Infineon Technologies IRFI4019HG-117P
- Part No.:
- IRFI4019HG-117P
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- TO-220-5 Full Pack, Formed Leads
- Datasheet:
-
IRFI4019HG-117P.pdf
- Description:
- MOSFET 2N-CH 150V 8.7A TO220-5
- Quantity:
- Payment:

- Shipping:

Inventory:5,655
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Product details
Overview
IRFI4019HG-117P from Infineon Technologies is a discrete power MOSFET half-bridge module in TO-220 Full-Pak 5-pin package, integrating high-side and low-side N-channel switches for Class-D audio amplifiers. It delivers up to 200W per channel into 8Ω load, features 80 mΩ RDS(on) @ 10V, 13 nC total gate charge, and optimized body-diode Qrr (140–210 nC) to reduce THD and EMI.
For engineers reviewing the IRFI4019HG-117P datasheet, IRFI4019HG-117P pinout, IRFI4019HG-117P application, or IRFI4019HG-117P equivalent, key selection criteria include half-bridge integration, low Qsw (4.1 nC), internal gate resistance (2.5 Ω), thermal resistance RθJC = 6.9 °C/W, and Class-D–specific diode recovery performance.
Technical Context
This device implements a monolithic half-bridge topology with isolated source terminals (S1, S2) and separate gate inputs (G1, G2), enabling independent control of high-side and low-side switches. Its 150 V VDS rating and 150 °C TJ(max) support robust operation in high-power audio output stages.
The integrated design minimizes parasitic inductance (LD = 4.5 nH, LS = 7.5 nH) and leverages optimized gate charge partitioning (Qgs1 = 3.3 nC, Qgd = 3.9 nC) to ensure fast, low-loss switching at typical Class-D frequencies (250–500 kHz).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Supports rail voltages up to ±75 V in bridged-tied-load (BTL) Class-D amplifiers. |
| RDS(on) typ. @ 10 V | 80 mΩ - Enables <2 W conduction loss per FET at 5.2 A continuous drain current. |
| Qg typ. | 13 nC - Reduces gate drive power requirement and supports efficient 500 kHz switching. |
| Qrr typ. | 140 nC - Low reverse recovery charge suppresses shoot-through risk and EMI during dead-time transitions. |
| RθJC | 6.9 °C/W - Allows direct heatsink mounting with ≤10.4 W dissipation at ΔT = 72 °C (150 °C TJ − 78 °C TC). |
| ID @ TC = 25°C | 150 A - Peak pulsed capability supports transient 200 W/channel output without thermal runaway. |
| VGS(th) | 3.0–4.9 V - Ensures reliable turn-on with standard 5 V or 10 V gate drivers while avoiding false triggering. |
Pinout & Package
IRFI4019HG-117P uses a TO-220 Full-Pak 5-pin package with isolated source leads and dedicated gate/drain connections for half-bridge operation. The metal tab is electrically connected to the high-side drain (D1) and serves as the primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | High-side gate input | Controls upper switch; referenced to S1 (high-side source), requires level-shifted drive. |
| G2 | Low-side gate input | Controls lower switch; referenced to S2 (low-side source), ground-referenced drive compatible. |
| D1 | High-side drain / output node | Connected to metal tab; carries full load current and serves as main heat transfer surface. |
| S1 | High-side source / bootstrap return | Isolated terminal for high-side source biasing; enables floating gate drive in half-bridge. |
| S2 | Low-side source / power ground | Common reference for low-side switch and system ground; separates high/low-side return paths. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated half-bridge topology | Reduces PCB footprint by eliminating discrete layout matching and interconnect inductance between two MOSFETs. |
| Optimized body-diode Qrr and trr | 140–210 nC Qrr, 57–86 ns trr minimize voltage spikes and cross-conduction during dead-time commutation. |
| Low internal gate resistance (RG(int)) | 2.5 Ω limits gate oscillation and dV/dt-induced false turn-on without external damping resistors. |
| Halogen-free, lead-free package | TO-220 Full-Pak meets RoHS 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1). |
| Enhanced thermal interface | Direct metal tab contact provides 6.9 °C/W junction-to-case thermal resistance for stable 150 °C operation. |
Applications
| Home Audio Amplifiers | Automotive Infotainment Systems |
|---|---|
|
Use Scenario: High-efficiency stereo amplifier delivering 2×200W into 8Ω loads in compact AV receivers. IC Role / Device Role / Timing Role: Half-bridge power stage driving speaker outputs in BTL configuration with PWM carrier frequency ≥350 kHz. Use Value: 80 mΩ RDS(on) and 4.1 nC Qsw enable >90% efficiency at full power, reducing heatsink size by 35% vs. discrete alternatives. |
Use Scenario: 4-channel Class-D amplifier powering front/rear speakers and subwoofer in premium vehicle audio systems. IC Role / Device Role / Timing Role: Dual half-bridge per channel (two IRFI4019HG-117P per channel) supporting 400 kHz switching with adaptive dead-time control. Use Value: Low Qrr (140 nC) ensures clean zero-crossing transitions under high di/dt (100 A/µs), suppressing audible switching artifacts. |
| Professional Sound Equipment | Active Studio Monitors |
|
Use Scenario: 1U rack-mount powered mixer with 8-output Class-D amplifier bank for live sound reinforcement. IC Role / Device Role / Timing Role: Primary output stage handling 150 A peak pulsed current per channel with forced-air cooling. Use Value: 150 A IDM rating and 34 A pulsed source current (body diode) sustain transient peaks without derating or thermal throttling. |
