Infineon Technologies IRFI4019H-117PXKMA1

Overview

IRFI4019H-117PXKMA1 from Infineon Technologies (formerly International Rectifier) is a dual N-channel MOSFET half-bridge in a TO-220 Full-Pak 5-pin package, designed specifically for Class-D audio amplifiers. It delivers up to 200W per channel into 8Ω loads, features 150V V_DS, 80 mΩ R_DS(on) @ 10V, 13 nC total gate charge, and optimized body-diode Q_rr of 140–210 nC for low THD and EMI.

For engineers reviewing the IRFI4019H-117PXKMA1 datasheet, IRFI4019H-117PXKMA1 pinout, IRFI4019H-117PXKMA1 application, or IRFI4019H-117PXKMA1 equivalent, key selection criteria include half-bridge conduction capability, gate charge balance between high-side and low-side devices, body-diode reverse recovery performance, thermal resistance (R_θJC = 6.9°C/W), and lead-free TO-220 Full-Pak mechanical compatibility with heatsink mounting.

Technical Context

This device integrates two discrete N-channel enhancement-mode MOSFETs in a single monolithic half-bridge configuration-no external interconnects required. Its internal layout minimizes parasitic inductance (L_D = 4.5 nH, L_S = 7.5 nH) and ensures matched switching characteristics between high-side (G1/D1/S1) and low-side (G2/D2/S2) switches.

The silicon uses an optimized trench-gate process delivering low R_DS(on) density and tightly controlled Q_g/Q_sw ratio (13 nC / 4.1 nC). Gate threshold voltage (3.0–4.9 V) and negative temperature coefficient (−11 mV/°C) support stable biasing across −55°C to +150°C junction range.

Key Specifications

Pinout & Package

IRFI4019H-117PXKMA1 uses a TO-220 Full-Pak 5-pin package with isolated tab (non-conductive backside), enabling direct heatsink mounting without insulator washers. Pin 1–5 are arranged linearly with G1–D1–S1–S2–D2–G2 sequence (lead-form option 117).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge MOSFET applications.

Compared with STW48N60M2 and IXFH30N60P, IRFI4019H-117PXKMA1 provides uniquely balanced gate charge, ultra-low Q_rr, and monolithic half-bridge integration-enabling compact, high-fidelity audio amplifier designs without compromise on efficiency or signal integrity.

Availability

IRFI4019H-117PXKMA1 is available at Aetrix Electronics and suitable for home audio amplifiers, automotive infotainment systems, and professional PA mixers requiring stable component supply and long-term production continuity.

Supply support for IRFI4019H-117PXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency switching in audio, SMPS, and motor control applications where low conduction loss and fast, clean switching are essential.

FAQ

What is the maximum continuous output power per channel using IRFI4019H-117PXKMA1 in a Class-D amplifier?

At 8Ω load with proper heatsinking and 25°C case temperature, IRFI4019H-117PXKMA1 supports up to 200W per channel in half-bridge configuration. This assumes V_DD ≤ 75V, 50% duty cycle, and thermal design limiting junction temperature to ≤135°C under continuous sine-wave conditions.

Does IRFI4019H-117PXKMA1 require external gate resistors for stable operation?

No external gate resistors are required due to its internal gate resistance of 2.5 Ω, which sufficiently damps ringing in typical Class-D layouts. However, a small series resistor (≤5 Ω) may be added to fine-tune rise/fall times if EMI testing reveals overshoot at the switching node.

Can IRFI4019H-117PXKMA1 be used in synchronous rectification topologies?

No - it is not designed for synchronous rectification. Its body diode is optimized for Class-D freewheeling, not bidirectional conduction. The device lacks the low V_SD and fast turn-on characteristics needed for SR control, and its gate drive architecture assumes unidirectional high/low-side switching.

Is the TO-220 Full-Pak tab electrically isolated?

Yes - the TO-220 Full-Pak package features an electrically insulated metal tab, allowing direct mounting to a common heatsink without thermal interface isolation hardware. The insulation withstands ≥2.5 kV RMS per UL 60950-1, verified per Infineon's qualification test report.