Infineon Technologies IRFHS9351TR2PBF

Overview

IRFHS9351TR2PBF from Infineon Technologies is a dual P-channel enhancement-mode HEXFET^® Power MOSFET in a 2 mm × 2 mm PQFN package, rated for -30 V V_DS, 170 mΩ R_DS(on) at V_GS = -10 V, and -3.4 A continuous drain current at T_C = 25°C. It serves as a compact, low-profile load switch in battery-powered portable electronics requiring bidirectional control and integrated body diode functionality.

For engineers reviewing the IRFHS9351TR2PBF datasheet, IRFHS9351TR2PBF pinout, IRFHS9351TR2PBF application, or IRFHS9351TR2PBF equivalent, key selection criteria include verified dual-FET topology, PQFN thermal resistance (R_θJC ≤ 19°C/W), gate charge (Q_g = 3.7 nC), reverse recovery charge (Q_rr = 42–63 nC), and MSL1 industrial qualification.

Technical Context

This device integrates two independent P-channel MOSFETs in a single 6-pin PQFN package with shared thermal pad. Each FET features a fully characterized body diode (V_SD = -1.2 V at I_S = -3.1 A) and exhibits tight threshold voltage distribution (V_GS(th) = -1.3 to -2.4 V) with negative temperature coefficient (-4.6 mV/°C).

Its switching performance is defined by low total gate charge (3.7 nC @ V_DS = -15 V, V_GS = -4.5 V, I_D = -3.1 A), fast turn-off delay (t_d(off) = 6.3 ns), and low output capacitance (C_oss = 39 pF), enabling efficient operation in high-frequency battery charge/discharge control up to several hundred kHz.

Key Specifications

Pinout & Package

IRFHS9351TR2PBF uses a 6-pin PQFN (Power Quad Flat No-lead) package with bottom thermal pad. Pin numbering follows top-view orientation: D1, G1, S1, S2, G2, D2 - forming two independent source-grounded P-channel switches sharing no internal connection beyond substrate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel load switch applications.

Compared with Si7157DP-T1-GE3 and DMC3025LSD-13, IRFHS9351TR2PBF uniquely balances dual-channel integration, 170 mΩ R_DS(on), 3.7 nC Q_g, and 19°C/W R_θJC in a 2 mm × 2 mm footprint-making it optimal for space-constrained, thermally demanding battery management systems where board area and thermal performance are co-critical.

Availability

IRFHS9351TR2PBF is available at Aetrix Electronics and suitable for battery charge/discharge switching, USB-C power path control, redundant OR-ing, and industrial sensor node power management requiring stable component supply and long-term production continuity.

Supply support for IRFHS9351TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET^® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion and battery protection circuits in portable and industrial applications.

FAQ

What is the maximum continuous drain current per channel at 70°C case temperature?

The IRFHS9351TR2PBF supports -2.3 A continuous drain current per channel at T_C = 70°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the 19°C/W junction-to-case resistance and package power dissipation capability under real-world PCB copper area constraints.

Can the two FETs be paralleled for higher current handling?

Yes-both FETs share identical electrical characteristics (R_DS(on), V_GS(th), Q_g) and thermal coupling via the common PQFN thermal pad, enabling safe parallel operation. When paralleled with matched gate drive, total current capacity increases to -6.8 A at T_C = 25°C with balanced current sharing within ±5% under typical layout conditions.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes-the body diode has a typical forward voltage of -1.2 V at -3.1 A and reverse recovery time of 20–30 ns, with Q_rr of 42–63 nC. These parameters support use in low-duty-cycle, high-frequency buck topologies up to 1 MHz, though external Schottky diodes may be preferred for sub-500 kHz designs requiring lowest conduction loss.

Does this part require a negative gate drive voltage relative to source?

Yes-being a P-channel MOSFET, IRFHS9351TR2PBF turns on when V_GS is negative relative to its source terminal. Full enhancement occurs at V_GS = -10 V, with guaranteed turn-on down to V_GS = -4.5 V (R_DS(on) ≤ 290 mΩ). Gate drive must reference each FET's respective source (S1 or S2), not ground.