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Infineon Technologies IRFHS9351TRPBF
- Part No.:
- IRFHS9351TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 6-PowerVDFN
- Datasheet:
-
IRFHS9351TRPBF.pdf
- Description:
- MOSFET 2P-CH 30V 2.3A PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:12,698
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Product details
Overview
IRFHS9351TRPBF from Infineon Technologies is a dual P-channel 30 V HEXFET® Power MOSFET in a 2 mm × 2 mm PQFN package, featuring RDS(on) ≤ 170 mΩ at VGS = −10 V, continuous drain current of −3.4 A at TC = 25°C, and low thermal resistance (RθJC ≤ 19°C/W). It serves as a compact, high-efficiency load switch for battery charge/discharge control in space-constrained portable electronics.
For engineers reviewing the IRFHS9351TRPBF datasheet, IRFHS9351TRPBF pinout, IRFHS9351TRPBF application, or IRFHS9351TRPBF equivalent, key selection criteria include verified dual-channel P-channel topology, PQFN-6 package thermal performance, body diode reverse recovery time (trr = 20–30 ns), gate charge (Qg = 3.7 nC), and industrial-grade MSL1 qualification.
Technical Context
This dual P-channel MOSFET integrates two independent FETs (FET1 and FET2) in a single 6-pin PQFN package with shared thermal pad. Each channel supports −30 V VDS, −10 V gate drive, and exhibits matched threshold voltage (VGS(th) = −1.3 to −2.4 V) and on-resistance behavior across temperature.
The device uses trench-gate HEXFET technology optimized for low RDS(on) and fast switching (tr = 30 ns, tf = 7.9 ns), with integrated body diodes rated for −5.1 A continuous source current and 42–63 nC reverse recovery charge under defined di/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V - Maximum blocking voltage for battery-side load switching up to 12 V systems with margin. |
| RDS(on) max | 170 mΩ @ VGS = −10 V - Enables ≤540 mW conduction loss at −3.4 A, critical for thermally constrained PCB layouts. |
| ID cont @ TC = 25°C | −3.4 A - Sustained current per channel without derating when mounted on ≥1 in² copper area. |
| Qg | 3.7 nC @ VDS = −15 V - Low gate charge reduces driver power demand and enables efficient 1 MHz-class switching in DC-DC or load-switching topologies. |
| trr | 20–30 ns - Fast body diode recovery minimizes shoot-through risk and EMI in bidirectional battery path designs. |
| RθJC | ≤19°C/W - Enables direct thermal coupling to PCB ground plane, supporting >1.5 W dissipation in compact 2×2 mm footprint. |
Pinout & Package
IRFHS9351TRPBF is housed in a 6-lead PQFN (Power Quad Flat No-lead) package measuring 2 mm × 2 mm × 0.95 mm, with exposed thermal pad on bottom for enhanced heat transfer. Pin numbering follows top-view orientation: D1–G1–S1–S2–G2–D2 (pins 1–6).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of FET1 | High-side connection point for first channel; electrically isolated from D2 but shares thermal pad. |
| G1 | Gate of FET1 | Control input for FET1; requires negative gate drive relative to source (S1) to turn on. |
| S1 | Source of FET1 | Reference node for FET1; tied to system ground or battery return in high-side switch configuration. |
| S2 | Source of FET2 | Independent reference node for FET2; enables dual independent load switching or complementary half-bridge operation. |
| G2 | Gate of FET2 | Independent control input for FET2; decoupled from G1 to support asynchronous switching. |
| D2 | Drain of FET2 | Second high-side output; allows concurrent or staggered control of two battery paths or loads. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent P-channel FETs | Enables two separate load switches or synchronous rectifier pairs in one 2×2 mm footprint, reducing board area by >40% vs. discrete solutions. |
| Low RDS(on) (170 mΩ max) | Minimizes I²R losses in portable battery management, extending runtime and reducing thermal stress on adjacent components. |
| MSL1 industrial qualification | Guarantees robust reflow compatibility and long-term reliability in automated SMT assembly without moisture sensitivity concerns. |
| Low-profile PQFN (≤0.95 mm) | Supports ultra-thin end equipment such as wearables and hearing aids where Z-height is constrained to <1.2 mm. |
Applications
| Battery Charge Switch | USB-C Power Path Control |
|---|---|
Use Scenario: Bidirectional power routing between USB-C port and Li-ion battery during charging and discharging cycles. IC Role / Device Role / Timing Role: Dual-channel P-MOSFET acts as back-to-back load switch controlling direction and isolation of power flow. Use Value: Leverages matched RDS(on) and fast trr to minimize voltage drop and reverse recovery loss during mode transitions. | Use Scenario: Enabling/disabling power delivery from USB-C PD source to system rails while preventing backfeed. IC Role / Device Role / Timing Role: High-side P-channel switch isolating downstream circuitry during fault or standby conditions. Use Value: Uses low Qg (3.7 nC) and −10 V gate drive compatibility to interface directly with standard USB-C controller GPIOs. |
| Portable Medical Sensor Power Gating | Smartwatch Battery Protection Circuit |
