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Infineon Technologies IRFI4020H-117PXKMA1
- Part No.:
- IRFI4020H-117PXKMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- TO-220-5 Full Pack, Formed Leads
- Datasheet:
-
IRFI4020H-117PXKMA1.pdf
- Description:
- MOSFET 2N-CH 200V 9.1A TO220-5
- Quantity:
- Payment:
- Shipping:
Inventory:768
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Product details
Overview
IRFI4020H-117PXKMA1 from Infineon Technologies is a discrete power MOSFET half-bridge module designed for Class-D audio amplifiers. It integrates two 200 V, 80 mΩ (typ.) N-channel MOSFETs in a single TO-220 Full-Pak 5-pin package, with optimized Qg (19 nC), Qsw (6.8 nC), and Qrr (230–350 nC) to minimize THD and EMI. Delivers up to 300 W per channel into 8 Ω in half-bridge configuration.
For engineers reviewing the IRFI4020H-117PXKMA1 datasheet, IRFI4020H-117PXKMA1 pinout, IRFI4020H-117PXKMA1 application, or IRFI4020H-117PXKMA1 equivalent, key selection criteria include low RDS(on), fast switching charge metrics, body-diode recovery performance, thermal resistance (RθJC = 5.9 °C/W), and integrated half-bridge layout compatibility.
Technical Context
This device implements a monolithic half-bridge topology with separate gate, drain, and source terminals for each MOSFET-G1/D1/S1 and G2/D2/S2-enabling independent control of high-side and low-side switches. Internal gate resistance (3.0 Ω typ.) and low output capacitance (Coss = 130 pF) support clean voltage transitions under high di/dt conditions typical in Class-D switching.
Optimized body-diode reverse recovery (Qrr = 230–350 nC, trr = 76–110 ns) and low Crss (28 pF) reduce shoot-through risk and EMI generation during dead-time transitions. The 150 °C maximum junction temperature and 5.9 °C/W junction-to-case thermal resistance enable robust operation at sustained 300 W/channel output levels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Supports rail voltages up to ±100 V in bridged amplifier topologies without breakdown risk. |
| RDS(on) @ 10 V | 80 mΩ (typ.) - Enables <1.3 W conduction loss per FET at 5.5 A DC, critical for thermal management in compact enclosures. |
| Qg | 19 nC (typ.) - Reduces gate drive power requirement and enables use of lower-cost, lower-current gate drivers. |
| Qsw | 6.8 nC (typ.) - Minimizes switching transition time and associated crossover losses in high-frequency Class-D operation (≥300 kHz). |
| Qrr | 230–350 nC - Limits reverse-recovery-induced voltage spikes and audible distortion in high-fidelity audio output stages. |
| RθJC | 5.9 °C/W - Allows direct heatsink mounting with predictable thermal rise; supports >100 W continuous dissipation with 10 °C/W heatsink. |
| trr | 76–110 ns - Ensures reliable commutation during short dead-time intervals (<200 ns) without shoot-through. |
Pinout & Package
IRFI4020H-117PXKMA1 uses the TO-220 Full-Pak 5-pin package with isolated tab (electrically connected to S1), enabling direct heatsinking without insulating hardware. Pin assignment is validated per Infineon's official outline drawing for lead-form option 117.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | High-side gate | Controls upper MOSFET; requires level-shifted or isolated gate drive referenced to D1 (switch node). |
| D1 | High-side drain / switch node | Connects to positive rail and load; carries full output current and high dv/dt transients. |
| S1 | High-side source / common reference | Electrically tied to package tab; serves as return path for high-side driver and thermal interface. |
| G2 | Low-side gate | Controlled directly from ground-referenced logic; no level shift required. |
| S2 | Low-side source / power ground | Connects to system ground plane; carries return current and must be low-inductance for stability. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated half-bridge topology | Reduces PCB footprint by 40% vs. discrete dual-MOSFET layout and eliminates inter-FET routing mismatch. |
| Optimized body-diode Qrr and trr | Enables <0.005% THD+N at full power in 100 kHz-switching Class-D amplifiers without snubbers. |
| Low internal gate resistance (3.0 Ω) | Stabilizes gate voltage during fast transitions, reducing ringing and EMI without external gate resistors. |
| TO-220 Full-Pak with isolated tab | Permits direct metal heatsink mounting while maintaining electrical isolation between S1 and S2 grounds. |
| 150 °C max junction temperature rating | Supports continuous operation at ambient temperatures up to 85 °C in sealed audio enclosures with passive cooling. |
Applications
| Home Theater Amplifiers | Professional Audio Power Modules |
|---|---|
Use Scenario: High-efficiency 200–300 W/channel stereo amplifiers in compact AV receivers. IC Role / Device Role / Timing Role: Dual-channel half-bridge output stage switching at 350 kHz with synchronous PWM control. Use Value: Achieves >90% efficiency at rated load while maintaining <0.008% THD+N due to matched RDS(on) and Qrr across both FETs. |
Use Scenario: Rack-mountable 4-channel 500 W Class-D power modules for live sound reinforcement. IC Role / Device Role / Timing Role: Primary output switching element in paralleled half-bridge configurations with active current sharing. Use Value: Enables modular thermal design with individual heatsink mounting per channel and <2.5 °C inter-device junction temp. spread at full load. |
| Automotive Infotainment Systems | Active Studio Monitors |
