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Infineon Technologies IRFHM792TRPBF
- Part No.:
- IRFHM792TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
IRFHM792TRPBF.pdf
- Description:
- MOSFET 2N-CH 100V 2.3A 8PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,241
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Product details
Overview
IRFHM792TRPBF from Infineon Technologies is a 100 V, 3.4 A N-channel dual PQFN HEXFET Power MOSFET with 164 mΩ typical RDS(on) at VGS = 10 V, 12 °C/W junction-to-case (bottom) thermal resistance, and 4.2 nC typical gate charge - optimized for DC-DC primary switching and 48 V battery monitoring circuits.
For engineers reviewing the IRFHM792TRPBF datasheet, IRFHM792TRPBF pinout, IRFHM792TRPBF application, or IRFHM792TRPBF equivalent, key selection criteria include low-profile thermal performance (1.2 mm height), industry-standard dual-source-compatible pinout, and validated unclamped inductive avalanche capability up to 10.2 mJ at IAS = 2.9 A.
Technical Context
This dual-die PQFN MOSFET integrates two identical N-channel enhancement-mode transistors in a single 3.3 × 3.3 mm footprint with shared source terminals and independent gate/drain connections. Its low RDS(on) and 12 °C/W RθJC(bottom) enable high-efficiency power conversion in space-constrained 48 V systems.
The device features a body diode with 15–23 ns reverse recovery time and 45–68 nC Qrr, supporting synchronous rectification and fast-switching topologies. Gate threshold voltage is tightly specified (2.0–4.0 V), and temperature coefficient of VGS(th) is -8.2 mV/°C - critical for stable biasing across automotive-grade temperature ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Max | 100 V - supports 48 V bus designs with ≥2× voltage margin against transients |
| RDS(on) Typ @ 10 V | 164 mΩ - enables <1.1 W conduction loss at 3.4 A continuous drain current |
| Qg Typ | 4.2 nC - reduces gate drive power and allows use with low-current drivers (e.g., integrated PWM controllers) |
| RθJC (Bottom) | 12 °C/W - permits direct thermal coupling to PCB copper, eliminating need for external heatsinks in ≤2 W dissipation |
| ID @ TC(Bottom) = 25°C | 3.4 A - rated for continuous operation when case (bottom) is maintained at 25°C via thermal pad |
| EAS Single Pulse | 10.2 mJ - withstands unclamped inductive energy in DC-DC primary switch failure events |
| VGS(th) Range | 2.0–4.0 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers |
Pinout & Package
PQFN Dual 3.3 × 3.3 mm package with exposed thermal pad on bottom side; 8-pin layout (dual-channel configuration) with common source terminals and isolated gate/drain paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2 | Gate 1 / Gate 2 | Independent control inputs for each MOSFET channel; require separate gate resistors for optimal switching balance |
| 3, 4, 7, 8 | Drain 1 / Drain 2 | High-side switching nodes; pins 3/4 serve Channel 1, pins 7/8 serve Channel 2 - paralleled internally per channel |
| 5, 6 | Source 1 / Source 2 | Common-source configuration; pins 5 and 6 are electrically tied - used for Kelvin sensing or split-source routing |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 164 mΩ typ @ 10 V - cuts conduction losses by >30% vs. comparable 5×6 mm SO-8 MOSFETs in same voltage class |
| Thermal Resistance (RθJC) | 12 °C/W (bottom) - enables >2× higher power density than QFN packages without thermal vias |
| Low Profile | 1.2 mm max height - fits under 1.5 mm board-to-board connectors in compact server VRMs and telecom modules |
| Industry-Standard Pinout | Compatible with IRFHM792TR2PBF and competing dual-PQFN footprints - avoids PCB redesign during second-sourcing |
| MSL1 Rating | Moisture Sensitivity Level 1 - eliminates bake requirements before reflow, reducing manufacturing cost and risk |
Applications
| 48 V Telecom DC-DC Primary Switch | Automotive 48 V Battery Monitor |
|---|---|
Use Scenario: High-frequency buck converter in 48 V intermediate bus architecture powering baseband processors and FPGAs. IC Role / Device Role / Timing Role: Primary-side synchronous switch operating at 300–500 kHz with forced CCM mode. Use Value: 164 mΩ RDS(on) and 4.2 nC Qg reduce total switching + conduction loss to <1.3 W at 3.4 A, enabling 95%+ efficiency at full load. | Use Scenario: Bidirectional current sensing and isolation in 48 V mild-hybrid vehicle battery management systems. IC Role / Device Role / Timing Role: High-side switch controlling charging/discharging path between starter-generator and Li-ion pack. Use Value: 100 V VDS rating and 10.2 mJ EAS ensure robustness against load dump transients up to ±80 V. |
| Industrial PoE++ PSE Controller | Server VRM High-Density Phase Leg |
