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Infineon Technologies IRFH8311TRPBF
- Part No.:
- IRFH8311TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TQFN Exposed Pad
- Datasheet:
-
IRFH8311TRPBF.pdf
- Description:
- MOSFET N CH 30V 32A PQFN5X6
- Quantity:
- Payment:
- Shipping:
Inventory:42,714
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Product details
Overview
IRFH8311TRPBF from Infineon Technologies is a 30 V, 80 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized as a synchronous rectifier in high-frequency buck converters. It delivers RDS(on) of 1.7 mΩ (typ.) at VGS = 10 V and 2.6 mΩ (max.) at VGS = 4.5 V, with 30 nC total gate charge and 1.3 °C/W junction-to-case (bottom) thermal resistance.
For engineers reviewing the IRFH8311TRPBF datasheet, IRFH8311TRPBF pinout, IRFH8311TRPBF application, or IRFH8311TRPBF equivalent, key selection criteria include low-profile thermal performance, industrial-grade MSL1 qualification, 30 V VDS rating, and compatibility with multi-vendor synchronous buck topologies requiring <1.2 mm height and high current density.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low RDS(on) and fast switching with Qg = 30 nC (typ.) and Qgd = 8.6 nC. Its PQFN 5×6 mm package features exposed drain pad on bottom for direct PCB thermal conduction and industry-standard pinout (Drain–Source–Gate–Source–Drain).
The device supports continuous drain current up to 80 A at TC(Bottom) = 25 °C, with avalanche-rated EAS = 326 mJ and body diode trr = 22–33 ns. Gate threshold voltage is tightly specified at 1.35–2.35 V, enabling robust 4.5 V logic-level drive in DC-DC converter control stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Supports input rails up to 24 V nominal in point-of-load converters |
| RDS(on) max @ 10 V | 2.1 mΩ - Enables <1 W conduction loss at 20 A continuous current |
| RDS(on) max @ 4.5 V | 3.2 mΩ - Ensures reliable turn-on with standard 5 V PWM controllers |
| Qg typ. | 30 nC - Reduces gate driver power demand and switching transition time |
| RθJC (Bottom) | <1.3 °C/W - Allows direct thermal coupling to inner PCB copper layers for high-power density |
| tr/tf | 26 ns / 12 ns - Supports >1 MHz switching frequencies with minimal overlap loss |
| ID @ TC = 25 °C | 80 A - Sustains high output current in compact 5×6 mm footprint |
Pinout & Package
PQFN 5×6 mm package with exposed drain pad on bottom surface; 5-pin configuration (D-S-G-S-D) supporting dual-drain parallel routing for reduced source inductance and improved current sharing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | Main current path from drain to channel | Connected to input rail or inductor node; electrically tied to exposed bottom pad |
| Pin 2 (Source) | Source terminal of N-channel device | Reference node for gate drive; routed to ground plane or low-side switch node |
| Pin 3 (Gate) | Control electrode for channel modulation | High-impedance input requiring <30 nC charge for full enhancement |
| Pin 4 (Source) | Secondary source connection | Reduces source loop inductance in high-di/dt synchronous rectification |
| Pin 5 (Drain) | Secondary drain connection | Parallel path to Pin 1; lowers overall RDS(on) and thermal resistance |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile PQFN package | Height <1.2 mm enables ultra-thin power modules and VRM designs |
| MSL1 industrial qualification | Guarantees reflow reliability without moisture sensitivity concerns |
| RoHS-compliant, halogen-free | Meets IPC/JEDEC J-STD-020D.1 and environmental compliance mandates |
| Enhanced body diode trr | 22–33 ns reverse recovery time reduces shoot-through risk in synchronous operation |
| Multi-vendor pinout compatibility | Standard 5×6 mm layout allows drop-in replacement across supplier families |
Applications
| Server VRMs | GPU Power Delivery |
|---|---|
Use Scenario: High-current, multi-phase buck converters supplying CPU/GPU core voltage (0.6–1.2 V) at up to 600 A per rail. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET operating in continuous conduction mode at 500 kHz–1 MHz switching frequency. Use Value: 1.7 mΩ RDS(on) minimizes conduction loss; 1.3 °C/W RθJC enables direct thermal transfer to PCB heatsink layer. | Use Scenario: Compact, high-density power stages on graphics card PCBs where height clearance is limited to <1.2 mm. IC Role / Device Role / Timing Role: Low-side synchronous FET in interleaved 2-phase or 3-phase buck topology with integrated controller. Use Value: Dual-source/dual-drain pinout reduces parasitic inductance; PQFN footprint supports automated placement and high-yield reflow. |
| Telecom DC-DC Modules | Industrial PLC Power Supplies |
