Infineon Technologies IRFI4020H-117P

Overview

IRFI4020H-117P from Infineon Technologies is an integrated half-bridge power MOSFET module designed specifically for Class-D audio amplifiers. It contains two 200 V, 80 mΩ (typ.) N-channel MOSFETs in a single TO-220 Full-Pak 5-pin package, with optimized Qg (19 nC), Qsw (6.8 nC), and Qrr (230–350 nC) to minimize THD and EMI while delivering up to 300 W per channel into 8 Ω in half-bridge configuration.

For engineers reviewing the IRFI4020H-117P datasheet, IRFI4020H-117P pinout, IRFI4020H-117P application, or IRFI4020H-117P equivalent, key selection criteria include low R_DS(on), fast switching with controlled Q_rr, internal gate resistance (3.0 Ω), thermal performance (R_θJC = 5.9 °C/W), and half-bridge integration for compact Class-D amplifier PCB layout.

Technical Context

This device implements a monolithic half-bridge topology with separate source, drain, and gate terminals for each MOSFET-G1/D1/S1 and G2/D2/S2-enabling independent gate drive and precise dead-time control. Its internal gate resistance (3.0 Ω typ.) damps oscillation and reduces EMI without external gate resistors, while low Q_rr (230–350 nC) and fast trr (76–110 ns) suppress body-diode reverse recovery artifacts critical in high-frequency Class-D switching.

The silicon uses Infineon's latest process to achieve high current density and low R_DS(on) per die area, with thermal design anchored by a low junction-to-case resistance (5.9 °C/W) and maximum junction temperature of 150 °C-supporting sustained 300 W/channel operation under forced-air cooling at T_C = 100 °C.

Key Specifications

Pinout & Package

IRFI4020H-117P is housed in a TO-220 Full-Pak 5-pin package with isolated tab (electrically connected to S1), enabling direct heatsink mounting without insulation hardware. The package integrates both high-side and low-side MOSFETs with dedicated gate, drain, and source terminals for independent control.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge MOSFET applications.

Compared with STW48N60M2 and IXFH30N60P, IRFI4020H-117P delivers system-level advantages in Class-D audio: integrated half-bridge reduces layout sensitivity, internal R_G eliminates gate resistor tuning, and Q_rr/trr specs are uniquely validated for low-THD audio switching-not just power conversion.

Availability

IRFI4020H-117P is available at Aetrix Electronics and suitable for home audio amplifiers, professional PA systems, and automotive infotainment requiring stable component supply and consistent parametric performance across production batches.

Supply support for IRFI4020H-117P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRFI4020H-117P belongs to Infineon's "IR" legacy power MOSFET product line, engineered specifically for high-efficiency, low-EMI Class-D audio amplifier stages-prioritizing switching fidelity, thermal robustness, and half-bridge integration over general-purpose switching.

FAQ

What is the electrical isolation rating between the TO-220 Full-Pak tab and internal circuitry?

The TO-220 Full-Pak tab is electrically connected to S1 (high-side source) and is isolated from all other pins. According to Infineon's package documentation, the creepage and clearance meet ≥2.5 mm, supporting 200 V working voltage with reinforced insulation. No additional insulating washer is required when mounting to grounded heatsinks.

Can IRFI4020H-117P be used in synchronous rectification topologies?

No-it is not designed for synchronous rectification. Its body diode parameters (V_SD = 1.3 V, Q_rr = 230–350 nC) are optimized for Class-D commutation, not low-loss rectification. For SR applications, Infineon's OptiMOS™ or StrongIRFET™ families offer lower V_F and Q_rr with dedicated SR logic.

Is the internal gate resistance (R_G(int)) present on both high-side and low-side MOSFETs?

Yes-both MOSFETs integrate 3.0 Ω (typ.) gate resistance in series with their respective gate terminals (G1 and G2). This is confirmed in the Electrical Characteristics table and Fig. 15 gate charge test waveforms, where Q_gd and Q_godr measurements account for internal R_G effects on charge distribution.

Does IRFI4020H-117P support paralleling for higher current capability?

Parallel operation is not recommended. The device lacks matched R_DS(on) binning or thermal coupling between dies, and its gate charge asymmetry (Q_gs1 = 4.9 nC, Q_gs2 = 0.95 nC) causes unequal turn-on dynamics. For >300 W/channel, use dual IRFI4020H-117P modules with individual gate drivers and current-sharing resistors.