Infineon Technologies IRFH8318TRPBF
- Part No.:
- IRFH8318TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
IRFH8318TRPBF.pdf
- Description:
- MOSFET N-CH 30V 27A/120A PQFN
- Quantity:
- Payment:

- Shipping:

Inventory:23,294
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Product details
Overview
IRFH8318TRPBF from Infineon Technologies is a 30 V, 50 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized as a synchronous rectifier in high-frequency buck converters. It delivers RDS(on) = 2.5 mΩ (typ) at VGS = 10 V, Qg = 19 nC (typ), and features ultra-low thermal resistance RθJC(Bottom) = 1.7 °C/W for direct PCB heat transfer.
For engineers reviewing the IRFH8318TRPBF datasheet, IRFH8318TRPBF pinout, IRFH8318TRPBF application, or IRFH8318TRPBF equivalent, key selection criteria include its 30 V VDS, 2.5 mΩ on-resistance at 10 V gate drive, 19 nC total gate charge, PQFN 5×6 mm footprint with bottom-side thermal pad, and suitability for high-efficiency DC-DC conversion in space-constrained power stages.
Technical Context
This device operates as a low-side synchronous rectifier in fixed-frequency or adaptive-frequency buck regulators. Its 30 V VDS rating supports 12 V and 24 V input rails, while the 2.5 mΩ RDS(on) minimizes conduction loss at 20–50 A load currents. The 19 nC Qg enables fast switching with moderate gate drive strength.
Thermal design leverages the PQFN's exposed bottom thermal pad and 1.7 °C/W RθJC(Bottom), allowing direct copper pour attachment to PCB ground planes. Body diode parameters-VSD = 1.0 V (max), trr = 16–24 ns, Qrr = 35–53 nC-support efficient reverse recovery during dead-time transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Supports 12 V/24 V input bus with margin for voltage spikes in buck topologies |
| RDS(on) @ VGS = 10 V | 2.5 mΩ (typ) - Enables <100 mW conduction loss at 20 A continuous drain current |
| Qg | 19 nC (typ) - Allows clean turn-on with ≤1 A peak gate driver without excessive switching loss |
| ID @ TC(Bottom) = 25°C | 50 A - Sustains high output current in compact 5×6 mm footprint with proper PCB copper |
| RθJC(Bottom) | 1.7 °C/W (max) - Permits >40 W power dissipation with 70°C temperature rise to PCB |
| VGS(th) | 1.35–2.35 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers |
| trr | 16–24 ns - Limits reverse recovery energy and EMI during synchronous rectification |
Pinout & Package
PQFN 5×6 mm Outline "E" package with exposed bottom thermal pad and three surface-mount terminals: Drain (D), Source (S), and Gate (G). Thermal pad must be soldered to PCB copper for rated current and thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | High-side connection point to input rail | Internally connected to die backside; requires low-inductance routing to minimize switching overshoot |
| S (Source) | Low-side connection to output node and return path | Common reference for gate drive and output sensing; tied directly to power ground plane |
| G (Gate) | Control terminal for channel modulation | High-impedance input requiring controlled slew rate to suppress ringing; routed away from noisy power traces |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RθJC(Bottom) | 1.7 °C/W max - Enables direct thermal coupling to PCB, eliminating need for heatsinks in 30–50 W applications |
| Low-profile package | 1.2 mm max height - Fits under 1.5 mm board-to-board connectors and in thin server VRMs |
| Industry-standard pinout | Three-terminal D-S-G layout - Compatible with layout footprints of competing 30 V PQFN MOSFETs (e.g., SiR872DP, CSD18540Q5B) |
| RoHS & halogen-free | No lead, bromide, or halogen - Meets IPC-1752A Class 2 material declaration requirements for consumer and industrial end equipment |
| MSL1 qualification | Unlimited floor life at ≤30°C/60% RH - Eliminates bake requirements prior to reflow assembly |
Applications
| Server Voltage Regulator Modules | Telecom Point-of-Load Converters |
|---|---|
Use Scenario: 48 V to 12 V intermediate bus conversion feeding CPU/GPU VRMs in 1U rack servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck stage operating at 500 kHz–1 MHz. Use Value: 2.5 mΩ RDS(on) reduces conduction loss by ≥15% versus 3.6 mΩ alternatives, improving full-load efficiency by 0.4–0.6%. | Use Scenario: 12 V to 3.3 V/1.8 V conversion for FPGA I/O banks and SerDes supplies in 5G baseband units. IC Role / Device Role / Timing Role: Secondary-side switch in high-density POL modules with 300–600 kHz switching frequency. Use Value: 19 nC Qg and 16–24 ns trr enable clean zero-voltage switching transitions, reducing EMI filter size by 30%. |
| Industrial Motor Drive Gate Drivers | Automotive ADAS Power Supplies |
