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Infineon Technologies IRFI4019HG-117P

Part No.:
IRFI4019HG-117P
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
TO-220-5 Full Pack, Formed Leads
Datasheet:
AetrixIRFI4019HG-117P.pdf
Description:
MOSFET 2N-CH 150V 8.7A TO220-5
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,655

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Product details

Overview

IRFI4019HG-117P from Infineon Technologies is a discrete power MOSFET half-bridge module in TO-220 Full-Pak 5-pin package, integrating high-side and low-side N-channel switches for Class-D audio amplifiers. It delivers up to 200W per channel into 8Ω load, features 80 mΩ RDS(on) @ 10V, 13 nC total gate charge, and optimized body-diode Qrr (140–210 nC) to reduce THD and EMI.

For engineers reviewing the IRFI4019HG-117P datasheet, IRFI4019HG-117P pinout, IRFI4019HG-117P application, or IRFI4019HG-117P equivalent, key selection criteria include half-bridge integration, low Qsw (4.1 nC), internal gate resistance (2.5 Ω), thermal resistance RθJC = 6.9 °C/W, and Class-D–specific diode recovery performance.

Technical Context

This device implements a monolithic half-bridge topology with isolated source terminals (S1, S2) and separate gate inputs (G1, G2), enabling independent control of high-side and low-side switches. Its 150 V VDS rating and 150 °C TJ(max) support robust operation in high-power audio output stages.

The integrated design minimizes parasitic inductance (LD = 4.5 nH, LS = 7.5 nH) and leverages optimized gate charge partitioning (Qgs1 = 3.3 nC, Qgd = 3.9 nC) to ensure fast, low-loss switching at typical Class-D frequencies (250–500 kHz).

Key Specifications

Parameter Value and Actual Design Meaning
VDS 150 V - Supports rail voltages up to ±75 V in bridged-tied-load (BTL) Class-D amplifiers.
RDS(on) typ. @ 10 V 80 mΩ - Enables <2 W conduction loss per FET at 5.2 A continuous drain current.
Qg typ. 13 nC - Reduces gate drive power requirement and supports efficient 500 kHz switching.
Qrr typ. 140 nC - Low reverse recovery charge suppresses shoot-through risk and EMI during dead-time transitions.
RθJC 6.9 °C/W - Allows direct heatsink mounting with ≤10.4 W dissipation at ΔT = 72 °C (150 °C TJ − 78 °C TC).
ID @ TC = 25°C 150 A - Peak pulsed capability supports transient 200 W/channel output without thermal runaway.
VGS(th) 3.0–4.9 V - Ensures reliable turn-on with standard 5 V or 10 V gate drivers while avoiding false triggering.

Pinout & Package

IRFI4019HG-117P uses a TO-220 Full-Pak 5-pin package with isolated source leads and dedicated gate/drain connections for half-bridge operation. The metal tab is electrically connected to the high-side drain (D1) and serves as the primary thermal path.

Pin/Terminal Circuit Role Design Meaning
G1 High-side gate input Controls upper switch; referenced to S1 (high-side source), requires level-shifted drive.
G2 Low-side gate input Controls lower switch; referenced to S2 (low-side source), ground-referenced drive compatible.
D1 High-side drain / output node Connected to metal tab; carries full load current and serves as main heat transfer surface.
S1 High-side source / bootstrap return Isolated terminal for high-side source biasing; enables floating gate drive in half-bridge.
S2 Low-side source / power ground Common reference for low-side switch and system ground; separates high/low-side return paths.

Key Features

Feature Design Value
Integrated half-bridge topology Reduces PCB footprint by eliminating discrete layout matching and interconnect inductance between two MOSFETs.
Optimized body-diode Qrr and trr 140–210 nC Qrr, 57–86 ns trr minimize voltage spikes and cross-conduction during dead-time commutation.
Low internal gate resistance (RG(int)) 2.5 Ω limits gate oscillation and dV/dt-induced false turn-on without external damping resistors.
Halogen-free, lead-free package TO-220 Full-Pak meets RoHS 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1).
Enhanced thermal interface Direct metal tab contact provides 6.9 °C/W junction-to-case thermal resistance for stable 150 °C operation.

Applications

Home Audio Amplifiers Automotive Infotainment Systems

Use Scenario: High-efficiency stereo amplifier delivering 2×200W into 8Ω loads in compact AV receivers.

IC Role / Device Role / Timing Role: Half-bridge power stage driving speaker outputs in BTL configuration with PWM carrier frequency ≥350 kHz.

Use Value: 80 mΩ RDS(on) and 4.1 nC Qsw enable >90% efficiency at full power, reducing heatsink size by 35% vs. discrete alternatives.

Use Scenario: 4-channel Class-D amplifier powering front/rear speakers and subwoofer in premium vehicle audio systems.

IC Role / Device Role / Timing Role: Dual half-bridge per channel (two IRFI4019HG-117P per channel) supporting 400 kHz switching with adaptive dead-time control.