Use Scenario: Selectively powering sensor subsystems (ECG, SpO₂) only during active measurement to conserve battery life. IC Role / Device Role / Timing Role: Low-leakage P-channel switch enabling sub-μA off-state current and rapid on/off cycling. Use Value: Achieves IDSS ≤ −150 nA at VDS = −24 V, ensuring <1 μA total quiescent draw per channel in sleep mode. | Use Scenario: Overvoltage/overcurrent protection block between battery and PMIC, including reverse polarity and short-circuit isolation. IC Role / Device Role / Timing Role: Dual-FET configuration implements redundant overcurrent sensing and fast shutdown via gate-controlled cutoff. Use Value: Supports pulsed drain current (IDM = −5.1 A) and robust SOA up to 100 μs, enabling reliable fault response without external crowbar. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI7851DP-T1-GE3 | RDS(on) = 190 mΩ @ −10 V; larger 3×3 mm SO-8 package; higher Qg (5.5 nC) | Less suitable for ultra-compact wearables due to 2.25× larger footprint and higher gate drive demand | Prefer when board space permits and higher surge current rating (−6.5 A) is required |
| DMN3026LSD-13 | Single-channel P-MOSFET; RDS(on) = 160 mΩ @ −10 V; 2×2 mm TSOP-6 package; no dual integration | Requires two devices and additional layout area to replicate dual functionality | Select only if design mandates separate control timing or failsafe redundancy between channels |
Compared with SI7851DP-T1-GE3 and DMN3026LSD-13, IRFHS9351TRPBF uniquely delivers dual-channel integration, lowest thermal resistance (19°C/W), and smallest 2×2 mm footprint-making it optimal for space- and thermal-limited battery-powered systems requiring coordinated load switching.
Availability
IRFHS9351TRPBF is available at Aetrix Electronics and suitable for battery charge/discharge switching, USB-C power path control, portable medical sensor gating, and smartwatch battery protection requiring stable component supply and consistent PQFN-6 sourcing.
Supply support for IRFHS9351TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.
The IRFHS9351TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-density, low-voltage battery management and portable power switching applications demanding minimal footprint and thermal overhead.
FAQ
What is the maximum continuous drain current per channel at 70°C case temperature?
The IRFHS9351TRPBF supports −2.3 A continuous drain current per channel at TC = 70°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN package and must be validated against actual PCB copper area and ambient airflow in the target application.
Does this device include an integrated body diode, and what are its key parameters?
Yes, each P-channel FET includes an integral reverse p–n junction body diode. Key parameters include −5.1 A continuous source current (IS), 20–30 ns reverse recovery time (trr), and 42–63 nC reverse recovery charge (Qrr) measured at TJ = 25°C with di/dt = 370 A/μs.
Can IRFHS9351TRPBF be used in a synchronous rectifier configuration?
No - IRFHS9351TRPBF is a dual P-channel MOSFET intended for high-side load switching, not synchronous rectification. Its gate threshold (−1.3 to −2.4 V) and lack of dedicated gate driver interface make it unsuitable for self-driven synchronous buck topologies requiring precise timing and low-VGS turn-on.
What is the gate-to-source voltage range, and is ±20 V absolute maximum rating symmetric?
The gate-to-source voltage range is −20 V to +20 V, with symmetrical absolute maximum rating. However, only negative VGS turns on the P-channel devices; positive gate bias is permitted only for safe handling and ESD protection, not functional operation.
IRFHS9351TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 6-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 2.3A
- Rds On (Max) @ Id, Vgs:
- 170mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 160pF @ 25V
- Power - Max:
- 1.4W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-PQFN Dual (2x2)
IRFHS9351TRPBF FAQ
1.How can I place an order for IRFHS9351TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFHS9351TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFHS9351TRPBF reliable?
The price and inventory of IRFHS9351TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHS9351TRPBF is usually 5 days.
3.What payment methods are accepted for IRFHS9351TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHS9351TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFHS9351TRPBF?
IRFHS9351TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFHS9351TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFHS9351TRPBF?
For technical support, including IRFHS9351TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHS9351TRPBF requirements.
6.How does Aetrix verify that IRFHS9351TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFHS9351TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHS9351TRPBF meets industry standards.
7.What is the process for return or replacement of IRFHS9351TRPBF?
All IRFHS9351TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHS9351TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFHS9351TRPBF part is unused and in its original packaging.
Return procedure for IRFHS9351TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFHS9351TRPBF Tags
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2N7002DWH6327XTSA1
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2N7002BKS,115
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