Use Scenario: Auxiliary 12 V supply for isolated gate driver ICs in 3-phase inverter stacks. IC Role / Device Role / Timing Role: High-efficiency buck converter delivering 2 A at 5 V for ISO78xx series isolators and UCCx family gate drivers. Use Value: PQFN 5×6 mm footprint allows integration into tight gate-driver PCB layouts without compromising thermal headroom. | Use Scenario: Powering radar sensor SoCs and camera ISPs in front-end ADAS ECUs with strict EMC limits. IC Role / Device Role / Timing Role: Primary synchronous rectifier in 12 V input buck regulator running at 2 MHz for low-noise analog supply rails. Use Value: 1.2 mm profile avoids interference with stacked camera modules; MSL1 rating ensures reliability across automotive reflow profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 2.7 mΩ @ 10 V; Qg = 21 nC; same PQFN 5×6 mm | Slightly higher conduction loss; identical thermal pad layout | Select when dual-source qualification is required and 0.2 mΩ RDS(on) tolerance is acceptable |
| CSD18540Q5B | RDS(on) = 2.9 mΩ @ 10 V; Qg = 17 nC; same footprint but different marking orientation | Lower gate charge improves switching speed; marginally higher on-resistance | Prefer for designs prioritizing gate drive simplicity over minimal conduction loss |
Compared with SiR872DP-T1-GE3 and CSD18540Q5B, IRFH8318TRPBF offers the lowest RDS(on) in this 30 V PQFN class, making it optimal for thermally constrained, high-current buck stages where conduction loss dominates efficiency calculations.
Availability
IRFH8318TRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drive auxiliary supplies requiring stable component supply and long-term production continuity.
Supply support for IRFH8318TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to IATF 16949 and ISO 9001.
This part belongs to Infineon's OptiMOS™ 5 family of low-voltage power MOSFETs, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRFH8318TRPBF supports 120 A continuous drain current when the bottom-case temperature is maintained at 25°C, but derates to 50 A at TC(Bottom) = 100°C per the datasheet's absolute maximum ratings table. This reflects thermal limitation of the internal bond wires and package structure-not silicon capability-and assumes full thermal pad soldering to ≥1 in² 2-oz copper.
Does this MOSFET require a negative gate voltage for safe operation?
No. The IRFH8318TRPBF has a ±20 V VGS rating and operates reliably with 0 V to +10 V gate drive. Negative gate bias is not required for turn-off; however, applying –5 V during off-state can reduce Miller-induced false turn-on in high-dV/dt environments such as multi-phase interleaved converters.
Can it be used in avalanche-rated applications?
Yes-its single-pulse avalanche energy EAS is rated at 160 mJ at TJ = 25°C (ID = 20 A). This supports limited unclamped inductive switching events, such as those occurring during startup or fault conditions in buck converters. Continuous avalanche operation is not recommended due to uncontrolled junction temperature rise.
Is the PQFN 5×6 mm package compatible with standard reflow profiles?
Yes-the IRFH8318TRPBF is qualified to MSL1 per J-STD-020, meaning it may be stored indefinitely at ≤30°C/60% RH and processed using standard lead-free reflow profiles (peak 260°C, 20–40 sec above 217°C) without preconditioning or baking, provided moisture barrier bags remain sealed until use.
IRFH8318TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 27A (Ta), 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3180 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 59W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PQFN (5x6)
IRFH8318TRPBF FAQ
1.How can I place an order for IRFH8318TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH8318TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH8318TRPBF reliable?
The price and inventory of IRFH8318TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH8318TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH8318TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH8318TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH8318TRPBF?
IRFH8318TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH8318TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH8318TRPBF?
For technical support, including IRFH8318TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH8318TRPBF requirements.
6.How does Aetrix verify that IRFH8318TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH8318TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH8318TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH8318TRPBF?
All IRFH8318TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH8318TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH8318TRPBF part is unused and in its original packaging.
Return procedure for IRFH8318TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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