Infineon Technologies IRFHM792TR2PBF

Overview

IRFHM792TR2PBF from Infineon Technologies is a 100 V, 3.4 A N-channel dual-PQFN HEXFET Power MOSFET with 164 mΩ typical R_DS(on) at V_GS = 10 V, 12 °C/W junction-to-case (bottom) thermal resistance, and 4.2 nC typical gate charge - designed for high-efficiency DC-DC primary switching and 48 V battery monitoring circuits.

For engineers reviewing the IRFHM792TR2PBF datasheet, IRFHM792TR2PBF pinout, IRFHM792TR2PBF application, or IRFHM792TR2PBF equivalent, key selection criteria include low-profile PQFN thermal performance, dual-drain configuration for current sharing, and validated avalanche energy rating of 10.2 mJ at I_AS = 2.9 A.

Technical Context

This device integrates two independent N-channel enhancement-mode MOSFETs in a single 3.3 × 3.3 mm PQFN package with bottom-side thermal pad. Its gate threshold voltage (2.0–4.0 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its 100 V BVDSS rating supports operation across 48 V automotive and industrial bus systems.

The dual-drain layout provides symmetrical current paths with shared source and gate terminals per channel, reducing PCB routing complexity in synchronous buck or half-bridge topologies. Thermal design leverages direct bottom-side conduction to PCB copper, achieving 12 °C/W R_θJC(bottom) without external heatsink.

Key Specifications

Pinout & Package

PQFN Dual 3.3 × 3.3 mm package with exposed thermal pad on bottom side and 8-pin top-side terminal layout (dual-channel configuration). Pin 1–4 and 5–8 are mirror-symmetric for parallel channel use.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPD70N04S4-04, IRFHM792TR2PBF provides essential 100 V rating for 48 V systems; versus SIZ202DT-T1-GE3, it delivers 10 mΩ lower R_DS(on) and 1.2 nC less Q_g, yielding measurable thermal and switching loss reduction.

Availability

IRFHM792TR2PBF is available at Aetrix Electronics and suitable for 48 V battery monitoring, DC-DC primary switching, and industrial motor drive applications requiring stable component supply and long-term lifecycle support.

Supply support for IRFHM792TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered for high-power-density switching in automotive 48 V architectures and industrial SMPS where thermal performance and reliability are critical.

FAQ

What is the maximum continuous drain current for IRFHM792TR2PBF at 70°C ambient?

The datasheet specifies 1.8 A continuous drain current at T_A = 70°C with V_GS = 10 V. This derating reflects thermal limits of the PQFN package when relying solely on ambient convection - not PCB conduction. For higher current, use bottom-side thermal pad soldering to achieve 3.4 A at T_C(bottom) = 25°C.

Does IRFHM792TR2PBF have integrated ESD protection on the gate?

No. The device does not include on-chip gate ESD protection diodes. External 10 kΩ series gate resistor and 12 V Zener clamp between gate and source are recommended to prevent damage from human-body-model (HBM) discharges exceeding ±20 V, as specified in the absolute maximum ratings.

Can IRFHM792TR2PBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Fig 4) ensures inherent current sharing when paralleled. However, matched gate drive routing and identical PCB copper area per device are required to avoid imbalance. The dual-channel layout also supports internal channel paralleling within one package.

What is the safe operating area (SOA) limitation at 100 μs pulse width?

At 100 μs, the SOA curve (Fig 8) limits operation to ≤10 A at 50 V or ≤5 A at 100 V. This is governed by peak junction temperature rise, not wirebond fusing. Exceeding these boundaries risks thermal runaway due to localized heating in the silicon die.