Use Scenario: 48 V input to 3.3/5/12 V isolated or non-isolated converters in base station power shelves. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in high-efficiency forward or active-clamp forward converters. Use Value: 30 V VDS rating accommodates transient overshoot; 326 mJ EAS withstands unclamped inductive switching stress. | Use Scenario: DIN-rail mounted programmable logic controller power supplies requiring long-term reliability under 60 °C ambient. IC Role / Device Role / Timing Role: Primary-side high-side switch or secondary-side synchronous rectifier in 24 V output buck converters. Use Value: MSL1 qualification ensures process stability; -55 °C to +150 °C TJ range supports extended industrial temperature operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH5004TRPBF | RDS(on) = 3.2 mΩ @ 10 V (higher), Qg = 22 nC (lower), same PQFN 5×6 mm package | Suitable for lower-current (<50 A) or cost-sensitive designs where thermal margin is less constrained | Select when gate drive capability is limited but peak current demand is moderate |
| SiR872DP-T1-GE3 | RDS(on) = 1.9 mΩ @ 10 V, Qg = 36 nC, same 30 V rating and PQFN 5×6 mm footprint | Better conduction loss at high current but higher gate charge increases driver loss at high frequency | Prefer for <500 kHz operation where conduction dominates; avoid above 800 kHz due to Qg penalty |
Compared with IRFH5004TRPBF and SiR872DP-T1-GE3, IRFH8311TRPBF offers the best balance of ultra-low RDS(on), moderate Qg, and proven thermal performance in high-frequency, high-current synchronous buck stages-making it optimal for server VRMs and GPU power delivery where both efficiency and thermal headroom are critical.
Availability
IRFH8311TRPBF is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, and telecom DC-DC modules requiring stable component supply, industrial temperature operation, and high-current synchronous rectification capability.
Supply support for IRFH8311TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRFH8311TRPBF belongs to Infineon's TrenchFET HEXFET® family, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter and computing infrastructure applications.
FAQ
What is the maximum continuous drain current for IRFH8311TRPBF at 100 °C case temperature?
At TC(Bottom) = 100 °C, the maximum continuous drain current is 40 A (per datasheet Absolute Maximum Ratings table). This derating reflects thermal limits of the PQFN package and PCB thermal design; actual usable current depends on copper area, layer count, and airflow.
Does IRFH8311TRPBF support 4.5 V gate drive in synchronous buck applications?
Yes - its RDS(on) is specified at 2.6–3.2 mΩ max with VGS = 4.5 V, and VGS(th) is 1.35–2.35 V, ensuring full enhancement with standard 5 V logic-level drivers. Body diode trr of 22–33 ns further supports clean commutation.
How does the PQFN 5×6 mm package improve thermal performance over SO-8?
The PQFN package uses an exposed drain pad soldered directly to the PCB, achieving RθJC(bottom) <1.3 °C/W - over 3× better than typical SO-8 RθJC (~4.5 °C/W). This enables higher sustained current in space-constrained layouts without external heatsinks.
Is IRFH8311TRPBF qualified for automotive applications?
No - it carries industrial qualification (MSL1, -55 °C to +150 °C), but lacks AEC-Q101 certification or automotive-specific screening. For automotive use, consider Infineon's OptiMOS™ 6 series or AEC-Q101-qualified variants like IRFH7107TRPBF.
IRFH8311TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Ta), 169A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 66 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4960 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 96W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PQFN (5x6)
IRFH8311TRPBF FAQ
1.How can I place an order for IRFH8311TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH8311TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH8311TRPBF reliable?
The price and inventory of IRFH8311TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH8311TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH8311TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH8311TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH8311TRPBF?
IRFH8311TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH8311TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH8311TRPBF?
For technical support, including IRFH8311TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH8311TRPBF requirements.
6.How does Aetrix verify that IRFH8311TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH8311TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH8311TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH8311TRPBF?
All IRFH8311TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH8311TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH8311TRPBF part is unused and in its original packaging.
Return procedure for IRFH8311TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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