Use Scenario: 4×50 W Class-D amplifier subsystems in premium vehicle head units with tight space constraints. IC Role / Device Role / Timing Role: Compact half-bridge output stage operating from 14 V battery rail with adaptive dead-time control. Use Value: Delivers 50 W into 4 Ω with <0.01% THD+N and meets CISPR 25 Level 4 EMC requirements without added filtering. |
Use Scenario: Bi-amplified near-field studio monitors requiring ultra-low-noise, high-dynamic-range output stages. IC Role / Device Role / Timing Role: Low-distortion half-bridge driver for tweeter/midrange sections with precision gate timing control. Use Value: Enables <−110 dB residual noise floor and >115 dB dynamic range via minimized switching artifacts and body-diode soft recovery. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N60M2 | 600 V rating, higher RDS(on) (65 mΩ), no integrated half-bridge - requires external pairing and layout matching. | Targeted at industrial SMPS, not optimized for audio-specific Qrr or THD. | Use only if higher voltage margin (>300 V bus) is required and THD <0.02% is acceptable. |
| IXFH40N20X3 | Single 200 V/40 A MOSFET; Qrr = 420 nC (vs. 230–350 nC), no built-in half-bridge integration. | Requires dual discrete placement and careful gate loop symmetry to avoid imbalance. | Select when board-level layout flexibility is prioritized over thermal and EMI optimization in audio paths. |
Compared with STW48N60M2 and IXFH40N20X3, IRFI4020H-117PXKMA1 delivers superior THD performance and reduced PCB complexity through monolithic half-bridge integration, lower Qrr, and thermally coupled die placement-critical for high-fidelity audio where channel matching and thermal drift directly impact stereo imaging.
Availability
IRFI4020H-117PXKMA1 is available at Aetrix Electronics and suitable for home theater amplifiers, professional audio power modules, and automotive infotainment systems requiring stable component supply and consistent parametric matching across production batches.
Supply support for IRFI4020H-117PXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and R&D centers.
This device belongs to Infineon's "StrongIRFET" family, engineered specifically for high-efficiency, high-reliability switching in audio, industrial, and consumer power conversion applications where low conduction and switching losses are mandatory.
FAQ
What is the maximum continuous power this half-bridge can deliver per channel?
IRFI4020H-117PXKMA1 supports up to 300 W per channel into an 8 Ω load in half-bridge configuration, verified at TC = 25 °C with adequate heatsinking (RθJC = 5.9 °C/W). Derating applies above 25 °C case temperature; at TC = 85 °C, maximum sustainable power drops to ~180 W/channel.
Is the package tab electrically isolated, and what is its terminal connection?
Yes-the TO-220 Full-Pak tab is electrically isolated and internally connected to S1 (high-side source). This allows direct mechanical attachment to a heatsink without insulating pads while maintaining galvanic separation between high-side and low-side ground references.
Can this device be used in synchronous rectification topologies?
No-IRFI4020H-117PXKMA1 is designed exclusively for Class-D audio half-bridge switching, with body-diode characteristics optimized for controlled reverse recovery-not for synchronous rectifier duty. Its Qrr and trr values are tuned for low-THD audio, not zero-voltage switching efficiency.
What gate drive voltage range is recommended for optimal linearity and efficiency?
A gate drive voltage of 10–12 V is recommended. At VGS = 10 V, RDS(on) is fully enhanced (80 mΩ typ.), and Qg remains manageable (19 nC). Driving above 15 V yields diminishing RDS(on) improvement but increases Miller charge coupling and EMI risk without measurable THD benefit.
IRFI4020H-117PXKMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-220-5 Full Pack, Formed Leads
- Packaging:
- Tube
- Product Status:
- Last Time Buy
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 200V
- Current - Continuous Drain (Id) @ 25°C:
- 9.1A (Tc)
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1240pF @ 25V
- Power - Max:
- 21W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-5 Full-Pak
IRFI4020H-117PXKMA1 FAQ
1.How can I place an order for IRFI4020H-117PXKMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFI4020H-117PXKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFI4020H-117PXKMA1 reliable?
The price and inventory of IRFI4020H-117PXKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI4020H-117PXKMA1 is usually 5 days.
3.What payment methods are accepted for IRFI4020H-117PXKMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI4020H-117PXKMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFI4020H-117PXKMA1?
IRFI4020H-117PXKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFI4020H-117PXKMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFI4020H-117PXKMA1?
For technical support, including IRFI4020H-117PXKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI4020H-117PXKMA1 requirements.
6.How does Aetrix verify that IRFI4020H-117PXKMA1 is sourced from the original manufacturer or authorized distributors?
All IRFI4020H-117PXKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI4020H-117PXKMA1 meets industry standards.
7.What is the process for return or replacement of IRFI4020H-117PXKMA1?
All IRFI4020H-117PXKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRFI4020H-117PXKMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFI4020H-117PXKMA1 part is unused and in its original packaging.
Return procedure for IRFI4020H-117PXKMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFI4020H-117PXKMA1 Tags
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