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Infineon Technologies IRFH8318TRPBF

Part No.:
IRFH8318TRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixIRFH8318TRPBF.pdf
Description:
MOSFET N-CH 30V 27A/120A PQFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:23,294

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Product details

Overview

IRFH8318TRPBF from Infineon Technologies is a 30 V, 50 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized as a synchronous rectifier in high-frequency buck converters. It delivers RDS(on) = 2.5 mΩ (typ) at VGS = 10 V, Qg = 19 nC (typ), and features ultra-low thermal resistance RθJC(Bottom) = 1.7 °C/W for direct PCB heat transfer.

For engineers reviewing the IRFH8318TRPBF datasheet, IRFH8318TRPBF pinout, IRFH8318TRPBF application, or IRFH8318TRPBF equivalent, key selection criteria include its 30 V VDS, 2.5 mΩ on-resistance at 10 V gate drive, 19 nC total gate charge, PQFN 5×6 mm footprint with bottom-side thermal pad, and suitability for high-efficiency DC-DC conversion in space-constrained power stages.

Technical Context

This device operates as a low-side synchronous rectifier in fixed-frequency or adaptive-frequency buck regulators. Its 30 V VDS rating supports 12 V and 24 V input rails, while the 2.5 mΩ RDS(on) minimizes conduction loss at 20–50 A load currents. The 19 nC Qg enables fast switching with moderate gate drive strength.

Thermal design leverages the PQFN's exposed bottom thermal pad and 1.7 °C/W RθJC(Bottom), allowing direct copper pour attachment to PCB ground planes. Body diode parameters-VSD = 1.0 V (max), trr = 16–24 ns, Qrr = 35–53 nC-support efficient reverse recovery during dead-time transitions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Supports 12 V/24 V input bus with margin for voltage spikes in buck topologies
RDS(on) @ VGS = 10 V2.5 mΩ (typ) - Enables <100 mW conduction loss at 20 A continuous drain current
Qg19 nC (typ) - Allows clean turn-on with ≤1 A peak gate driver without excessive switching loss
ID @ TC(Bottom) = 25°C50 A - Sustains high output current in compact 5×6 mm footprint with proper PCB copper
RθJC(Bottom)1.7 °C/W (max) - Permits >40 W power dissipation with 70°C temperature rise to PCB
VGS(th)1.35–2.35 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers
trr16–24 ns - Limits reverse recovery energy and EMI during synchronous rectification

Pinout & Package

PQFN 5×6 mm Outline "E" package with exposed bottom thermal pad and three surface-mount terminals: Drain (D), Source (S), and Gate (G). Thermal pad must be soldered to PCB copper for rated current and thermal performance.

Pin/TerminalCircuit RoleDesign Meaning
D (Drain)High-side connection point to input railInternally connected to die backside; requires low-inductance routing to minimize switching overshoot
S (Source)Low-side connection to output node and return pathCommon reference for gate drive and output sensing; tied directly to power ground plane
G (Gate)Control terminal for channel modulationHigh-impedance input requiring controlled slew rate to suppress ringing; routed away from noisy power traces

Key Features

FeatureDesign Value
Ultra-low RθJC(Bottom)1.7 °C/W max - Enables direct thermal coupling to PCB, eliminating need for heatsinks in 30–50 W applications
Low-profile package1.2 mm max height - Fits under 1.5 mm board-to-board connectors and in thin server VRMs
Industry-standard pinoutThree-terminal D-S-G layout - Compatible with layout footprints of competing 30 V PQFN MOSFETs (e.g., SiR872DP, CSD18540Q5B)
RoHS & halogen-freeNo lead, bromide, or halogen - Meets IPC-1752A Class 2 material declaration requirements for consumer and industrial end equipment
MSL1 qualificationUnlimited floor life at ≤30°C/60% RH - Eliminates bake requirements prior to reflow assembly

Applications

Server Voltage Regulator ModulesTelecom Point-of-Load Converters

Use Scenario: 48 V to 12 V intermediate bus conversion feeding CPU/GPU VRMs in 1U rack servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck stage operating at 500 kHz–1 MHz.

Use Value: 2.5 mΩ RDS(on) reduces conduction loss by ≥15% versus 3.6 mΩ alternatives, improving full-load efficiency by 0.4–0.6%.

Use Scenario: 12 V to 3.3 V/1.8 V conversion for FPGA I/O banks and SerDes supplies in 5G baseband units.