Use Scenario: Bi-amplified near-field monitor with separate Class-D channels for woofer and tweeter. IC Role / Device Role / Timing Role: Low-noise half-bridge stage operating at 500 kHz to avoid audible beat frequencies with audio band content. Use Value: 15 pF Crss and 97 pF Cosseff minimize capacitive coupling into feedback paths, preserving >110 dB SNR. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW56N60M2 | 600 V VDS, 56 mΩ RDS(on), no integrated half-bridge - requires external pairing and layout matching. | Designed for SMPS and motor drives; lacks Class-D–optimized Qrr and gate charge partitioning. | Preferred for higher-voltage industrial inverters; not drop-in for audio due to missing S1/S2 isolation and higher Qrr (320 nC). |
| IXFH30N60P | 600 V VDS, 30 A ID, single N-channel; requires dual discrete placement and gate driver isolation. | Targeted at UPS and PFC stages; exhibits slower tr/tf (15/10 ns) and higher Qg (71 nC). | Acceptable for cost-sensitive non-audio half-bridges; unsuitable for THD-critical audio due to 120 ns trr and unoptimized body diode. |
Compared with STW56N60M2 and IXFH30N60P, IRFI4019HG-117P uniquely integrates matched half-bridge switches with Class-D–specific parameters (low Qrr, split gate charge, isolated sources), eliminating layout-dependent timing skew and reducing component count by 50% in audio output stages.
Availability
IRFI4019HG-117P is available at Aetrix Electronics and suitable for home audio amplifiers, automotive infotainment systems, and professional sound equipment requiring stable component supply and long-term production continuity.
Supply support for IRFI4019HG-117P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.
This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching applications including Class-D audio, where low conduction/switching losses and controlled diode recovery are critical.
FAQ
What is the maximum recommended gate drive voltage for IRFI4019HG-117P?
The absolute maximum VGS rating is ±20 V, but the device is characterized and optimized for 10 V gate drive. Operating above 12 V yields diminishing RDS(on) improvement while increasing gate oxide stress and Qg-related losses. For reliability and thermal margin, 10 V is the recommended nominal drive level.
Can IRFI4019HG-117P be used in synchronous rectification topologies?
No - it is not designed for synchronous rectification. Its body diode is optimized for Class-D freewheeling (low Qrr, fast trr), but lacks the low forward voltage and bidirectional current capability required for SR control. Dedicated SR controllers paired with logic-level MOSFETs are required instead.
How does the TO-220 Full-Pak 5-pin package differ from standard TO-220AB?
The Full-Pak variant features an insulated plastic body over the metal tab, allowing the drain (D1) to remain electrically isolated from the heatsink. Standard TO-220AB exposes the drain on the tab, requiring insulating hardware. This eliminates mounting isolation components and improves thermal reliability in high-density layouts.
Is IRFI4019HG-117P qualified for automotive applications?
No - the datasheet explicitly states qualification for the Consumer market only. It does not meet AEC-Q101 stress test requirements for temperature cycling, humidity, or mechanical shock. Automotive designs require parts such as Infineon's AUIRF7601 or similar AEC-Q101–qualified half-bridge modules.
IRFI4019HG-117P Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-220-5 Full Pack, Formed Leads
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 150V
- Current - Continuous Drain (Id) @ 25°C:
- 8.7A
- Rds On (Max) @ Id, Vgs:
- 95mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id:
- 4.9V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 810pF @ 25V
- Power - Max:
- 18W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-5 Full-Pak
IRFI4019HG-117P FAQ
1.How can I place an order for IRFI4019HG-117P through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFI4019HG-117P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFI4019HG-117P reliable?
The price and inventory of IRFI4019HG-117P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI4019HG-117P is usually 5 days.
3.What payment methods are accepted for IRFI4019HG-117P?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI4019HG-117P transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFI4019HG-117P?
IRFI4019HG-117P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFI4019HG-117P order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFI4019HG-117P?
For technical support, including IRFI4019HG-117P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI4019HG-117P requirements.
6.How does Aetrix verify that IRFI4019HG-117P is sourced from the original manufacturer or authorized distributors?
All IRFI4019HG-117P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI4019HG-117P meets industry standards.
7.What is the process for return or replacement of IRFI4019HG-117P?
All IRFI4019HG-117P units undergo pre-shipment inspection (PSI). If there is an issue with IRFI4019HG-117P, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFI4019HG-117P part is unused and in its original packaging.
Return procedure for IRFI4019HG-117P:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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