Infineon Technologies IRFI4019H-117P

Overview

IRFI4019H-117P from Infineon Technologies (formerly International Rectifier) is a dual N-channel MOSFET half-bridge in a TO-220 Full-Pak 5-pin package, designed for Class-D audio amplifiers. It delivers up to 200W per channel into 8Ω, features 80 mΩ R_DS(on) @ 10V, 13 nC total gate charge, and optimized body-diode Q_rr of 140–210 nC for low THD and EMI.

For engineers reviewing the IRFI4019H-117P datasheet, IRFI4019H-117P pinout, IRFI4019H-117P application in Class-D audio stages, or IRFI4019H-117P equivalent half-bridge MOSFETs, key selection criteria include R_DS(on), Q_g/Q_sw, Q_rr, thermal resistance (R_θJC = 6.9°C/W), and integrated half-bridge layout compatibility.

Technical Context

This device integrates two matched N-channel enhancement-mode MOSFETs in a single half-bridge topology with shared source connection and isolated gate terminals. Its internal gate resistance (2.5 Ω typ.) and low output capacitance (C_oss = 100 pF, C_rss = 15 pF) enable fast, controlled switching at high frequencies typical of Class-D modulation.

The optimized body diode exhibits 57–86 ns reverse recovery time and 140–210 nC Q_rr, directly reducing cross-conduction losses and voltage spikes during dead-time transitions-critical for maintaining >90% efficiency and <0.01% THD in high-fidelity audio output stages.

Key Specifications

Pinout & Package

IRFI4019H-117P uses a TO-220 Full-Pak 5-pin package with insulated case and lead-form option 117. The package provides low thermal resistance (R_θJC = 6.9°C/W) and mechanical robustness for high-current audio output stages.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge MOSFET applications.

Compared with STW48N60M2 and IXFH30N60P, IRFI4019H-117P uniquely combines half-bridge integration, audio-optimized Q_rr, and 150 V rating-enabling smaller PCB area, lower THD, and simplified thermal design specifically for consumer and pro-audio amplifiers.

Availability

IRFI4019H-117P is available at Aetrix Electronics and suitable for home audio amplifiers, professional PA systems, automotive infotainment units, and active subwoofers requiring stable component supply and consistent parametric performance across production batches.

Supply support for IRFI4019H-117P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor solutions, and automotive ICs with ISO/TS 16949-certified manufacturing.

The IRFI4019H-117P belongs to Infineon's HEXFET® Audio Power MOSFET product line, engineered specifically for high-efficiency, low-distortion Class-D audio output stages where thermal stability, switching fidelity, and integrated layout are critical.

FAQ

What is the maximum continuous output power per channel this device supports?

IRFI4019H-117P supports up to 200W per channel into an 8Ω load in half-bridge configuration at T_C = 100°C, based on its 150 V V_DS, 80 mΩ R_DS(on), and 6.9°C/W junction-to-case thermal resistance. Derating applies above 100°C case temperature per the linear derating factor of 0.15 W/°C.

Does this part require external gate resistors for stable switching?

No external gate resistors are required in most Class-D designs due to the device's 2.5 Ω typical internal gate resistance, which sufficiently damps ringing and controls dv/dt. However, fine-tuning may be needed for specific gate driver ICs or PCB parasitics-refer to Figures 16a/b and 17a/b in the official datasheet for test conditions.

How does the body diode performance impact THD in audio applications?

The body diode's 140–210 nC Q_rr and 57–86 ns t_rr directly reduce voltage spikes and cross-conduction during dead-time transitions. This minimizes harmonic distortion introduced by diode recovery, enabling THD values below 0.01% at full power-verified in reference designs using 350 kHz carrier frequencies.

Is the TO-220 Full-Pak 5-pin package electrically insulated?

Yes-the TO-220 Full-Pak variant used in IRFI4019H-117P features an electrically insulated case (typically 2.5 kV isolation), eliminating the need for thermal washers or insulating pads when mounted to a heatsink. This simplifies mechanical assembly and improves thermal transfer reliability compared to standard TO-220 packages.