Infineon Technologies IRFH8303TRPBF

Overview

IRFH8303TRPBF from Infineon Technologies is a 30 V, 290 A (T_C = 25°C) N-channel Trench MOSFET in PQFN 5 mm × 6 mm package, optimized as a high-current synchronous buck converter control FET with R_DS(on) ≤ 1.10 mΩ at V_GS = 10 V, Q_g = 58 nC (typ), and R_θJC(bottom) ≤ 0.8°C/W for high-efficiency server VRMs and AI accelerator power stages.

For engineers reviewing the IRFH8303TRPBF datasheet, IRFH8303TRPBF pinout, IRFH8303TRPBF application, or IRFH8303TRPBF equivalent, key selection criteria include low-conduction-loss capability at >200 A continuous drain current, gate charge optimization for 1–2 MHz switching, thermal interface design to PCB via bottom-side thermal pad, and compatibility with standard surface-mount reflow profiles under MSL1 conditions.

Technical Context

This device implements Infineon's StrongIRFET™ TrenchMOS architecture with integrated body diode and avalanche-rated operation (E_AS = 355 mJ). It delivers sub-1.1 mΩ on-resistance at 10 V gate drive while maintaining fast switching (t_r = 91 ns, t_f = 65 ns) and low reverse transfer capacitance (C_rss = 743 pF) for reduced Miller-induced turn-on risk in hard-switched topologies.

The PQFN 5×6 mm package features dual-sided thermal path: low R_θJC(bottom) = 0.8°C/W to PCB and R_θJA = 34°C/W (standard JEDEC 2s2p board), enabling direct thermal coupling to multi-layer copper planes without heatsinks in compact VRM designs.

Key Specifications

Pinout & Package

PQFN 5 mm × 6 mm package with exposed thermal pad (pin 1 identifier marked), 8-pin layout, MSL1 rating, and bottom-side thermal interface designed for solder reflow to PCB copper plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current control MOSFET applications.

Compared with IXTH30N30P and STL220N3LLH6, IRFH8303TRPBF delivers superior current density (290 A in 30 mm²), lowest gate charge among 30 V alternatives, and guaranteed R_g for precise parallel operation-making it optimal for space-constrained, high-frequency server and AI power stages.

Availability

IRFH8303TRPBF is available at Aetrix Electronics and suitable for server VRMs, AI accelerator power stages, and telecom base station PSUs requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for IRFH8303TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers.

This part belongs to Infineon's StrongIRFET™ family, engineered specifically for high-current, high-frequency DC-DC conversion in data center, AI, and telecom infrastructure where low R_DS(on), fast switching, and robust thermal performance are mandatory.

FAQ

What is the recommended PCB layout for thermal management of IRFH8303TRPBF?

The exposed drain pad must be connected to ≥4 thermal vias (0.3 mm diameter, 0.5 mm pitch) filled with solder and routed to inner-layer copper planes totaling ≥200 mm² of 2 oz copper. AN-1136 specifies minimum 6.3 mm × 5.3 mm stencil aperture and 120 µm thickness for optimal solder paste volume and void reduction.

Can IRFH8303TRPBF be paralleled with identical units without external gate resistors?

Yes-100% R_g testing ensures gate resistance variation ≤±0.1 Ω across units, enabling direct parallel connection without individual gate resistors. However, matched gate trace lengths (<1 mm length difference) and symmetric source inductance are required to prevent current imbalance at >100 A/µs dI/dt.

What is the maximum allowable case temperature for continuous 290 A operation?

Continuous 290 A operation is rated only at T_C = 25°C. At T_C = 100°C, the maximum continuous drain current drops to 183 A per datasheet derating curve (Figure 9). Sustained 290 A requires active cooling to maintain case temperature ≤45°C using multilayer PCB thermal design.

Does IRFH8303TRPBF support 4.5 V gate drive in synchronous buck applications?

Yes-R_DS(on) = 1.30–1.70 mΩ at V_GS = 4.5 V enables use with 5 V logic-level gate drivers. However, Q_g increases to 87 nC (vs. 58 nC at 10 V), raising switching losses by ~25% at 1 MHz; 10 V drive is recommended for optimal efficiency in high-frequency VRMs.