TRPBF and SiR872DP-T1-GE3, IRFH7911TRPBF delivers superior gate charge asymmetry (8.3/34 nC) and documented avalanche robustness (12/32 mJ), making it optimal for high-reliability, high-frequency server VRMs where switching loss and transient immunity are prioritized.
Availability
IRFH7911TRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial FPGA power supplies, and baseband power systems requiring stable component supply across multi-year production cycles.
Supply support for IRFH7911TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with over 30 years of MOSFET innovation.
The IRFH7911TRPBF belongs to Infineon's TrenchStop™ HEXFET® dual-MOSFET product line, engineered specifically for high-density, high-efficiency synchronous buck converters in datacenter and communications infrastructure.
FAQ
What is the maximum continuous drain current for each FET at 70°C ambient?
At TA = 70°C, Q1 supports 10 A continuous drain current and Q2 supports 23 A, based on thermal derating from the 2.4 W and 3.4 W power dissipation ratings at 25°C and linear derating factors of 0.019 W/°C and 0.027 W/°C respectively. These values assume proper PCB copper area and airflow per Infineon's recommended layout.
Can IRFH7911TRPBF be used in a bootstrap-gated high-side configuration?
No-IRFH7911TRPBF integrates two N-channel FETs with common-source configuration and no internal level-shifting circuitry. It is designed exclusively for low-side synchronous rectification or dual-N-channel half-bridge layouts with isolated gate drivers; bootstrap operation requires external high-side driver ICs like IRS2186.
Does the device include integrated Schottky body diodes?
No-the device uses standard silicon planar N-channel MOSFETs with integral reverse p–n junction body diodes, as confirmed by diode forward voltage (VSD = 1.0 V typ.) and reverse recovery parameters (trr = 13–29 ns). No Schottky or trench-Schottky structure is present; performance matches standard HEXFET body diode characteristics.
What is the gate threshold voltage range and its temperature coefficient?
VGS(th) is 1.35–2.35 V at 25°C for both FETs; Q1 has ΔVGS(th)/ΔTJ = −6.8 mV/°C and Q2 has −6.4 mV/°C. This negative coefficient ensures gate turn-off becomes more robust at elevated temperatures, supporting stable operation up to +150°C junction temperature without unintended conduction.
IRFH7911TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 18-PowerVQFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 13A, 28A
- Rds On (Max) @ Id, Vgs:
- 8.6mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1060pF @ 15V
- Power - Max:
- 2.4W, 3.4W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PQFN (5x6)
IRFH7911TRPBF FAQ
1.How can I place an order for IRFH7911TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH7911TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH7911TRPBF reliable?
The price and inventory of IRFH7911TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7911TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH7911TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7911TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH7911TRPBF?
IRFH7911TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH7911TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH7911TRPBF?
For technical support, including IRFH7911TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7911TRPBF requirements.
6.How does Aetrix verify that IRFH7911TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH7911TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7911TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH7911TRPBF?
All IRFH7911TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7911TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH7911TRPBF part is unused and in its original packaging.
Return procedure for IRFH7911TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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