Use Scenario: Power Sourcing Equipment delivering up to 90 W over Category 6A cabling with fault protection. IC Role / Device Role / Timing Role: Class 8 PSE switch implementing IEEE 802.3bt detection, classification, and inrush limiting. Use Value: MSL1 qualification and 12 °C/W RθJC support reflow-only assembly and sustained 3.4 A operation without derating in sealed enclosures. | Use Scenario: Multiphase buck converter supplying core voltage to AI accelerators with >600 A peak demand. IC Role / Device Role / Timing Role: One half of a dual-phase leg (two IRFHM792TRPBF per phase) in interleaved topology. Use Value: Dual-die integration in 3.3 × 3.3 mm saves 42% board area vs. discrete SO-8 solutions while maintaining matched RDS(on) and Qg for current sharing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel dual-power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH7926TRPBF | Same 100 V/3.4 A rating but 140 mΩ RDS(on) and 5.1 nC Qg; single-die, not dual | Lacks integrated dual-channel topology - requires two devices and extra layout area for identical functionality | Select when lower RDS(on) outweighs space savings and thermal coupling benefits of dual-die packaging |
| SiR872DP-T1-GE3 | 100 V/4.8 A, 135 mΩ RDS(on), 6.8 nC Qg; 5×6 mm PowerPAK SO-8, not PQFN | Higher profile (1.6 mm) and larger footprint - incompatible with ultra-thin 48 V modules requiring <1.3 mm height | Select when higher current headroom and legacy SO-8 compatibility are prioritized over board area and thermal performance |
Compared with IRFH7926TRPBF and SiR872DP-T1-GE3, IRFHM792TRPBF uniquely delivers dual-channel integration, 1.2 mm profile, and 12 °C/W thermal resistance - making it the only option that simultaneously satisfies space, thermal, and functional integration requirements in next-gen 48 V DC-DC modules.
Availability
IRFHM792TRPBF is available at Aetrix Electronics and suitable for 48 V telecom DC-DC converters, automotive battery monitors, industrial PoE++ PSE controllers, and server VRM phase legs requiring stable component supply and long-term lifecycle assurance.
Supply support for IRFHM792TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors - with >30 years of MOSFET innovation and ISO/TS 16949-certified manufacturing.
This device belongs to Infineon's HEXFET® PQFN dual-channel power MOSFET product line, engineered specifically for high-density, thermally constrained 48 V power conversion in datacom, automotive, and industrial applications.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
At TC(Bottom) = 100°C, the maximum continuous drain current is 1.8 A per channel (3.6 A total), as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN package's bottom-side thermal path and must be verified using measured PCB copper area and via count in the target layout.
Does IRFHM792TRPBF support gate drive from 3.3 V logic?
No - its gate threshold voltage range is 2.0–4.0 V, and RDS(on) is only guaranteed at VGS = 10 V. Driving with 3.3 V results in incomplete turn-on and excessive conduction loss (>5× increase). A dedicated gate driver with ≥8 V output (e.g., IRS2007) is required for full performance.
How is the dual-channel configuration wired internally?
The device contains two fully independent N-channel MOSFETs sharing only the source terminal connection (pins 5 and 6). Drains are separated (pins 3/4 for Channel 1, pins 7/8 for Channel 2), and gates are isolated (pins 1 and 2). No internal cross-coupling exists - each channel operates as a discrete switch.
Is the exposed thermal pad electrically connected to any terminal?
Yes - the exposed thermal pad on the bottom of the PQFN package is internally connected to the source terminals (pins 5 and 6). It must be soldered to a large PCB copper pour tied to the system ground plane to achieve the specified 12 °C/W RθJC and prevent thermal runaway.
IRFHM792TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 100V
- Current - Continuous Drain (Id) @ 25°C:
- 2.3A
- Rds On (Max) @ Id, Vgs:
- 195mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 251pF @ 25V
- Power - Max:
- 2.3W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PQFN (3.3x3.3), Power33
IRFHM792TRPBF FAQ
1.How can I place an order for IRFHM792TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFHM792TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFHM792TRPBF reliable?
The price and inventory of IRFHM792TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM792TRPBF is usually 5 days.
3.What payment methods are accepted for IRFHM792TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM792TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFHM792TRPBF?
IRFHM792TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFHM792TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFHM792TRPBF?
For technical support, including IRFHM792TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM792TRPBF requirements.
6.How does Aetrix verify that IRFHM792TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFHM792TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM792TRPBF meets industry standards.
7.What is the process for return or replacement of IRFHM792TRPBF?
All IRFHM792TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM792TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFHM792TRPBF part is unused and in its original packaging.
Return procedure for IRFHM792TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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