IC Role / Device Role / Timing Role: Secondary-side switch in high-density POL modules with 300–600 kHz switching frequency.

Use Value: 19 nC Qg and 16–24 ns trr enable clean zero-voltage switching transitions, reducing EMI filter size by 30%.

Industrial Motor Drive Gate DriversAutomotive ADAS Power Supplies

Use Scenario: Auxiliary 12 V supply for isolated gate driver ICs in 3-phase inverter stacks.

IC Role / Device Role / Timing Role: High-efficiency buck converter delivering 2 A at 5 V for ISO78xx series isolators and UCCx family gate drivers.

Use Value: PQFN 5×6 mm footprint allows integration into tight gate-driver PCB layouts without compromising thermal headroom.

Use Scenario: Powering radar sensor SoCs and camera ISPs in front-end ADAS ECUs with strict EMC limits.

IC Role / Device Role / Timing Role: Primary synchronous rectifier in 12 V input buck regulator running at 2 MHz for low-noise analog supply rails.

Use Value: 1.2 mm profile avoids interference with stacked camera modules; MSL1 rating ensures reliability across automotive reflow profiles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SiR872DP-T1-GE3RDS(on) = 2.7 mΩ @ 10 V; Qg = 21 nC; same PQFN 5×6 mmSlightly higher conduction loss; identical thermal pad layoutSelect when dual-source qualification is required and 0.2 mΩ RDS(on) tolerance is acceptable
CSD18540Q5BRDS(on) = 2.9 mΩ @ 10 V; Qg = 17 nC; same footprint but different marking orientationLower gate charge improves switching speed; marginally higher on-resistancePrefer for designs prioritizing gate drive simplicity over minimal conduction loss

Compared with SiR872DP-T1-GE3 and CSD18540Q5B, IRFH8318TRPBF offers the lowest RDS(on) in this 30 V PQFN class, making it optimal for thermally constrained, high-current buck stages where conduction loss dominates efficiency calculations.

Availability

IRFH8318TRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drive auxiliary supplies requiring stable component supply and long-term production continuity.

Supply support for IRFH8318TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This part belongs to Infineon's OptiMOS™ 5 family of low-voltage power MOSFETs, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFH8318TRPBF supports 120 A continuous drain current when the bottom-case temperature is maintained at 25°C, but derates to 50 A at TC(Bottom) = 100°C per the datasheet's absolute maximum ratings table. This reflects thermal limitation of the internal bond wires and package structure-not silicon capability-and assumes full thermal pad soldering to ≥1 in² 2-oz copper.

Does this MOSFET require a negative gate voltage for safe operation?

No. The IRFH8318TRPBF has a ±20 V VGS rating and operates reliably with 0 V to +10 V gate drive. Negative gate bias is not required for turn-off; however, applying –5 V during off-state can reduce Miller-induced false turn-on in high-dV/dt environments such as multi-phase interleaved converters.

Can it be used in avalanche-rated applications?

Yes-its single-pulse avalanche energy EAS is rated at 160 mJ at TJ = 25°C (ID = 20 A). This supports limited unclamped inductive switching events, such as those occurring during startup or fault conditions in buck converters. Continuous avalanche operation is not recommended due to uncontrolled junction temperature rise.

Is the PQFN 5×6 mm package compatible with standard reflow profiles?

Yes-the IRFH8318TRPBF is qualified to MSL1 per J-STD-020, meaning it may be stored indefinitely at ≤30°C/60% RH and processed using standard lead-free reflow profiles (peak 260°C, 20–40 sec above 217°C) without preconditioning or baking, provided moisture barrier bags remain sealed until use.

IRFH8318TRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
27A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3180 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
3.6W (Ta), 59W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PQFN (5x6)

IRFH8318TRPBF FAQ

1.How can I place an order for IRFH8318TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH8318TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH8318TRPBF reliable?

The price and inventory of IRFH8318TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH8318TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH8318TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH8318TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH8318TRPBF?

IRFH8318TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH8318TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH8318TRPBF?

For technical support, including IRFH8318TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH8318TRPBF requirements.

6.How does Aetrix verify that IRFH8318TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH8318TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH8318TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH8318TRPBF?

All IRFH8318TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH8318TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH8318TRPBF part is unused and in its original packaging.

Return procedure for IRFH8318TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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