Use Value: Low Qrr (140 nC) ensures clean zero-crossing transitions under high di/dt (100 A/µs), suppressing audible switching artifacts.

Professional Sound Equipment Active Studio Monitors

Use Scenario: 1U rack-mount powered mixer with 8-output Class-D amplifier bank for live sound reinforcement.

IC Role / Device Role / Timing Role: Primary output stage handling 150 A peak pulsed current per channel with forced-air cooling.

Use Value: 150 A IDM rating and 34 A pulsed source current (body diode) sustain transient peaks without derating or thermal throttling.

Use Scenario: Bi-amplified near-field monitor with separate Class-D channels for woofer and tweeter.

IC Role / Device Role / Timing Role: Low-noise half-bridge stage operating at 500 kHz to avoid audible beat frequencies with audio band content.

Use Value: 15 pF Crss and 97 pF Cosseff minimize capacitive coupling into feedback paths, preserving >110 dB SNR.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STW56N60M2 600 V VDS, 56 mΩ RDS(on), no integrated half-bridge - requires external pairing and layout matching. Designed for SMPS and motor drives; lacks Class-D–optimized Qrr and gate charge partitioning. Preferred for higher-voltage industrial inverters; not drop-in for audio due to missing S1/S2 isolation and higher Qrr (320 nC).
IXFH30N60P 600 V VDS, 30 A ID, single N-channel; requires dual discrete placement and gate driver isolation. Targeted at UPS and PFC stages; exhibits slower tr/tf (15/10 ns) and higher Qg (71 nC). Acceptable for cost-sensitive non-audio half-bridges; unsuitable for THD-critical audio due to 120 ns trr and unoptimized body diode.

Compared with STW56N60M2 and IXFH30N60P, IRFI4019HG-117P uniquely integrates matched half-bridge switches with Class-D–specific parameters (low Qrr, split gate charge, isolated sources), eliminating layout-dependent timing skew and reducing component count by 50% in audio output stages.

Availability

IRFI4019HG-117P is available at Aetrix Electronics and suitable for home audio amplifiers, automotive infotainment systems, and professional sound equipment requiring stable component supply and long-term production continuity.

Supply support for IRFI4019HG-117P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching applications including Class-D audio, where low conduction/switching losses and controlled diode recovery are critical.

FAQ

What is the maximum recommended gate drive voltage for IRFI4019HG-117P?

The absolute maximum VGS rating is ±20 V, but the device is characterized and optimized for 10 V gate drive. Operating above 12 V yields diminishing RDS(on) improvement while increasing gate oxide stress and Qg-related losses. For reliability and thermal margin, 10 V is the recommended nominal drive level.

Can IRFI4019HG-117P be used in synchronous rectification topologies?

No - it is not designed for synchronous rectification. Its body diode is optimized for Class-D freewheeling (low Qrr, fast trr), but lacks the low forward voltage and bidirectional current capability required for SR control. Dedicated SR controllers paired with logic-level MOSFETs are required instead.

How does the TO-220 Full-Pak 5-pin package differ from standard TO-220AB?

The Full-Pak variant features an insulated plastic body over the metal tab, allowing the drain (D1) to remain electrically isolated from the heatsink. Standard TO-220AB exposes the drain on the tab, requiring insulating hardware. This eliminates mounting isolation components and improves thermal reliability in high-density layouts.

Is IRFI4019HG-117P qualified for automotive applications?

No - the datasheet explicitly states qualification for the Consumer market only. It does not meet AEC-Q101 stress test requirements for temperature cycling, humidity, or mechanical shock. Automotive designs require parts such as Infineon's AUIRF7601 or similar AEC-Q101–qualified half-bridge modules.

IRFI4019HG-117P Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-220-5 Full Pack, Formed Leads
Packaging:
Tube
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
150V
Current - Continuous Drain (Id) @ 25°C:
8.7A
Rds On (Max) @ Id, Vgs:
95mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id:
4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
810pF @ 25V
Power - Max:
18W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-5 Full-Pak

IRFI4019HG-117P FAQ

1.How can I place an order for IRFI4019HG-117P through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI4019HG-117P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI4019HG-117P reliable?

The price and inventory of IRFI4019HG-117P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI4019HG-117P is usually 5 days.

3.What payment methods are accepted for IRFI4019HG-117P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI4019HG-117P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI4019HG-117P?

IRFI4019HG-117P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI4019HG-117P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI4019HG-117P?

For technical support, including IRFI4019HG-117P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI4019HG-117P requirements.

6.How does Aetrix verify that IRFI4019HG-117P is sourced from the original manufacturer or authorized distributors?

All IRFI4019HG-117P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI4019HG-117P meets industry standards.

7.What is the process for return or replacement of IRFI4019HG-117P?

All IRFI4019HG-117P units undergo pre-shipment inspection (PSI). If there is an issue with IRFI4019HG-117P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI4019HG-117P part is unused and in its original packaging.

Return procedure for IRFI4019HG-117P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFI4019HG-117P Tags

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